A5103205878- Semiconductor Quantum Structures and Devices
- Advanced Thermodynamics and Statistical Mechanics
- Quantum and electron transport phenomena
- Diamond and Carbon-based Materials Research
- Physics of Superconductivity and Magnetism
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Advanced Semiconductor Detectors and Materials
- Quantum Mechanics and Applications
- High-pressure geophysics and materials
- Surface and Thin Film Phenomena
- Force Microscopy Techniques and Applications
- Ancient and Medieval Archaeology Studies
- Glass properties and applications
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- thermodynamics and calorimetric analyses
- Material Dynamics and Properties
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Carbon Nanotubes in Composites
- Chalcogenide Semiconductor Thin Films
- Historical and Architectural Studies
- Electrochemical Analysis and Applications
- Metal and Thin Film Mechanics
Czech Academy of Sciences, Institute of Physics
2009-2023
Czech Academy of Sciences
2003-2017
IMEC
2009
Electrical transport properties of thin boron doped nanocrystalline diamond films with thicknesses 60–500nm have been studied. The Raman spectra measured exhibit Fano resonances, characteristic for B concentrations close to the metal-to-insulator transition. Upon increasing concentration, sp2 carbon related resonances vanish. In such boron-doped films, a positive magnetoresistance could be observed at liquid helium temperatures. show conductivity similar that B-doped epitaxial without any...
In this letter we present results of magnetotransport measurements, carried out on heavily nitrogen-doped ultrananocrystalline diamond films, prepared by plasma-enhanced chemical vapor deposition. This material having at room temperature appreciably high electric conductivity (∼4200Sm−1) revealed surprisingly Kelvin temperatures a giant negative magnetoresistance reaching up to 22% 1.28K and 8T. The analysis experimental data has borne evidence the fact that transport in subsystem character...
Deep level transient spectroscopy (DLTS) measurements were carried out on GaN/AlGaN/SiC heterostructures prepared by low-pressure metalorganic vapor phase epitaxy. Si-doped n-GaN layers grown using an n-AlGaN nucleation layer (8% and 30% of aluminum) two kinds p-type 4H-SiC substrates. The DLTS spectra on-axis (0001) samples exhibit a dominant peak majority carrier trap with apparent activation energy close to 0.80 eV capture cross section about 5×10−14 cm2 regardless the AlGaN composition....
Abstract Enormous research effort has been put into optimizing organic-based opto-electronic systems for efficient generation of free charge carriers. This optimization is mainly due to typically high dissociation energy (0.1-1 eV) and short diffusion length (10 nm) excitons in organic materials. Inherently, interplay microscopic structural, chemical, properties plays crucial role. We show that employing combining advanced scanning probe techniques can provide us significant insight the...
It is a remarkable empirical fact, known for long time, that in certain self-organized periodic chemical reactions, such as Liesegang's or Belousov-Zhabotinsky's the product of molecular weight precipitate, precipitation length period, and speed order universal Planck's quantum action h. Based on fact classical diffusions are processes, which indistinguishable configuration space, criterion terms diffusion constants has been established. This enables one to find out conditions under behavior...
Dark current–voltage (I–V) characteristic measurement in the temperature range from −190 °C to 65 was carried out on GaSb p-n homojunctions prepared by low-pressure metalorganic vapor phase epitaxy. It shown that charge transport mechanism these is strongly affected growth rate of epitaxial layers. Samples at higher (40 nm/min.) exhibit an anomalous low-temperature peak tunneling current which can be explained presence a narrow band energies due high concentration native defects, probably...