A5070323355- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Semiconductor Lasers and Optical Devices
- Quantum and electron transport phenomena
- Quantum Dots Synthesis And Properties
- Silicon Nanostructures and Photoluminescence
- Spectroscopy and Laser Applications
- Laser Design and Applications
- Chalcogenide Semiconductor Thin Films
- Photonic and Optical Devices
- Nanowire Synthesis and Applications
- GaN-based semiconductor devices and materials
- Optical properties and cooling technologies in crystalline materials
- Advanced Optical Sensing Technologies
- Physics of Superconductivity and Magnetism
- Surface and Thin Film Phenomena
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Solid State Laser Technologies
- Semiconductor materials and interfaces
- Photonic Crystals and Applications
- Terahertz technology and applications
- Spectroscopy and Quantum Chemical Studies
- Carbon Nanotubes in Composites
- Ion-surface interactions and analysis
Ioffe Institute
2016-2025
Pavlov Institute of Physiology of the Russian Academy of Sciences
2023-2024
ITMO University
2018-2020
Physico-Technical Institute
2002-2015
Russian Academy of Sciences
2005-2015
Physical and Technical Institute
2013
Peter the Great St. Petersburg Polytechnic University
2010-2012
The mechanism of Auger recombination in type-II heterostructures is studied theoretically. It shown that the rate a power function temperature rather than an exponential as bulk materials. feasibility suppression process demonstrated. possibility controlling to be very important for development optoelectronic devices with improved characteristics.
The principal mechanisms of Auger recombination nonequilibrium carriers in semiconductor heterostructures with quantum wells (QW's) are investigated. It is shown that there exist three fundamentally different (i) thresholdless, (ii) quasithreshold, and (iii) threshold types. rate the thresholdless process depends on temperature only slightly. energy quasithreshold essentially varies QW width close to zero for narrow QW's. processes dominate QW's, while prevail wide limiting case a...
A theoretical analysis and computer simulation of the threshold current density jth characteristic temperature T0 multiple quantum well lasers (MQWLs) are presented. Together with spontaneous radiative recombination, Auger recombination lateral diffusive leakage carriers from active region included into model. first-principle calculation is performed. It shown that controlled by currents. When calculating carrier densities, electrons in barrier regions properly taken account. Redistribution...
A theory of the Stark effect in semiconductor quantum dots has been developed for case dominating polarization interaction an electron and a hole with nanocrystal surface. shift well levels interband absorption range uniform external electric field is determined by quantum-confinement quadratic effect. An electro-optical method proposed, making it possible to estimate characteristic dot radius at which three-dimensional excitons can exist.
The effect of strain on thresholdless Auger recombination in quantum wells has been studied theoretically. A detailed analysis overlap integrals between the initial and final states carriers carried out. It is shown that affects both qualitatively quantitatively integral electron hole states. coefficient calculated for InAlAsSb well its dependence parameters, strain, temperature analyzed.
We report on the observation of superlinear electroluminescence (EL) in nanoheterostructures based GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb quantum well (QW) active region, grown by metal organic vapor phase epitaxy. Electroluminescence spectra for different driving currents were measured at temperatures 77 and 300 K. It is shown that such structure exhibits dependence optical power drive current its increase 2–3 times range 50–200 mA. This occurs due to impact ionization...
Two short arginine-containing tripeptides, H-Arg-Arg-Arg-OH (TP1) and Ac-Arg-Arg-Arg-NH2 (TP2), have been shown by the patch-clamp method to modulate NaV1.8 channels of DRG primary sensory neurons, which are responsible for generation nociceptive signals. Conformational analysis tripeptides indicates that key role in ligand-receptor binding TP1 TP2 channel is played two positively charged guanidinium groups arginine side chains located at characteristic distance ~9 Å from each other. The...
Biexponential behavior of the time-resolved photoluminescence decay from ground state has been studied over a temperature range 77–300 K on samples with varying sized self-assembled InAs∕GaAs quantum dot ensembles controlled by substrate misorientation alone. The slower second component is considerably longer than first one, and measured to be as long 300 ns. This slow attributed carrier recapturing indirect radiative recombination processes.
Several arginine-containing short peptides have been shown by the patch-clamp method to effectively modulate NaV1.8 channel activation gating system, which makes them promising candidates for role of a novel analgesic medicinal substance. As demonstrated organotypic tissue culture method, all active and inactive studied do not trigger downstream signaling cascades controlling neurite outgrowth should be expected evoke adverse side effects on level upon their administration. The...
A microscopic quantum-mechanical analysis of the intervalence band absorption radiation (IVA) with hole transition into spin-orbit split-off has been made. It was found that IVA can heavily influence threshold characteristics and quantum efficiency heterolasers based on InAs. detailed study as functions temperature heterostructure parameters analyzed taking account IVA.