Close-packed planar arrays of nanometer-diameter metal clusters that are covalently linked to each other by rigid, double-ended organic molecules have been self-assembled. Gold nanocrystals, encapsulated a monolayer alkyl thiol molecules, were cast from colloidal solution onto flat substrate form close-packed cluster monolayer. Organic interconnects (aryl dithiols or aryl di-isonitriles) displaced the and adjacent in two-dimensional superlattice quantum dots coupled uniform tunnel junctions....

Abstract Transparent conducting electrodes (TCEs) require high transparency and low sheet resistance for applications in photovoltaics, photodetectors, flat panel displays, touch screen devices imagers. Indium tin oxide (ITO), or other transparent conductive oxides, have typically been used, provide a baseline ( R S ) vs. T relationship. However, ITO is relatively expensive (due to limited abundance of Indium), brittle, unstable, inflexible; moreover, drops rapidly wavelengths above 1000 nm....

Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements this application-transparency, lightweight, flexibility, low-temperature fabrication. However, to realize active-matrix OLED (AMOLED) requires suitable thin-film transistor (TFT) drive Nanowire transistors (NWTs) ideal candidates role due their outstanding electrical characteristics,...

Electronic transport through ruthenium-based redox-active organometallic molecules is measured by self-assembling diruthenium(III) tetra(2-anilinopyridinate)-di(4-thiolphenylethynyl) (trans-Ru2(ap)4(C'CC6H4S-)2 (A) and trans- Ru2(ap)4((C'CC6H4)2S-)2 (B) in nanogap molecular junctions. Voltage sweeps at a high scan rate show low bias current peaks (at +/-0.35 +/- 0.05 V for A +/-0.27 B), which change to plateaus slow scans second conductance peak approximately +/-1.05 0.15 V. The...

The development of nanowire transistors enabled by appropriate dielectrics is great interest for flexible electronic and display applications. In this study, field-effect (NW-FETs) composed individual ZnO nanowires are fabricated using a self-assembled superlattice (SAS) as the gate insulator. 15-nm SAS film used in study consists four interlinked layer-by-layer organic monolayers exhibits excellent insulating properties with large specific capacitance, 180 nF/cm2, low leakage current...

The existence of large densities surface states on InAs pins the Fermi level above conduction band and also degrades electron mobility in thin films nanowires. Field effect transistors have been fabricated characterized "as fabricated" state after passivation with 1-octadecanethiol (ODT). Electrical characterization shows that subthreshold slope devices passivated ODT are superior to respective values unpassivated devices. An X-ray photoelectron spectroscopy study undoped nanowires indicates...

Nonvolatile memory device using indium selenide nanowire as programmable resistive element was fabricated and its switching property studied functions of electrical pulse width voltage magnitude. The can be repeatedly switched between high-resistance (∼1011Ω) low-resistance (∼6×105Ω) states which are attributed to amorphous crystalline states, respectively. Once set a specific state, the resistance is stable measured at voltages up 2V. This observation suggests that programed into two...

Single-layer graphene (SLG) has been proposed as the thinnest protective/barrier layer for wide applications involving resistance to oxidation, corrosion, atomic/molecular diffusion, electromagnetic interference, and bacterial contamination. Functional metallic nanostructures have lower thermal stability than their bulk forms are therefore susceptible high energy photons. Here, we demonstrate that SLG can shield from intense laser radiation would otherwise ablate them. By irradiation via a...

High-heat-flux removal is critical for the next-generation electronic devices to reliably operate within their temperature limits. A large portion of thermal resistance in a traditional chip package caused by resistances at interfaces between device, heat spreaders, and sink; embedding sink directly into heat-generating device can eliminate these interface drastically reduce overall resistance. Microfluidic cooling embedded improves dissipation, with two-phase operation offering potential...

We have studied low-temperature magnetoconductance and observed weak antilocalization in an AlSb/InAs/AlSb quantum-well structure. The spin-orbital field deduced from the data is found to be insensitive photoinduced changes carrier density, suggesting that interfacial-field-induced rather than crystal-field-induced spin splitting predominant cause of scattering. also find a significant enhancement scattering ZnTe/InAs/AlSb structures which can explained by structural asymmetry, thereby...

High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device metrics. To optimize understand the effects interface properties, devices with both Al Au/Ti source/drain contacts, electrical properties following annealing ozone treatment. Ozone-treated single NW-FETs contacts exhibited an on-current (Ion) ∼4 µA at 0.9 Vgs 1.0 Vds, threshold voltage (Vth) 0.2 V,...

One of the important performance metrics emerging nanoelectronic devices, including low dimensional Field Effect Transistors (FETs), is magnitude low-frequency noise. Atomically thin 2D semiconductor channel materials such as MoX2 (X ≡ S, Se) have shown promising transistor characteristics ION/IOFF ratio exceeding 106 and IOFF, making them attractive for next generation devices. However, MoS2 FETs demonstrated to date exhibit high noise levels under ambient conditions. In this letter, we...

We describe a new class of nanoelectronic circuits which exploits the charging behavior in resistively/capacitively linked arrays nanometer-sized metallic islands (quantum dots), self-assembled on resonant tunneling diode, to perform neuromorphic computation. These produce associative memory effects and realize additive short-term (STM) or content addressable (CAM) models neural networks without requiring either large-area/high-power operational amplifiers, massive interconnectivity between...

Nanoscaled Pt conductors were prepared from genetically engineered Tobacco mosaic virus (TMV) templates through cluster deposition on the outer surface of TMV. clusters synthesized and deposited TMV with surface-exposed cysteine via in situ mineralization hexachloroplatinate anions. This was driven by specific binding between thiols solid metal clusters. In addition, Pt-thiolate adducts are suggested to form aqueous solutions that work as nucleation sites for formation The template...

This letter describes a technique for realizing gold (Au) surface with roughness at the atomic scale using techniques compatible integrated device fabrication. The Au layer is electron-beam evaporated on self-assembled monolayer of (3-Mercaptopropyl) trimethoxysilane an oxidized silicon substrate and shows root-mean-square ∼2Å over 1μm2 area. physical stability film toward commonly used chemicals processes photolithography self-assembly, its suitability formation well-ordered organic...

Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with traditional dots surfactants 1-hexadecylamine tri-n-octylphosphine oxide. The size dependence of band gaps in determined from absorption spectra, compared to other experimental results for wires, predictions theory. photoluminescence behavior is also investigated. Efforts enhance efficiencies through photochemical etching presence HF result only thinning or photooxidation, without a...

Single ZnO nanowire (NW) transistors fabricated with self-assembled nanodielectric (SAND) and SiO2 gate insulators were characterized by low-frequency noise variable temperature current-voltage (I-V) measurements. According to the dependence of amplitude, extracted Hooge’s constants (αH) are ∼3.3×10−2 for SAND-based devices ∼3.5×10−1 SiO2-based devices. Temperature-dependent I-V studies show that hysteresis transfer curves threshold voltage shifts significantly smaller than those These...

Fully transparent thin-film transistors (TFTs) based on well-aligned single-walled carbon nanotube (SWCNT) arrays with indium tin oxide (ITO) electrodes are achieved. The fully SWCNT-TFTs could be attractive candidates for future flexible or electronics.

We report fabrication of phase change random access memory (PRAM) using nanowires (NWs) GeTe and In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Se xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> . NWs were grown by a vapor-liquid-solid technique ranged from 40 to 80 nm in diameter several micrometers long. A dynamic switching ratio (on/off ratio) 2200 2 times 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> was realized...

Semiconductor nanowires have been explored as alternative electronic materials for high performance device applications exhibiting low power consumption specs. Electrical transport in III-V nanowire (NW) field-effect transistors (FETs) is frequently governed by Schottky barriers between the source/drain and NW channel. Consequently greatly impacted contacts. Here we present a simple model that explains how ambipolar characteristics of NW-FETs particular achievable on/off current ratio can be...

Semiconductor nanowires have achieved great attention for integration in next-generation electronics. However, with diameters comparable to the Debye length, which would generally be required one-dimensional operation, surface states degrade device performance and increase low-frequency noise. In this study, single In(2)O(3) nanowire transistors were fabricated characterized before after passivation a self-assembled monolayer of 1-octadecanethiol (ODT). Electrical characterization shows that...