A5071901943- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Organic Electronics and Photovoltaics
- Perovskite Materials and Applications
- Copper-based nanomaterials and applications
- Molecular Junctions and Nanostructures
- Silicon Carbide Semiconductor Technologies
- Adhesion, Friction, and Surface Interactions
- Conducting polymers and applications
- Metal and Thin Film Mechanics
- Nanofabrication and Lithography Techniques
- 3D IC and TSV technologies
- Advanced Sensor and Energy Harvesting Materials
- Fiber-reinforced polymer composites
- Advanced Surface Polishing Techniques
- solar cell performance optimization
- Copper Interconnects and Reliability
Australian National University
2020-2024
National Renewable Energy Laboratory
2022
École Polytechnique Fédérale de Lausanne
2015-2020
Swiss Federal Laboratories for Materials Science and Technology
2013-2014
Cu2ZnSn(S,Se)4 thin layers processed from solution-deposited earth-abundant precursors emerge as absorber materials for low-cost film solar cells. A frequently observed drawback of the chemical solution processing—poor crystallinity chalcogenide absorber—can be overcome by employing a sodium-containing reactive agent. We demonstrate massive improvement in grain growth presence sodium. It enhances surface chemisorption selenium molecules and can promote formation liquid Na2Sex phases during...
Solution processing of inorganic thin films has become an important thrust in material research community because it offers low‐cost and high‐throughput deposition various functional coatings devices. Especially film solar cells – macroelectronic devices that rely on consecutive layers large‐area rigid flexible substrates could benefit from solution approaches order to realize their nature. This article critically reviews existing for chalcogenide with extension other technologies. Only true...
The use of passivating contacts compatible with typical homojunction thermal processes is one the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation industrial p-type structure consists a chemically grown thin oxide layer, which capped boron-doped silicon-rich carbide [SiCx(p)] layer and then annealed at 800–900 °C. Transmission electron microscopy reveals that...
Abstract The year 2014 marks the point when silicon solar cells surpassed 25% efficiency mark. Since then, all devices exceeding this mark, both small and large area, with contacts on sides of wafer or just at back, have utilized least one passivating contact. Here, a contact is defined as group layers that simultaneously provide selective conduction charge carriers effective passivation surface. widespread success has prompted increased research into ways in which carrier‐selective...
We present an electron selective passivating contact based on a tunneling SiO. capped with phosphorous doped silicon carbide and prepared high-temperature thermal anneal. investigate in detail the effects of preparation conditions SiC.(n) (i.e., gas flow precursor annealing temperature) interface recombination rate, dopant in-diffusion, optical properties using test structures solar cells. On structures, our investigation reveals that samples annealed at temperatures 800-850 °C exhibit...
We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 °C, excellent surface passivation the p-type planar crystalline wafer is obtained for both contacts. Their potential demonstrated device level employing a...
We analyze the recombination properties of passivating electron selective contacts based on nanostructured silicon oxide. Our contact design is an interfacial buffer oxide capped with a bilayer structure phosphorus-doped and which annealed at 900 °C. investigate in detail effects initial dopant concentration anneal dwell time in-diffusion, formation, interface recombination. investigation addresses also hydrogenation defects effect indium-tin-oxide (ITO) sputtering, allowing us to separate...
It has previously been shown that ex situ phosphorus-doped polycrystalline silicon on oxide (poly-Si/SiOx) passivating contacts can suffer a pronounced surface passivation degradation when subjected to firing treatment at 800 °C or above. The behavior depends strongly the processing conditions, such as dielectric coating layers and temperature. current work further studies stability of poly-Si proposes mechanism for observed based role hydrogen. Secondary ion mass spectrometry is applied...
Doped polysilicon-based passivating contacts are expected to be a key technology enable higher efficiency in mass-produced silicon solar cells coming years, with the world market share increase almost 9-fold 35% 2031. The excellent carrier selectivity of passivated enables low-resistance extraction carriers without compromising surface passivation and has been instrumental recent advances high-efficiency cells. Here, we report on application phosphorus-doped polysilicon large-area...
Over 29%-efficient monolithic perovskite/Si tandem solar cells based on a poly-Si/SiO 2 passivating contact cell.
Abstract This work compares the firing response of ex‐situ doped p‐ and n‐type polysilicon (poly‐Si) passivating contacts identifies possible mechanisms underlying their distinct behavior. The p‐type poly‐Si shows greater stability than poly‐Si, particularly at a higher temperature, which results in substantial increase recombination current density parameter J 0 from 9 to 96 fA/cm 2 upon 900°C for comparison an 11 30 poly‐Si. It is observed that only suffer slight degradation or even...
SiOx/poly-Si passivating carrier-selective contacts are one of the most promising concepts for next generation high-efficiency silicon solar cells called TOPCon and POLO cells. Experiments found that their ultrathin SiOx layer may be susceptible to formation Si-rich pinholes. In cells, these pinholes act as undesirable recombination centers, while designed with being crucial operation. Motivated by remarkable experimental results, in this paper, we report extensive molecular dynamics...
In this study, we explore the utilization of inkjet printing technology with liquid ink to fabricate boron-doped polycrystalline silicon (poly-Si)/SiOx passivating contacts. The impacts substrate morphology, baseplate temperature, and surface oxide on performance were investigated achieve distinct printed patterns. Moreover, a pre-oxidation process at 750 °C for 30 min was conducted as strategy prevent dopant spreading from pattern via gas phase during high-temperature annealing. Thereafter,...
Defects and impurities in silicon limit carrier lifetimes the performance of solar cells. This work explores use fluorine to passivate defects for cell applications. We present a simple method incorporate atoms into bulk interfaces by annealing samples coated with thin thermally evaporated fluoride overlayers. It is found that incorporation does not only improve but can also silicon. The effect fluorination observed be comparable hydrogenation, passivating grain boundaries multicrystalline...
Polycrystalline silicon-based (poly-Si) passivating contacts are a promising technology for the next generation of high-efficiency crystalline silicon solar cells. Ex-situ doping via spin-on-dopant solutions is potential method to fabricate patterned poly-Si contacts, like those used in interdigitated back contact architectures. This study compares performance phosphorous doped fabricated from different industry-compatible intrinsic films and process. We explore influence grain size on...
We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing phosphorus-diffused front side. Our structure consists of thin SiOx tunneling layer grown by wet chemistry and stack layers deposited in one single run plasma-enhanced chemical vapor deposition. The the were tailored to protect interfacial oxide layer, act as source for boron diffusion wafer connect external metallisation low resistivity. found this tolerated annealing at 900 °C...
Herein, we fabricate and characterize p-type passivating contacts based on industrial intrinsic polycrystalline silicon (poly-Si)/thermal-SiOx/n-type crystalline Si (c-Si) substrates using a spin-on doping technique. The impacts of drive-in temperature, dwell time, poly-Si thickness the boron-doped are investigated. First, contact passivation quality improves with an increasing thermal budget (<950 °C) but then decreases again for excessive annealing (>950 °C). Second, film shows only little...
This work compares the firing response of n-type silicon wafers passivated by n- and p-type polysilicon (polySi)/SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> contacts, assesses changes in their properties using various characterization tools, including Fourier-transform infrared spectroscopy (FTIR), secondary ion mass spectrometry (SIMS) micro-photoluminescence (µ-PL) spectroscopy. Ptype poly-Si exhibits greater thermal stability...