A5017240788- Advancements in Photolithography Techniques
- Optical Coatings and Gratings
- Electron and X-Ray Spectroscopy Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Nanofabrication and Lithography Techniques
- Advanced X-ray Imaging Techniques
- Surface Roughness and Optical Measurements
- Calibration and Measurement Techniques
- Advanced Measurement and Metrology Techniques
- Semiconductor materials and devices
- Plasmonic and Surface Plasmon Research
- X-ray Spectroscopy and Fluorescence Analysis
- Advanced Surface Polishing Techniques
- Advanced Electron Microscopy Techniques and Applications
- Electronic and Structural Properties of Oxides
- Photocathodes and Microchannel Plates
- Welding Techniques and Residual Stresses
- Thin-Film Transistor Technologies
- Catalysis and Oxidation Reactions
- Diamond and Carbon-based Materials Research
- Transport and Logistics Innovations
- Optical Polarization and Ellipsometry
- Optical measurement and interference techniques
- Semiconductor Quantum Structures and Devices
- Transport and Economic Policies
Fraunhofer Institute for Laser Technology
2023-2024
RWTH Aachen University
2015-2024
Jülich Aachen Research Alliance
2013-2023
Forschungszentrum Jülich
2023
Stadtwerke Jülich (Germany)
2022
International Society for Optics and Photonics
2016
Fraunhofer Society
2009
Abstract The importance of traceable measurements is undeniable within an entire metrology community. However, due to their complexity, the optical measurement techniques suffer from lack guidelines regarding uncertainty evaluation. To address this issue, paper describes full procedure on how perform a comprehensive characterisation advanced instrumentation used in reflectometry, spectroscopic Mueller ellipsometry and scatterometry. Despite being fast accurate, these contactless allow...
Pulsed Laser Deposition is a commonly used non-equilibrium physical deposition technique for the growth of complex oxide thin films. A wide range parameters known to influence properties samples and films, especially oxygen-vacancy concentration. One parameter has up this point been neglected due challenges separating its from impinging species during growth: UV-radiation plasma plume. We here present experiments enabled by specially designed holder allow separation these two influences. The...
The main purpose of this work is the experimental determination process window for achromatic Talbot lithography with partially coherent extreme ultraviolet (EUV) radiation. This has been performed using EUV laboratory exposure tool. It consists a discharge produced plasma source direct beam path to phase-shifting transmission mask, avoiding losses due additional optical components, photoresist-coated wafer, and positioning system each component. Both mask are optimized 11-nm wavelength....
In this article, the possibilities and limitations of proximity lithography with extreme ultraviolet (EUV) radiation are explored theoretically experimentally. Utilizing partially coherent EUV a wavelength 10.88 nm from Xe/Ar discharge plasma source, patterning various nanoantenna arrays has been performed. The experimental results compared numerical scalar diffraction simulations, it is shown that printing in Fresnel mode can enable production high-resolution features even lower resolution...
The authors present a study on the dimensional characterization of nanoscale line gratings by spectroscopic reflectometry in extreme ultraviolet spectral range (5 nm to 20 wavelength). investigated grating parameters include height, width, sidewall angle and corner radii. demonstrates that utilization shorter wavelengths state-of-the-art optical scatterometry provides high sensitivity with respect geometrical dimensions gratings. Measurable contrasts are demonstrated for variations...
Modern semiconductor structures reach sizes in the nanometer regime. Optical metrology characterizes test for quality assessment of fabrication. The limits radiation to resolve structure can be overcome by shortening wavelength. compact source extreme ultraviolet (EUV) scatterometer presented here samples EUV spectral range using plasma radiation. Reference measurements with synchrotron are carried out a beamline scatterometer. A comparison including Markov chain Monte Carlo sampling shows...
We present a method for fabrication of large arrays nano-antennas using extreme-ultraviolet (EUV) illumination. A discharge-produced plasma source generating EUV radiation around 10.88 nm wavelength is used the illumination photoresist via mask in proximity printing setup. The metallic nanoantennas utilizes bilayer and employs lift-off process. impact Fresnel-diffraction light on shape nanostructures has been investigated. It shown how by use same rectangular apertures transmission mask,...
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Background: In the extreme ultaviolet (EUV) lithography process performance of photoresist is a crucial factor regarding quality and critical dimensions fabricated structures. Aim: The characterization latent image structures in photoresists during steps before development resist key to understand relation between material resists, selection parameters, resulting Approach: Spectroscopic EUV reflectometry nondestructive metrology technique that measures broadband reflectance samples spectral...
In this study we analyze the impact of process and growth parameters on structural properties germanium (Ge) quantum dot (QD) arrays. The arrays were deposited by molecular-beam epitaxy pre-patterned silicon (Si) substrates. Periodic pits with diameters between 120 20 nm pitches ranging from 200 down to 40 etched into substrate prior growth. perfection two-dimensional QD was evaluated based SEM images. two processing steps directed self-assembly Ge is investigated. First, a thin Si buffer...
We present a coherent diffraction imaging (CDI) experiment using high-frequency discharge plasma based, extreme ultraviolet (EUV) source. By different illumination geometries, we generated EUV beams witha varying degree of spatial coherence, which were used to produce far field patterns from test objects. then successfully reconstructed an wavefront defined by circular aperture. The work explores the feasibility compact tabletop CDI source emerged technology development lithography, can...
When it comes to the patterning of periodic structures like lines and spaces or contact hole arrays interference lithography can be effectively applied. By use ultrashort wavelengths in extreme ultraviolet (EUV) range, structure sizes pushed into sub-100 nm region. Using advanced schemes, such as achromatic Talbot imaging, high-quality large-area realized, e.g. for resist stochastics tests well fabrication processes research also small-batch production. Since only requires medium spatial...
In this paper, the design of an efficient illuminator for extreme ultraviolet (EUV) applications such as photolithography, metrology, and microscopy is investigated. Illuminators are arrangements optical components that allow us to tailor parameters a targeted application. For EUV spectral range, illuminators commonly realized by arrangement several multilayer mirrors. Within publication, methods developed intensity distribution, spatial coherence, bandwidth using only one mirror....
In this work we present the capabilities of designed and realized extreme ultraviolet laboratory exposure tool (EUVLET) which has been developed at RWTH-Aachen, Chair for Technology Optical Systems (TOS), in cooperation with Fraunhofer Institute Laser (ILT) Bruker ASC GmbH. Main purpose setup is direct application research facilities companies small batch production, where fabrication high resolution periodic arrays over large areas required. The can also be utilized resist characterization...
New multilayers of boron carbide/cerium dioxide (B4C/CeO2) combination on silicon (Si) substrate are manufactured to represent reflective-optics candidates for future lithography at 6.x nm wavelength. This is one only a few attempts make this kind. Combination several innovative experiments enables detailed study optical properties, structural and interface profiles the in order open up room further optimization manufacturing process. The profile visualized by high-angle annular dark-field...
The spectral range of extreme ultraviolet radiation (XUV or EUV) is an active area research incorporating many scientific fields such as microscopy, lithography reflectometry. During the last decade, a lot effort has been put into transferring known techniques developed at linear accelerators laboratory using discharge-produced plasmas (DPPs) laser-produced (LPPs) alternative light source. In particular, semiconductor industry in need on-site tools shorter wavelength for production and...
The potential of extreme ultraviolet (EUV) computational proximity lithography for fabrication arbitrary nanoscale patterns is investigated. We propose to use a holographic mask (attenuating phase shifting mask) consisting structures two levels. This approach allows printing arbitrary, non-periodic without using high-resolution imaging optics. designed wavelength 13.5 nm with conventional electron beam resist as the medium (pixel size 50 nm). performance evaluated by EUV radiation different...
In this paper the authors present EUV laboratory exposure tool in a new configuration for in-band operation at wavelength of 13.5 nm, named EUV-LET 2.0. Compared to previous working 10.9 which was aimed cost-efficient general nanostructuring, main applications 2.0 can be found industrial research, development and quality control photoresists. The is capable photoresist characterization terms sensitivity, contrast, outgassing behavior resolution. Additionally, utilized transmission...
In this contribution nanoscale gratings are characterized by means of broadband EUV spectroscopy with wavelengths from 10 nm to 15 nm. The study focuses on the specifics spectral range that can be beneficial for metrology applications in lithography. Experimental investigations carried out fused silica line a stand-alone laboratory-based setup. A corresponding sensitivity is analyzing influence grating parameter variations reflectance curves. Subsequently, experimental uncertainties...
EUV lithography is introduced in semiconductor fabrication processes, which makes maximizing yield and throughput increasingly important. One key component the use of a high-transmission pellicle to keep particles out focal plane thereby minimize their impact on imaging. Imec initiated development promising approach based network carbon nanotubes (CNT), has advantage many tunable structural parameters form membrane. A balance between membrane robustness particle non-permeability one side low...
The authors present latent image characterization in photoresists by means of extreme ultraviolet (EUV) spectroscopic reflectometry. optical constants before and after exposure are measured the EUV spectral range. Latent images investigated form periodic line gratings. investigation is performed analysis reflectance curves wavelength range from 5 nm to 20 at grazing incidence angles. Through an based on rigorous electromagnetic modeling, a parameters interest evaluated. This includes...
BackgroundCompact extreme ultraviolet (EUV) exposure tools utilizing partially coherent radiation are ideally suited for industrial EUV resist qualification regarding sensitivity, contrast, and resolution. For the broad applicability of technology, achievable resolution is crucial requires thorough investigation.AimThe investigation limiting factors achromatic Talbot lithography an important step in creating compact high-resolution patterning, accelerating research development photoresists...
The EUV laboratory exposure tool (EUV-LET) is a versatile stand-alone resist patterning tool. Main applications are characterization for industrial lithography as well the of high-resolution arrays over large areas required in research and small-volume production. High-resolution patterns achieved by interference based on achromatic Talbot effect. theoretical resolution limit (ATL) 10 nm half-pitch (HP) mainly resist-limited, long necessary transmission masks can be fabricated. In this paper...