A5100775144- Semiconductor materials and devices
- Plasma Diagnostics and Applications
- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- Magnetic confinement fusion research
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Carbon Nanotubes in Composites
- Ferroelectric and Negative Capacitance Devices
- Particle accelerators and beam dynamics
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Photonic Crystals and Applications
- Ionosphere and magnetosphere dynamics
- Copper-based nanomaterials and applications
- Graphene research and applications
- Ga2O3 and related materials
- Plasmonic and Surface Plasmon Research
- Electronic and Structural Properties of Oxides
- Laser-induced spectroscopy and plasma
- TiO2 Photocatalysis and Solar Cells
- Copper Interconnects and Reliability
- Electrohydrodynamics and Fluid Dynamics
- Metamaterials and Metasurfaces Applications
Harbin Institute of Technology
2020-2024
Soochow University
2011-2020
Xi'an Jiaotong University
2018
Peking University
2007
Abstract A metal‐semiconductor‐metal (M‐S‐M) model for quantitative analysis of current–voltage ( I–V ) characteristics semiconducting nanowires is described and applied to fit experimental curves Bi 2 S 3 nanowire transistors. The are found depend sensitively on the contacts, in particular Schottky barrier height contact area, M‐S‐M shown be able reproduce all experimentally observed using only few fitting variables. procedure decoupling effects from that intrinsic parameters nanowires,...
In this paper, the effect of plasma density on photonic bandgap 1-D crystals (PPCs) has been investigated numerically based finite-element method. region where frequency is below cutoff frequency, transverse electric (TE) mode bandgaps exist due to surface modes, such as in metallic crystals; above positive permittivity for TE mode, conventional crystals, are a consequence periodic distribution dielectric constant and background medium. The all-PPCs strongly dependent density, that forms at...
Cr-doped SiC thin films have been fabricated on Al2O3 and Si substrates by using dual ion beam sputtering deposition at room temperature. The characterized x-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy photoelectron (XPS). XRD TEM results show that the are amorphous. XPS studies confirm Cr3+ occupies site in amorphous (a-SiC). temperature dependence of resistivity measurements reveals Cr doping does not change semiconducting property...
A one-dimensional plasma photonic crystal, which consists of periodically alternating layers quartz discharge tubes and air, is proved to have a special bandgap. It found that in the absence plasma, tube array can give rise bandgap within fixed frequency band. Interestingly, both effective medium theory experimental results reveal such be closed existence with an appropriate density reopened as increase density. The unique behavior also depends on collision plasma. To describe these...
The effect of NH3 plasma treatment on the interfacial property between ultrathin HfO2 and strained Si0.65Ge0.35 substrate has been investigated by high-resolution cross-sectional transmission electron micrographs, x-ray photoelectron spectroscopy, VBS, capacitance-voltage (C-V), current density-voltage (J-V). TEM XPS results confirm that layer with N–Hf N–Si/O-N-Si bonds acts as a barrier against interdiffusions during annealing in some degree. valence-band offsets ΔEV HfO2/SiGe interfaces...
In this paper, N-doped diamond-like carbon (DLC) films were deposited on silicon substrates by using helicon wave plasma chemical vapor deposition (HWP-CVD) with the Ar/CH4/N2 mixed gas. The surface morphology, structural and mechanical properties of DLC investigated in detail scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), Raman spectra, atomic force (AFM). It can be observed from SEM images that morphology become compact uniform due to incorporation N. maximum...
The high magnetic field helicon experiment system is a wave plasma (HWP) source device in axial (B0) developed for plasma–wall interactions studies fusion reactors. This HWP was realized at low pressure (5 × 10−3 − 10 Pa) and RF (radio frequency, 13.56 MHz) power (maximum of 2 kW) using an internal right helical antenna cm diameter by 18 long) with maximum B0 6300 G. Ar electron density ∼1018–1020 m−3 temperature ∼4–7 eV produced 5100 G, 1500 W. Maximum Ar+ ion flux 7.8 1023 m−2 s−1 bright...
A helicon wave plasma (HWP) discharge in an experimental advanced superconducting tokamak device with a toroidal magnetic field of 2 T is investigated. The HWP electron density <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$10^{12}\ \hbox{cm}^{-3}$</tex></formula> was produced two 4-turn flat spiral antennas series that are perpendicular to the and driven by 13.56-MHz radio-frequency (RF) source at...
The transmission characteristics of a 1-D plasma photonic crystal (PPC) at frequency band lower than are studied. We show, through the simulation, that complex behaviors transverse electric (TE) mode-negative bandgaps in PPCs strongly related to whether surface lattice resonance (SLR) occurs or not, which localized plasmon and Bragg play an important role. In addition, approximate method, whose predicted results verified by is used describe generation process SLR. These works provide new...
C 4 F 8 ‐based, inductively coupled plasma (ICP) combined with dual‐frequency capacitively (CCP) was used to etch 6H–SiC substrates for the synthesis of few‐layer graphene‐on‐insulator (FLGOI) films. The Raman spectroscopy studies were measure thickness FLG samples. combination high frequency CCP and ICP modes can facilitate tuning discharge dissociation characteristics. A balance is struck between etching deposition, leaving an ultra‐thin C‐rich overlaying film on surface. After layer...
Helium helicon wave plasma (He-HWP) wall conditioning was performed with a specially designed antenna system on the Experimental Advanced Superconducting Tokamak (EAST) under strong magnetic field (0.5–1 T). The maximum effective RF power <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\mathrm {eff}}$ </tex-math></inline-formula> 30 kW at 27 MHz, and He pressure fixed ~0.27 Pa. Charge-coupled device...
A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology the were characterized Raman spectroscopy scanning electron microscopy. diagnosis excited a measured optical emission Langmuir probe. mechanism for DLC HWP-CVD has been discussed. reaches maximum value 54 μm h−1 CH4 flow 85 sccm, which is attributed to higher density during...
Silicon carbide (SiC) films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mtext>Ar</mml:mtext><mml:mo>+</mml:mo></mml:msup></mml:math> ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface be helpful for forming SiC films. The microstructure optical properties of nonirradicated ion-beam irradicated have been characterized transmission electron...