A5100830442- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Advanced Thermoelectric Materials and Devices
- Advanced Battery Materials and Technologies
- Nanocluster Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- Advanced battery technologies research
- Graphene research and applications
- Photonic and Optical Devices
- Perovskite Materials and Applications
- Advanced materials and composites
- Microstructure and Mechanical Properties of Steels
- Advanced Nanomaterials in Catalysis
- Chalcogenide Semiconductor Thin Films
- Thermal properties of materials
- Traffic Prediction and Management Techniques
- 2D Materials and Applications
- Semiconductor Quantum Structures and Devices
- Autonomous Vehicle Technology and Safety
- Conducting polymers and applications
- Gas Sensing Nanomaterials and Sensors
- Supercapacitor Materials and Fabrication
- Advanced Sensor and Energy Harvesting Materials
Beijing Institute of Technology
2024
Hefei University
2021
Anhui University
2019-2021
State Council of the People's Republic of China
2021
Nanjing Tech University
2017
Purdue University West Lafayette
2010-2012
Semiconductor nanowires have been explored as alternative electronic materials for high performance device applications exhibiting low power consumption specs. Electrical transport in III-V nanowire (NW) field-effect transistors (FETs) is frequently governed by Schottky barriers between the source/drain and NW channel. Consequently greatly impacted contacts. Here we present a simple model that explains how ambipolar characteristics of NW-FETs particular achievable on/off current ratio can be...
The thermoelectric (TE) fiber, based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), which possesses good flexibility, a low cost, environmental stability and non-toxicity, has attracted more attention due to its promising applications in energy harvesting. This study presents self-powered flexible sensor the TE properties of hollow PEDOT:PSS fiber. structure fiber was synthesized using traditional wet spinning. applied an application for finger touch, showed both...
Appropriately controlling the properties of Si shell in Ge/Si core/shell nanowires permits not only passivation Ge surface states, but also introduces new interface phenomena, thereby enabling novel nanoelectronics concepts. Here, we report a rational synthesis with doped shells. We demonstrate that morphology and thickness shells can be controlled for different dopant types by tuning growth parameters during synthesis. present distinctly electrical characteristics arise from nanowire...
A flexible in-plane p–n heterojunction nano-generator has a unique ability to harvest solar light with broadband spectrum from visible infrared through the phonon-enhanced photothermoelectric effect.
III-V nanowires have attracted plenty of attention because their potential outstanding performance in a wide range applications. However, compared to other nanowires, the synthesis high quality Sb-based is less developed, which obstructs progress towards further In this study we report GaSb and InSb synthesized by simple vapor deposition method. Epitaxial growth on substrates demonstrated. Te doped are achieved through situ doping during process. Electrical measurements nanowire field-effect...
This paper discusses effects of nanoscale contacts to silicon nanowires on contact resistance. The widely used transmission line model (TLM), which treats the semiconductor as an infinitely thin layer, can only predict resistance by assuming a dynamically varying resistivity. ρ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> values must be experimentally obtained for each length, rendering predictive capabilities TLM inadequate beyond...
In this work, the concept of band-to-band tunneling (BTBT) devices is explored and benefits Ge/Si core/shell nanowire heterostructures (NWHs) as a material/geometry-related choice are discussed, namely increased performance accessible by 1D material systems that operate in quantum capacitance limit (QCL), higher currents than available to Si-based structures, compatibility platforms with current manufacturing processes. The realization such requires degenerately doped source an atomically...
Abstract not Available.