A5063179073- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Perovskite Materials and Applications
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- High voltage insulation and dielectric phenomena
- Advancements in Battery Materials
- solar cell performance optimization
- Advanced Battery Materials and Technologies
- Chalcogenide Semiconductor Thin Films
- Ga2O3 and related materials
- Advanced Materials and Mechanics
- 2D Materials and Applications
- Force Microscopy Techniques and Applications
- Photonic and Optical Devices
- Graphene research and applications
- Neuroscience and Neural Engineering
- Laser Material Processing Techniques
- Conducting polymers and applications
Nanjing University
2016-2025
Collaborative Innovation Center of Advanced Microstructures
2016-2025
China Agricultural University
2025
National Laboratory of Solid State Microstructures
2006-2025
Shenzhen University
2024
Institute of High Energy Physics
2023
Chinese Academy of Sciences
2023
Liaoning University
2022-2023
École Polytechnique
2011-2022
Centre National de la Recherche Scientifique
2011-2022
Abstract Inorganic perovskites with special semiconducting properties and structures have attracted great attention are regarded as next generation candidates for optoelectronic devices. Herein, using a physical vapor deposition process controlled excess of PbBr 2 , dual‐phase all‐inorganic perovskite composite CsPbBr 3 –CsPb Br 5 thin films prepared light‐harvesting layers incorporated in photodetector (PD). The PD has high responsivity detectivity 0.375 A W −1 10 11 Jones, respectively,...
Inorganic CsPbX3 (X = Cl, Br, I, or hybrid among them) perovskite quantum dots (IPQDs) are promising building blocks for exploring high performance optoelectronic applications. In this work, the authors report a new structure that marries IPQDs to silicon nanowires (SiNWs) radial junction structures achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar-blind spectrum. A compact uniform deployment of upon sidewall low-reflective 3D junctions enables strong light field...
Seeking high‐capacity, high‐rate, and durable anode materials for lithium‐ion batteries (LIBs) has been a crucial aspect to promote the use of electric vehicles other portable electronics. Here, novel alloy‐forming approach convert amorphous Si (a‐Si)‐coated copper oxide (CuO) core–shell nanowires (NWs) into hollow highly interconnected Si–Cu alloy (mixture) nanotubes is reported. Upon simple H 2 annealing, CuO cores are reduced diffused out with a‐Si shell, producing nanotubes, which can...
Hybrid perovskite photodetectors (PDs) exhibit outstanding performance in the ultraviolet–visible (UV–vis) spectrum but have poor detectability deep ultraviolet (DUV) region (200–350 nm). In this work, a novel inorganic–hybrid architecture that incorporates dual-phase (CsPbBr3–Cs4PbBr6) inorganic material as down-conversion window layer and hybrid light capture was prepared to achieve faster, highly sensitive photodetection DUV spectrum. A film coated on back surface of photodetector enables...
Inorganic perovskite materials have demonstrated outstanding performance in the field of photovoltaic devices due to their superior charge carrier transport properties and excellent thermal stability. In particular, inorganic derivative phases show special terms phase stability optoelectronic application, especially transition investigation. However, commercial applications still face challenges large recombination at interface, resulting poor efficiency metastable such as iodide existing...
Toxic gas monitoring at room temperature (RT) is of great concern to public health and safety, where ultrathin silicon nanowires (SiNWs), with diameter <80 nm, are ideal one-dimensional candidates achieve high-performance field-effect sensing. However, a precise integration the tiny SiNWs as active sensor channels has not been possible except for use expensive inefficient electron beam lithography etching. In this work, we demonstrate an integratable fabrication sensors based on orderly SiNW...
Plasma-enhanced low temperature growth (<300 °C) of silicon nanowires (SiNWs) and hierarchical structures via a vapor–liquid–solid (VLS) mechanism are investigated. The SiNWs were grown using tin indium as catalysts prepared by in situ H2 plasma reduction SnO2 ITO substrates, respectively. Effective at temperatures 240 °C have been achieved, while is found to be more ideal than achieving better size density control the SiNWs. Ultra-thin (4–8 nm) silica nanowires, sprouting from dendritic...
Silicon nanowires (SiNWs) are becoming a popular choice to develop new generation of radial junction solar cells. We here explore bismuth- (Bi-) catalyzed growth and doping SiNWs, via vapor–liquid–solid (VLS) mode, fabricate amorphous Si n–i–p cells in one-pump-down low-temperature process single chamber plasma deposition system. provide the first evidence that catalyst SiNW cores, caused by incorporating Bi atoms as n-type dopant, can be utilized cells, with record open circuit voltage Voc...
In this work, we report a strong photoluminescence (PL) enhancement of monolayer MoS2 under different treatments. We find that by simple ambient annealing treatment in the range 200 °C to 400 °C, PL emission can be greatly enhanced factor up two orders magnitude. This attributed factors: first, formation Mo-O bonds during exposure introduces an effective p-doping layer; second, localized electrons formed around related defective sites where effectively with higher binding energy resulting...
Organometal halide perovskite materials are outstanding candidates not only for solar cells but also photo-detection.
Quasi-1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large-area elastomers are advantageous candidates for developing various high-performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter <80 nm, can be precisely grown into desired locations via in-plane solid-liquid-solid (IPSLS) mechanism, reliably batch-transferred onto large area polydimethylsiloxane (PDMS) elastomers....
We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform surrounding $a\mathrm{\text{\ensuremath{-}}}\mathrm{Si}\ensuremath{\mathbin:}\mathrm{H}$ matrix into crystalline SiNWs. The can be $\ensuremath{\sim}\mathrm{mm}$ long, with smallest diameter down to $\ensuremath{\sim}22\text{ }\text{ }\mathrm{nm}$. A high rate...
In situ generation of indium catalyst droplets and subsequent growth crystalline silicon nanowires on ITO by plasma-enhanced CVD are reported, the wurtzite (Si–IV) phase is clearly evidenced in some wires.
The ability to program highly modulated morphology upon silicon nanowires (SiNWs) has been fundamental explore new phononic and electronic functionalities. We here exploit a nanoscale locomotion of metal droplets demonstrate large readily controllable engineering crystalline SiNWs, from straight ones into continuous or discrete island-chains, at temperature <350 °C. This accomplished via tin (Sn) droplet mediated in-plane growth where amorphous Si thin film is consumed as precursor produce...
Harvesting solar energy as heat has shown fascinating applications for the purification of polluted or saline water to address scarcity issue globally.
Hybrid perovskite solar cells (PSCs) are promising candidates in exploring high performance flexible photovoltaics, where a low-temperature-processed metal oxide electron transfer layer (ETL) is highly preferable.
Line-shape engineering is a key strategy to endow extra stretchability 1D silicon nanowires (SiNWs) grown with self-assembly processes. We here demonstrate deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns the aid indium droplets that absorb amorphous Si precursor thin film produce ultralong c-Si NWs along programmed step edges. A reliable and faithful single run growth c-SiNWs over turning tracks different local curvatures has...