A5007976546- Nanowire Synthesis and Applications
- Force Microscopy Techniques and Applications
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- Quantum Dots Synthesis And Properties
- Semiconductor materials and interfaces
- Physics of Superconductivity and Magnetism
- Ga2O3 and related materials
- Integrated Circuits and Semiconductor Failure Analysis
- Metal and Thin Film Mechanics
- Near-Field Optical Microscopy
- Semiconductor materials and devices
- Magnetic properties of thin films
- Quantum and electron transport phenomena
- Surface and Thin Film Phenomena
- ZnO doping and properties
- Corrosion Behavior and Inhibition
- solar cell performance optimization
- Advancements in Semiconductor Devices and Circuit Design
- Metal Extraction and Bioleaching
- Semiconductor Quantum Structures and Devices
- Magnesium Alloys: Properties and Applications
Czech Academy of Sciences, Institute of Physics
2013-2023
Czech Academy of Sciences
2013-2023
In this study, advanced techniques such as atom probe tomography, atomic force microscopy, X-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy were used to determine the corrosion mechanism of as-ECAPed Zn-0.8Mg-0.2Sr alloy. The influence microstructural surface features on was investigated. Despite its significance, composition before exposure is often neglected by scientific community. analyses revealed formation thin ZnO, MgO, MgCO3 layers material exposure. These...
This work suggests new morphology for the AlGaN/GaN interface which enhances electron mobility in two-dimensional gas (2DEG) of high-electron transistor (HEMT) structures. The widely used technology preparation GaN channels HEMT transistors is growth at a high temperature around 1000 °C an H2 atmosphere. main reason these conditions aim to prepare atomically flat epitaxial surface and achieve layer with lowest possible carbon concentration. In this work, we show that smooth not necessary...
We present our recent study of SnS particles in the backdrop significant developments that have taken place so far for which a review status this material, its structural, optical, electronic characteristics, and device performance is described. To further improve low-cost chalcogenide-based solar cells, we propose to employ third-generation cells fabrication scheme, where an intermediate bandgap layer can be incorporated CIS cell increase current generation efficiency. For purpose quantum...
Abstract Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-ray diffraction techniques together with statistical analysis atomic force microscope images in order to determine the impact In concentration and threading dislocations (TDs) density on V-pit formation. It was shown that our samples, V-pits epilayer matched TD a screw component substrate. Pure edge TDs do not affect density. The influences size V-pits, but their
Abstract Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of manipulation their magnetic structure via electrical, optical, and terahertz pulses, enabling convenient approaches for switching between magnetoresistive states film information storage. However, and, thus, efficiency can be affected by morphology growth defects. In this study, properties are investigated probing asymmetrical growth‐related uniaxial anisotropy electric conductivity contact‐free...
In this work we compare luminescence results obtained on InGaN/GaN multiple quantum well (QW) structures with 10 and 30 QWs. The aim is to increase the intensity of faster blue QW emission decrease defect band, showing a slower decay time, which undesired for fast scintillator applications. We demonstrate that increasing number InGaN QWs an efficient method reach goal. improvement sample higher explained by influence increased size V‐pits number. Thinner side wall serve as barriers separate...
Solar cells with radial junctions based on silicon nanowires were investigated using correlative microscopy in order to determine the nature and origin of previously reported inhomogeneity their electronic properties. For correlating various techniques, we have prepared sets three Vickers type nanoindents arranged a right triangle 20 µm sides as marks local frame reference. Due shape indents (squares 4 clear diagonals) position can be located high precision by microscopes. This makes it...
Recent progress in Liquid Phase Crystallization (LPC) of silicon enabled reaching a material quality thin-film solar cells on glass comparable to multicrystalline wafers. However, decreasing the absorber thickness requires taking measures for efficient coupling and trapping light into cell device. Here, we successfully integrated different periodic sub-micrometer sized structures at sun-facing air-glass superstrate interface 5 x cm2 LPC by nanoimprint lithography. These structured...
We report the results of a microscopic study nucleation and early growth stages metal-catalyzed silicon nanowires in plasma-enhanced chemical vapor deposition. The is investigated as function different deposition conditions metal catalysts (Sn, In Au) using correlation atomic force microscopy scanning electron microscopy. This method enabled us to visualize individual catalytic nanoparticles before after nanowire identify key parameters influencing under plasma. size position are found play...
We investigate hole-selective passivating contacts that consist of an interfacial layer silicon oxide (SiOx) and a boron-doped SiCx(p). The fabrication process these involves annealing step at temperatures above 750 °C which crystallizes the initially amorphous diffuses dopants across into wafer to facilitate charge transport, but it can also disrupt SiOx necessary for wafer-surface passivation. To transport mechanism carriers through selective contact its changes during process, we utilize...
SnS quantum dots have great potential for photovoltaic applications because they consist of non-toxic and environmentally benign material, making them most suitable use in consumer products such as solar panels. The synthesis this type nanostructure is carried out by a colloidal approach at room temperature under nitrogen atmosphere. By proper selection the solvent it possible to modify shape nanoparticles from nanorods spherical or square structures (see cover image). This due preferential...
In this article, atomic force microscopy was used for nanoscale characterization of ultra-thin tungsten films which were deposited on silicon substrate. Radio-frequency magnetron sputtering deposition the surface.
Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of manipulation their magnetic structure via electrical, optical, and terahertz pulses electric fields, enabling convenient approaches to switching between magnetoresistive states film for information storage. However, and, thus, efficiency can be affected by morphology growth defects. In this study, we investigate properties probing defect-related uniaxial anisotropy conductivity contact-free transmission...
We present the development of passivating contacts for high-efficiency silicon solar cells using oxide (SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> ) and carbide (SiCx)-based layers. discuss a comprehensive optimization SiCx-based hole contact reaching implied open circuit voltages >715 mV. In addition, we introduce based on nanocrystalline SiO (nc-SiO targeting compatibility with higher process temperatures as well increased...