A5003183071- Magnetic properties of thin films
- 2D Materials and Applications
- ZnO doping and properties
- Advanced Memory and Neural Computing
- Heusler alloys: electronic and magnetic properties
- Magnetic Properties and Applications
- Metallic Glasses and Amorphous Alloys
- Neural Networks and Applications
- Magnetic Properties and Synthesis of Ferrites
- Multiferroics and related materials
- Perovskite Materials and Applications
- Magnetic and transport properties of perovskites and related materials
- Physics of Superconductivity and Magnetism
Fudan University
2023-2025
Science and Technology on Surface Physics and Chemistry Laboratory
2025
State Key Laboratory of Surface Physics
2023-2024
Achieving field-free current-induced switching of perpendicular magnetization is crucial for the advancement spin–orbit torque magnetic random access memory technology. In our study on Pt/Co/Ru/RuO2(101) system, we have demonstrated via current injection along RuO2[010] axis. We found that system features a tilted easy axis, deviating from out-of-plane orientation toward RuO2[1¯01] direction. The application to this axis generates significant effective field, enabling switching. Our findings...
Exploring novel systems with perpendicular magnetic anisotropy (PMA) is vital for advancing memory devices. In this study, we report an intriguing PMA system involving ultrathin Fe layer on antiferromagnetic (AFM) CoO(001) surface. The measured field inversely proportional to the thickness, indicating interfacial origin of PMA. Temperature-dependent measurements reveal that antiferromagnetism CoO has a negligible effect By leveraging magneto-optic Kerr and birefringence effect, achieve...
Utilizing the phenomenological theory based on crystal symmetry operation, we have established complete angular dependencies of galvanomagnetic effects, encompassing both anisotropic magnetoresistance (AMR) and planar Hall effect (PHE), for ferromagnetic films with C4v symmetry. These were experimentally confirmed via comprehensive mapping AMR PHE in single-crystal Fe(001) at room temperature. We demonstrated that intrinsic magnetization-induced effects are independent field strength by...
Permalloy (Py) films are commonly regarded as soft magnetic materials, wherein the magnetization aligns within film plane. Our studies reveal presence of perpendicular anisotropy in Py thin deposited on collinear antiferromagnetic RuO2(101) surface. By employing both magneto-optical Kerr effect and anomalous Hall effect, we identified interfacial origin observed anisotropy, quantifying it with an energy approximately 0.77 erg/cm2. Current-induced switching Py/RuO2(101) has been achieved...
We investigate the anisotropy of Gilbert damping in $\mathrm{Co}\text{\ensuremath{-}}\mathrm{Fe}\text{\ensuremath{-}}\mathrm{B}(001)$ films with body-centered-cubic crystalline structure using ferromagnetic resonance method. The are epitaxied on $\mathrm{Mg}\mathrm{O}(001)$ by means pulsed-laser deposition a ${\mathrm{Co}}_{0.4}{\mathrm{Fe}}_{0.4}{\mathrm{B}}_{0.2}$ target. measured constant shows clear four-fold symmetry respect to in-plane field orientation maximum-minimum ratio larger...
Enabling field-free current-induced switching of perpendicular magnetization is essential for advancing spin-orbit-torque magnetic random access memory technology. Our research on the Pt/Co/Ru/RuO2(101) system has successfully demonstrated through current injection along RuO2[010] axis. We discovered that exhibits a tilted easy axis, inclined from out-of-plane towards RuO2[-101] direction. The application to this axis generates substantial effective field, which facilitates switching....
Van der Waals (vdW) antiferromagnets are exceptional platforms for exploring the spin dynamics of antiferromagnetic materials owing to their weak interlayer exchange coupling. In this study, we examined resonance spectra anisotropic antiferromagnet CrSBr. addition ordinary modes, observed a dipolar wave mode when microwave field was oriented perpendicular in-plane easy axis Furthermore, our results uncovered pronounced dependency various resonant modes on orientation field, which is pivotal...
Exploring novel systems with perpendicular magnetic anisotropy (PMA) is vital for advancing memory devices. In this study, we report an intriguing PMA system involving ultrathin Fe layer on antiferromagnetic (AFM) CoO(001) surface. The measured field inversely proportional to the thickness, indicating interfacial origin of PMA. Temperature-dependent measurements reveal that antiferromagnetism CoO has a negligible effect By leveraging magneto-optical Kerr and birefringence effect, achieved...