A5065301004- Advancements in Photolithography Techniques
- Optical Coatings and Gratings
- Surface Roughness and Optical Measurements
- Calibration and Measurement Techniques
- Advanced Measurement and Metrology Techniques
- COVID-19 Impact on Reproduction
- Laser Material Processing Techniques
- Welding Techniques and Residual Stresses
- Advanced X-ray Imaging Techniques
- Advanced Surface Polishing Techniques
- Laser-Plasma Interactions and Diagnostics
- Near-Field Optical Microscopy
- COVID-19 Clinical Research Studies
- Optical measurement and interference techniques
- Electron and X-Ray Spectroscopy Techniques
- SARS-CoV-2 and COVID-19 Research
- Spectroscopy and Laser Applications
Klinikum St. Georg
2024
RWTH Aachen University
2020-2024
Jülich Aachen Research Alliance
2021-2022
Abstract The importance of traceable measurements is undeniable within an entire metrology community. However, due to their complexity, the optical measurement techniques suffer from lack guidelines regarding uncertainty evaluation. To address this issue, paper describes full procedure on how perform a comprehensive characterisation advanced instrumentation used in reflectometry, spectroscopic Mueller ellipsometry and scatterometry. Despite being fast accurate, these contactless allow...
The authors present a study on the dimensional characterization of nanoscale line gratings by spectroscopic reflectometry in extreme ultraviolet spectral range (5 nm to 20 wavelength). investigated grating parameters include height, width, sidewall angle and corner radii. demonstrates that utilization shorter wavelengths state-of-the-art optical scatterometry provides high sensitivity with respect geometrical dimensions gratings. Measurable contrasts are demonstrated for variations...
Modern semiconductor structures reach sizes in the nanometer regime. Optical metrology characterizes test for quality assessment of fabrication. The limits radiation to resolve structure can be overcome by shortening wavelength. compact source extreme ultraviolet (EUV) scatterometer presented here samples EUV spectral range using plasma radiation. Reference measurements with synchrotron are carried out a beamline scatterometer. A comparison including Markov chain Monte Carlo sampling shows...
Background: In the extreme ultaviolet (EUV) lithography process performance of photoresist is a crucial factor regarding quality and critical dimensions fabricated structures. Aim: The characterization latent image structures in photoresists during steps before development resist key to understand relation between material resists, selection parameters, resulting Approach: Spectroscopic EUV reflectometry nondestructive metrology technique that measures broadband reflectance samples spectral...
The authors present latent image characterization in photoresists by means of extreme ultraviolet (EUV) spectroscopic reflectometry. optical constants before and after exposure are measured the EUV spectral range. Latent images investigated form periodic line gratings. investigation is performed analysis reflectance curves wavelength range from 5 nm to 20 at grazing incidence angles. Through an based on rigorous electromagnetic modeling, a parameters interest evaluated. This includes...
A simplified model based on data from literature is presented, to determine the x-ray emission spectrum as function of laser pulse energy, wavelength and peak intensity, assess applications radiation safety requirements.
Any modeling of an interaction between photons and matter is based on the optical parameters. The determination these parameters, also called constants or refractive indices, indispensable component for development new elements such as mirrors, gratings, lithography photomasks. Especially in extreme ultraviolet (EUV) spectral region, existing databases indices many materials compositions are inadequate a mixture experimentally measured calculated values from atomic scattering factors....
Fast and non-destructive non-imaging metrology of nanostructures is crucial for the development integrated circuits corresponding in-situ within fabrication processes. Stochastic variations related to gratings local period (line edge roughness, LER) line width LWR) are special interest due their key role minimal achievable structure size. Non-imaging approaches taking these statistic into account quite limited. For scatterometry, models predict a change grating's diffraction efficiency...