A5054210676- 2D Materials and Applications
- Graphene research and applications
- Topological Materials and Phenomena
- Quantum and electron transport phenomena
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Advanced Memory and Neural Computing
- Magnetic properties of thin films
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Diamond and Carbon-based Materials Research
- Surface and Thin Film Phenomena
- Thermal properties of materials
- Advanced Sensor and Energy Harvesting Materials
- Advanced Nanomaterials in Catalysis
- Advanced Photocatalysis Techniques
- Physics of Superconductivity and Magnetism
- Ferroelectric and Negative Capacitance Devices
- TiO2 Photocatalysis and Solar Cells
- Electron Spin Resonance Studies
- Theoretical and Computational Physics
- Molecular Junctions and Nanostructures
- Photonic and Optical Devices
- Graphene and Nanomaterials Applications
- Organic and Molecular Conductors Research
Chungnam National University
2023-2024
Sungkyunkwan University
2018-2024
The finite energy band-offset that appears between band structures of employed materials in a broken-gap heterojunction exhibits several interesting phenomena. Here, by employing black phosphorus (BP)/rhenium disulfide (ReS2 ) heterojunction, the tunability BP work function (Φ with variation flake thickness is exploited order to demonstrate BP-based can manifest diverse current-transport characteristics such as gate tunable rectifying p-n junction diodes, Esaki backward-rectifying and...
The broken-gap (type III) van der Waals heterojunction is of particular interest, as there no overlap between energy bands its two stacked materials. Despite several studies on straddling-gap I) and staggered-gap II) vdW heterojunctions, comprehensive understanding current transport optoelectronic effects in a type-III remains elusive. Here, we report gate-tunable rectifying characteristics black phosphorus (BP)/rhenium disulfide (ReS2) p-n diode. Current this was modeled using the Simmons...
Abstract Surface charge transfer doping (SCTD) using oxygen plasma to form a p‐type dopant oxide layer on transition metal dichalcogenide (TMDs) is promising technique for 2D TMDs field‐effect transistors (FETs). However, patternability of SCTD key challenge effectively switch FETs. Herein, simple method selectively pattern degenerately (p + )‐doped WSe 2 FETs via electron beam (e‐beam) irradiation reported. The effect the selective e‐beam confirmed by gate‐tunable optical responses seamless...
Recently, multivalued logic (MVL) circuits have attracted tremendous interest due to their ability process more data by increasing the number of states rather than integration density. Here, we fabricate based on molybdenum telluride (MoTe2)/black phosphorus (BP) van der Waals heterojunctions with different structural phases MoTe2. Owing electrical properties 2H and mixed +1T′ MoTe2, tunable devices been realized. A circuit a BP field-effect transistor (FET) BP/MoTe2 (2H + 1T′)...
Abstract Two‐dimensional (2D) black phosphorus (BP) has attracted increasing interest for next‐generation solid‐state device applications due to its unique blend of versatile properties. The ultrathin physique and low thermal conductivity (40–20 Wm −1 K ) BP make it susceptible premature Joule breakdown under moderate electric field induced by inefficient nonhomogeneous energy dissipation. Here, is reported that the back‐gate suffers merely 4 MV m value with centrally localized fracture....
Growing demand for sustainable wastewater treatment drives interest in advanced photocatalytic materials. Immobilized photocatalysts hold potential addressing industrial organic pollutants, offering substantial surface area, agglomeration prevention, and easy removal. In this study, we successfully immobilized ZnO carbon nanotubes onto a textile substrate through bilateral esterification explored their effectiveness as potent photocatalyst degrading of commercial colorant reactive blue 4...
The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit phenomena and applications. An important question in magnetism is ultimate antiferromagnetic layer thickness ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures observe exchange bias (EB) effect, which origin has been subject long-standing debate. Here, we report that EB effect maintained down atomic bilayer AFM FM (Fe3GeTe2)/AFM (CrPS4)...
The interplay between strong Coulomb interactions and kinetic energy leads to intricate many-body competing ground states owing quantum fluctuations in 2D electron hole gases. However, the simultaneous observation of critical phenomena both regimes remains elusive. Here, we utilize anisotropic black phosphorus (BP) show density-driven metal-insulator transition with a conductance ∼e2/h which highlights significant role regimes. We observe T-linear resistivity from deep metallic phase...
Abstract Recently, researchers have been investigating artificial ferroelectricity, which arises when inversion symmetry is broken in certain R‐stacked, i.e., zero‐degree twisted, van der Waals (vdW) bilayers. Here, the study reports twist‐controlled ferroelectricity tungsten diselenide (WSe 2 ) The findings show noticeable room temperature that decreases with twist angle within range 0° < θ 3°, and disappears completely for ≥ 4°. This variation aligns moiré length scale‐controlled...
Temperature-dependent electrical and magneto-transport measurements have been performed on devices composed of few layer (4L) graphene grown directly SiO2/Si substrates using the CVD method. An intrinsic energy band-gap 4.6 meV in 4L is observed, which primarily dictates current transport at T <50 K. Unusual temperature dependent electron-hole conduction asymmetry observed >50 K, can be explained framework defect scattering relativistic charge carriers. Magneto-transport reveal a weak...
Abstract The pursuit of near‐ideal subthreshold swing ( SS ) ≈ 60 mV dec −1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge particularly pronounced in 2D material‐based FETs, where presence large interface trap density D it imposes limitations on electrostatic control, consequently escalating power consumption. In this study, gate controllability FETs systematically analyzed by fabricating pre‐patterned van der Waals (vdW)‐contacted...
As Coulomb drag near charge neutrality (CN) is driven by fluctuations or inhomogeneity in density, the topology should play an extremely important role. Interlinking and could reveal how system's nontrivial influences electron–electron interactions at quantum level. However, such aspect overlooked as most studies focus on symmetric systems without topology. To understand this topological aspect, we need to study asymmetric system with a broken inversion symmetry strong spin–orbit coupling...
Dzyaloshinskii-Moriya interaction (DMI) is shown to induce a topologically protected chiral spin texture in magnetic/nonmagnetic heterostructures. In the context of van der Waals spintronic devices, graphene emerges as an excellent candidate material. However, due its negligible spin-orbit interaction, inducing DMI stabilize topological spins when coupled 3d-ferromagnets remains challenging. Here, it demonstrated that, despite these challenges, sizeable Rashba-type splitting followed by...
This study investigated the variations in structural and electrical characteristics of graphene under different O 2 plasma treatment conditions durations, employing Raman spectroscopy I d -V g measurements.Initially, we examined spectra curves following remote treatments ranging from 1 to 4 s.We observed -doping effects on properties graphene.Subsequently, transitioned a reactive ion etching mode, followed by comparative analysis determine most suitable mode for enhancing without...