A5090281372- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Ion-surface interactions and analysis
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Electron and X-Ray Spectroscopy Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Organic Electronics and Photovoltaics
- Ferroelectric and Piezoelectric Materials
- Silicon Nanostructures and Photoluminescence
- Advanced Memory and Neural Computing
- Acoustic Wave Resonator Technologies
- Ferroelectric and Negative Capacitance Devices
- Gas Sensing Nanomaterials and Sensors
- Analytical chemistry methods development
- Surface Roughness and Optical Measurements
- Metal and Thin Film Mechanics
- Mass Spectrometry Techniques and Applications
- Semiconductor materials and interfaces
- Molecular Junctions and Nanostructures
- Conducting polymers and applications
- Physics of Superconductivity and Magnetism
- Pain Management and Treatment
- Advanced ceramic materials synthesis
- Neuroscience and Neural Engineering
University of Verona
2023
Federal Office for the Environment
2023
Janssen (Italy)
2019-2023
Thales (Italy)
2019
Istituto Nazionale Genetica Molecolare
2008
Istituto Nazionale per la Fisica della Materia
2002-2005
University of Trento
1994-1999
We report on zinc oxide thin films grown by atomic layer deposition at a low temperature, which is compatible with thermal budget required for some novel electronic devices. By selecting appropriate precursors and process parameters, we were able to obtain controllable electrical from heavily n-type the resistive ones. Optimization of growth together temperature led ZnO films, in no defect-related photoluminescence bands are observed. Such show anticorrelation between mobility free-electron...
We report on the electrical properties of thin film transistors based zinc oxide (ZnO) layers grown by low temperature (100–170°C) atomic layer deposition. As evidenced through Hall effect measurements, a drastic decrease carrier concentration occurred for ZnO films at 100°C. Time flight–secondary ions mass spectroscopy analysis revealed that this is associated with an increase hydroxide groups in which suppressed oxygen vacancy formation. Transistors fabricated from 100°C exhibit high...
Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top poly(3-hexylthiophene) allows the fabrication diodes featuring a rectification ratio nearly 105 at ±4 V and current density 104 A/cm2. Electrical characteristics discussed taking into account chemical structure stack energy band diagram.
In this article, we investigate the oxygen diffusivity in ZrO2 and HfO2 thin films deposited on Silicon (100) by atomic layer deposition. particular study kinetics of SiO2 interfacial growth upon rapid thermal annealing atmosphere at high temperature using isotopically enriched O218. The oxide is studied with time-of-flight secondary ion mass spectrometry transmission electron microscopy. This technique allows us to measure thickness interface between Si as well isotopic composition those...
We report on the growth by atomic layer deposition of HfO2 films HF-last treated Ge(001) substrates using HfCl4 as a Hf source and either O3 or H2O oxygen sources. The choice precursor strongly influences structural, chemical, electrical properties films: Those grown exhibit local epitaxial growth, large amount contaminants such chlorine carbon, frequency dispersion capacitance-voltage (C–V) characteristics. Films are good insulators well-shaped C–V curves with minimum accumulation...
Image-guided biopsy is the most common technique for breast cancer diagnosis. Although magnetic resonance imaging (MRI) has highest sensitivity in lesion detection, ultrasound (US) guidance generally preferred due to its non-invasiveness and real-time image feedback during insertion. In this work, we propose an autonomous robotic system US-guided of lesions identified on pre-operative MRI. After initial MRI registration, US probe attached manipulator compresses tissues until a pre-determined...
Silicon nanocrystals embedded in a thin oxide layer can be used as charge storage elements nonvolatile memory devices. The structural characteristics of the and their position determine electrical properties In this work, silicon have been formed by ultralow-energy implantation (0.65–2.0 keV) 10 nm thermally grown SiO2 film on Si (100) followed thermal treatment. A time flight secondary ion mass spectrometry (TOF-SIMS) methodology has developed to detect presence characterize them. allows...
Atomic layer deposition (ALD) growth of high-κ dielectric films (ZrO2 and HfO2) was performed using ZrCl4, HfCl4, H2O as precursors. In this work, we use time flight secondary ion mass spectrometry to investigate the chlorine distribution in ALD grown ZrO2 HfO2 films, its evolution during rapid thermal processes nitrogen atmosphere. Chlorine outdiffusion is found depend strongly upon annealing temperature weakly time. While concentration significantly decreased already at 900 °C, it...
Albumin adsorbed on a radiofrequency glow discharge (RFGD) thin film from hexafluoropropylene was characterized by x-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The amount of protein as function the concentration estimated with XPS following atomic percentage nitrogen compared to fluorine, carbon oxygen. albumin increases steeply between 10−4 10−3 mg ml−1 very slowly thereafter. Intensities protein-related peaks in ToF-SIMS spectra are...
Zirconium dioxide films are grown in 200 atomic layer deposition cycles. tetrachloride (ZrCl4) and water (H2O) used as precursors. A relatively high dielectric constant (κ=22), wide band gap, conduction offset (5.8 1.4 eV, respectively) indicate that zirconium is a most promising substitute for silicon gate complementary metal–oxide–semiconductor devices. However, crystallization chlorine ions the might affect their electrical properties. These produced during which ZrCl4 precursor reacts...