A5060648506- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- GaN-based semiconductor devices and materials
- Quantum Dots Synthesis And Properties
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Ga2O3 and related materials
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Spectroscopy and Laser Applications
- Chemical Thermodynamics and Molecular Structure
- ZnO doping and properties
- Quantum and electron transport phenomena
- Silicon Nanostructures and Photoluminescence
- Thermal and Kinetic Analysis
- Photocathodes and Microchannel Plates
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Chemical Physics Studies
- Chalcogenide Semiconductor Thin Films
- Laser Design and Applications
- Diamond and Carbon-based Materials Research
- Phase Equilibria and Thermodynamics
- Radiation Detection and Scintillator Technologies
- solar cell performance optimization
- Advancements in Semiconductor Devices and Circuit Design
Czech Academy of Sciences, Institute of Physics
2014-2023
Czech Academy of Sciences
2003-2023
Institute of Physics of the Slovak Academy of Sciences
2004-2018
Czech Academy of Sciences, Nuclear Physics Institute
2016
University of Chemistry and Technology, Prague
2009-2010
Akzo Nobel (Czechia)
2005
Charles University
1981
Color centers in diamonds have shown excellent potential for applications quantum information processing, photonics, and biology. Here we report chemical vapor deposition (CVD) growth of nanocrystalline diamond (NCD) films as thin 5–6 nm with photoluminescence (PL) from silicon-vacancy (SiV) at 739 nm. Instead conventional 4–6 detonation nanodiamonds (DNDs), prepared employed hydrogenated 2 DNDs (zeta = +36 mV) to form extremely dense (∼1.3 × 1013 cm–2), (2 ± 1 nm), smooth (RMS roughness <...
Nanodiamonds (NDs) are versatile, broadly available nanomaterials with a set of features highly attractive for applications from biology over energy harvesting to quantum technologies.
Vapor pressures of four organic iodides, 1-iodo-2-methylpropane (CAS Registry No. 513-38-2), 1-iodo-3-methylbutane 541-28-6), 1-iodohexane 638-45-9), and iodocyclohexane 626-62-0), were measured using the static method in technologically important temperature range (254 to 308) K. The experimental data fitted with Clarke Glew equation. To our knowledge, this is first time that vapor-pressure measurements for are reported given range. For 1-iodo-3-methylbutane, present update only available...
This work suggests new morphology for the AlGaN/GaN interface which enhances electron mobility in two-dimensional gas (2DEG) of high-electron transistor (HEMT) structures. The widely used technology preparation GaN channels HEMT transistors is growth at a high temperature around 1000 °C an H2 atmosphere. main reason these conditions aim to prepare atomically flat epitaxial surface and achieve layer with lowest possible carbon concentration. In this work, we show that smooth not necessary...
The aim of this work is to red shift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the metalorganic vapour phase epitaxy (MOVPE) prepared structure InAs/GaAs QDs covered a GaAsSb strain-reducing layer. Our results proved that type I or II band alignment can be controlled both composition and QD size. Maintaining heterostructure important for high luminescence efficiency emission wavelength stability structure. simulation electron in InAs with...
We have measured the temperature dependence of dark conductance porous silicon (PS) in range between 200 and 300 K. It is possible to interpret observed Berthelot type as surface controlled by tunneling through a thermally vibrating barrier.
InGaN/GaN structures are studied as potential candidates for superfast scintillation detectors and show the leading decay time of around 1 ns intense luminescence.
Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence combination photomodulated reflectance spectroscopy used as main characterisation methods for growth optimisation. Results show that photoreflectance is an excellent tool of QD structures wetting layers (thickness and composition) identification spacers vertically stacked QDs structures.
We report on the observation of superlinear electroluminescence (EL) in nanoheterostructures based GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb quantum well (QW) active region, grown by metal organic vapor phase epitaxy. Electroluminescence spectra for different driving currents were measured at temperatures 77 and 300 K. It is shown that such structure exhibits dependence optical power drive current its increase 2–3 times range 50–200 mA. This occurs due to impact ionization...
We report on the electrochemical preparation of porous GaAs substrates in fluoride-iodide aqueous electrolytes for lattice mismatched epitaxial growth from vapor phase. The aim is to gain control over uniformity pore nucleation layer and branching below this achieve structures with a high degree porosity periodicity while leaving minimum damage substrate surface. Layers InxGa1-xAs varying In content are grown different geometries depths. Substantial differences surface morphology...
In addition to widely used photoluminescence spectroscopy photovoltaic measurement of quantum dot structures can give complementary information about electron and hole transitions. Structures with self-organized InAs dots in GaAs matrix were grown by the Stranski–Krastanov mechanism using low pressure metalorganic vapor phase epitaxy technique. Two types samples studied, single multiple layers. We have shown that surface photovoltage be for study single, as well layer structures.