Samik DuttaGupta

ORCID: 0000-0002-1530-0933
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About
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Research Areas
  • Magnetic properties of thin films
  • Magnetic and transport properties of perovskites and related materials
  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Physics of Superconductivity and Magnetism
  • Graphene research and applications
  • Magnetic Properties and Applications
  • Topological Materials and Phenomena
  • Magnetic Properties of Alloys
  • Heusler alloys: electronic and magnetic properties
  • Ferroelectric and Negative Capacitance Devices
  • Metallurgical and Alloy Processes
  • Theoretical and Computational Physics
  • Magnetic Field Sensors Techniques
  • Characterization and Applications of Magnetic Nanoparticles
  • Quantum and electron transport phenomena
  • Induction Heating and Inverter Technology
  • Silicon Carbide Semiconductor Technologies
  • ZnO doping and properties
  • Magneto-Optical Properties and Applications
  • Metallic Glasses and Amorphous Alloys
  • Advanced Thermodynamics and Statistical Mechanics
  • Neural Networks and Reservoir Computing
  • Neural Networks and Applications
  • Multiferroics and related materials

Tohoku University
2015-2025

Homi Bhabha National Institute
2023-2025

Saha Institute of Nuclear Physics
2023-2025

Spintronics Research Network of Japan
2015-2023

Institut de Neurosciences Cognitives et Intégratives d’Aquitaine
2023

Université de Bordeaux
2023

Center for Strategic and International Studies
2019-2021

Advanced Institute of Materials Science
2019

Canadian Nautical Research Society
2018

University of York
2017

Skyrmion, a topologically-protected soliton, is known to emerge via electron spin in various magnetic materials. The skyrmion can be driven by low current density and has potential stabilized nanoscale, offering new directions of spintronics. However, there remain some fundamental issues widely-studied ferromagnetic systems, which include difficulty realize stable ultrasmall skyrmions at room temperature, presence the Hall effect, limitation velocity owing topological charge. Here we show...

10.1038/s41467-019-13182-6 article EN cc-by Nature Communications 2019-11-14

Efficient information processing in the human brain is achieved by dynamics of neurons and synapses, motivating effective implementation artificial spiking neural networks. Here, spin-orbit torque switching antiferromagnet/ferromagnet heterostructures studied to show capability material system form synapses for asynchronous The magnetization switching, driven a single current pulse or trains pulses, examined as function width (1 s 1 ns), amplitude, number, pulse-to-pulse interval. Based on...

10.1002/adma.201900636 article EN Advanced Materials 2019-04-16

Abstract The synergy between real and reciprocal space topology is anticipated to yield a diverse array of topological properties in quantum materials. This pursuit addressed by achieving topologically safeguarded magnetic order novel Weyl metallic Heusler alloy, Mn 2 Pd 0.5 Ir Sn. system possesses non‐centrosymmetric D d crystal symmetry with notable spin‐orbit coupling effects. first principles calculations confirm the non‐trivial nature band structure, including 42 pairs nodes at/near...

10.1002/adfm.202424841 article EN Advanced Functional Materials 2025-01-08

We study spin-orbit torque induced magnetization switching in devices consisting of an antiferromagnetic PtMn and ferromagnetic Co/Ni multilayer with sizes ranging from 5 μm to 50 nm. As the size decreases, behavior changes analogue-like stepwise several intermediate levels. The number levels decreases decreasing finally evolves into a binary mode below certain threshold. results are found be explained by unique reversal process this system, where domains comprising polycrystalline grains...

10.1063/1.4977838 article EN Applied Physics Letters 2017-02-27

We study the spin-orbit torque induced magnetization switching in W/CoFeB/MgO heterostructures with W deposited under different sputtering conditions. show that crystal structure and resistivity of depend on employed Switching current nanoscale devices is smaller while effective anisotropy field larger for more resistive channel at lower power higher Ar gas pressure. The spin Hall angle evaluated from probability varies by a factor 2–3 depending controlled

10.1063/1.4967475 article EN Applied Physics Letters 2016-11-07

Abstract The ability to represent information using an antiferromagnetic material is attractive for future spintronic devices. Previous studies have focussed on the utilization of materials with biaxial magnetic anisotropy electrical manipulation. A practical realization these devices limited by requirement material-specific constraints. Here, we demonstrate current-induced switching in a polycrystalline PtMn/Pt metallic heterostructure. comparison transport measurements PtMn and without Pt...

10.1038/s41467-020-19511-4 article EN cc-by Nature Communications 2020-11-11

We perform hysteresis-loop measurement and domain imaging for (11¯00)-oriented D019-Mn3+xSn1-x (−0.11≤x≤0.14) thin films using the magneto-optical Kerr effect (MOKE) compare it with anomalous Hall (AHE) measurement. obtain a large rotation angle of 10 mdeg, comparable bulk single-crystal Mn3Sn. The composition x dependence AHE MOKE shows similar trend, suggesting same origin, i.e., non-vanishing Berry curvature in momentum space. Magnetic observation at saturated state that is explained by...

10.1063/5.0089355 article EN Applied Physics Letters 2022-04-25

Two-dimensional (2D) van der Waals (vdW) magnets and devices have garnered significant attention owing to the stabilization of long range magnetic order down atomic limit, prospect for novel quantum with unique functionalities. To achieve this objective, clarification magnetotransport properties understanding relevant interactions lowering dimensions are extreme importance. Here, few layer Fe3GeTe2 (Co0.25Fe0.75)3GeTe2 nanoflake been investigated. Magnetotransport investigations applied...

10.48550/arxiv.2502.05018 preprint EN arXiv (Cornell University) 2025-02-07

Abstract Spin‐current generation via the anisotropic spin‐split effect has been predicted in antiferromagnetic RuO 2 , where symmetry of plays a critical role spin–orbit torque (SOT). This phenomenon garnered attention for its potential to enable energy‐efficient spintronic devices, such as SOT magnetic random‐access memory. In this study, high‐quality (100) epitaxial film with well‐controlled triple‐domain‐structure is analyzed, and it confirmed that out‐of‐plane spin‐current independent...

10.1002/advs.202413165 article EN cc-by Advanced Science 2025-02-28

Realization of noncentrosymmetric magnetic Weyl metals is expected to exhibit anomalous transport properties stemming from the interplay unusual bulk electronic topology and magnetism. Here, we present spin-valve-like magnetoresistance at room temperature in ferrimagnetic metal ${\mathrm{Mn}}_{2}\mathrm{PdSn}$ that crystallizes inverse Heusler structure. Anomalous displays dominant asymmetric component attributed domain wall electron scattering, indicative behavior. Ab initio calculations...

10.1103/physrevb.110.014417 article EN Physical review. B./Physical review. B 2024-07-11

We investigate the relationship between structural parameters, magnetic ordering, and anomalous Hall effect (AHE) of Mn3+xSn1−x (−0.42 ≤ x +0.23) thin films annealed at various temperatures Ta. The crystal structure changes with Ta, Ta ≥ 500 °C near stoichiometric composition (−0.08 +0.04), epitaxial single-phase D019-Mn3+xSn1−x(101̄0) is obtained. At room temperature, a larger AHE obtained when Mn3Sn lattice constant closer to that bulk formed. temperature dependence shows different...

10.1063/5.0043192 article EN cc-by AIP Advances 2021-06-01

Abstract Two-dimensional (2D) van der Waals (vdW) magnetic materials have attracted a lot of attention owing to the stabilization long range order down atomic dimensions, and prospect novel spintronic devices with unique functionalities. The clarification magnetoresistive properties its correlation underlying configurations is essential for 2D vdW-based devices. Here, effect Co-doping on magnetotransport Fe 3 GeTe 2 been investigated. Magnetotransport measurements reveal an unusual Hall...

10.1038/s41598-021-93402-6 article EN cc-by Scientific Reports 2021-07-08

Antiferromagnet (AFM)/ferromagnet (FM) heterostructures with broken inversion symmetry are perceived to open new opportunities for nonvolatile spintronic devices. Previous studies of such systems have demonstrated an emergence spin-orbit torques (SOTs) in the which strong enough bring about magnetization reversal. The impact and coupling also leads Dzyaloshinskii-Moriya interaction (DMI) governs magnetic configuration In this work, we study SOT-induced effective fields DMI a heterostructure...

10.1063/1.5005593 article EN Applied Physics Letters 2017-10-30

We study spin–orbit torque (SOT) switching in W/CoFeB/MgO structures with various dot sizes (120–3500 nm) using pulsed current of widths τ (800 ps–100 ms) to examine the time and spatial evolution magnetization switching. show that behavior resultant threshold density Jth strongly depend on device size pulse width. The mode a 3500 nm changes from probabilistic reproducible partial as decreases. At = 800 ps, becomes more than 3 times larger long-pulse regime. A decrease 700 does not...

10.7567/jjap.57.04fn02 article EN Japanese Journal of Applied Physics 2018-02-08

We report on the magnetoresistive effects in a metallic antiferromagnet (AFM)/nonmagnet (NM) PtMn/Pt heterostructure with varying thickness of PtMn (1 nm ≤ tPtMn 10 nm). Longitudinal are measured for magnetic field rotations along three mutually perpendicular directions. The results show transformation functional dependencies increase and attributed to spin Hall arising from interaction currents generated by Pt antiferromagnetic PtMn. present findings appreciable an AFM/NM add yet another...

10.1063/1.5049566 article EN Applied Physics Letters 2018-11-12

Creep motion of magnetic domain wall (DW), thermally activated DW dynamics under subthreshold driving forces, is a paradigm to understand the interaction between driven interfaces and applied external forces. Previous investigation has shown that in metallic system interacts differently with current field, manifesting itself as different universality classes for creep motion. In this article, we first review experimental determination current- field-driven creeps Ta/CoFeB/MgO wire, then...

10.1063/1.4974889 article EN cc-by AIP Advances 2017-01-20

We evaluate the stack structure and temperature dependence of spin–orbit torques (SOTs) in metallic antiferromagnet (AFM)/ferromagnet (FM) PtMn/CoFeB heterostructures using an extended harmonic Hall measurement. show that exhibits sizable Slonczewski-like fieldlike SOTs whose magnitude is comparable to with nonmagnetic heavy metals like Pt or Ta. also find our structures are virtually constant temperature. The findings will offer clues understand generation mechanism AFM/FM systems pave way...

10.1063/1.5129829 article EN Applied Physics Letters 2019-12-09

We investigate the effect of Dzyaloshinskii-Moriya interaction (DMI) on domain wall (DW) configurations in W/(Co)FeB/MgO structures with varying ferromagnet (FM) thicknesses. The DW chirality and effective DMI field are evaluated from field-induced motion. results indicate a reversal FM thickness irrespective material (CoFeB or FeB) crystallographic phase W (α β phase). observed change magnitude is supported by an additional measurement spin-orbit torque assisted magnetization switching...

10.1063/1.5084095 article EN Applied Physics Letters 2019-01-28

We investigate spin–orbit torques (SOTs) in heterostructures with Pt1−xMnx alloy and CoFeB as a function of Mn composition (x) by using an extended harmonic Hall measurement. Slonczewski-like field-like SOT efficiencies (ξSL ξFL) show non-monotonic variation different trend respect to x, considerably large ξSL up 0.21 is obtained at x = 0.20. Compared the dependence longitudinal resistivity, low region mainly attributed intrinsic spin-Hall mechanism, whereas higher suggests presence...

10.1063/5.0011448 article EN Applied Physics Letters 2020-07-06

Two-dimensional (2D) van der Waals (vdW) magnets have garnered considerable attention owing to the existence of magnetic order down atomic dimensions, flexibility towards interface engineering and unconventional magnetoresistive properties, offering an attractive platform explore novel phenomena functionalities, prospective for spintronic or quantum information devices. Among promising candidates, vdW ferromagnet (FM) ${\mathrm{Fe}}_{3}{\mathrm{GeTe}}_{2}$ shows unusual magnetotransport...

10.1103/physrevmaterials.6.014002 article EN Physical Review Materials 2022-01-07

The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform explore novel spintronic phenomena functionalities. Layered antiferromagnets (AFMs) exhibiting interesting magnetic structures can serve starting point establish functionalities down the two-dimensional limit. In this work, we magnetoresistive properties spin-ladder AFM ${\mathrm{TaFe}}_{1.25}{\mathrm{Te}}_{3}$. Magnetization studies reveal...

10.1103/physrevmaterials.6.084408 article EN Physical Review Materials 2022-08-12
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