Kunji Chen

ORCID: 0000-0002-4990-9253
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Silicon Nanostructures and Photoluminescence
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Semiconductor materials and interfaces
  • Quantum Dots Synthesis And Properties
  • Chalcogenide Semiconductor Thin Films
  • Advanced Memory and Neural Computing
  • Silicon and Solar Cell Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Photonic Crystals and Applications
  • ZnO doping and properties
  • Diamond and Carbon-based Materials Research
  • Ferroelectric and Negative Capacitance Devices
  • Photonic and Optical Devices
  • Luminescence Properties of Advanced Materials
  • Perovskite Materials and Applications
  • Neuroscience and Neural Engineering
  • Nonlinear Optical Materials Studies
  • Ion-surface interactions and analysis
  • Advancements in Battery Materials
  • Advanced Battery Materials and Technologies
  • Gas Sensing Nanomaterials and Sensors
  • Electronic and Structural Properties of Oxides
  • Phase-change materials and chalcogenides

Nanjing University
2016-2025

Collaborative Innovation Center of Advanced Microstructures
2016-2025

National Laboratory of Solid State Microstructures
2010-2025

Nanjing University of Science and Technology
2022

Nanjing Library
2015

Queen's University
2014

State Laboratory
2011

Laboratoire de physique des Solides
2010

Shanghai Institute of Technical Physics
2001

Southeast University
1994

Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities retina provides a promising pathway to achieving vision sensor with highly efficient image processing. Here, we demonstrate prototype that operates via gate-tunable positive negative photoresponses van der Waals (vdW) vertical heterostructures. The emulates not only bipolar cells photoreceptors but also unique connectivity between photoreceptors. By tuning gate...

10.1126/sciadv.aba6173 article EN cc-by-nc Science Advances 2020-06-24

Inorganic CsPbX3 (X = Cl, Br, I, or hybrid among them) perovskite quantum dots (IPQDs) are promising building blocks for exploring high performance optoelectronic applications. In this work, the authors report a new structure that marries IPQDs to silicon nanowires (SiNWs) radial junction structures achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar-blind spectrum. A compact uniform deployment of upon sidewall low-reflective 3D junctions enables strong light field...

10.1002/adma.201700400 article EN Advanced Materials 2017-03-29

Seeking high‐capacity, high‐rate, and durable anode materials for lithium‐ion batteries (LIBs) has been a crucial aspect to promote the use of electric vehicles other portable electronics. Here, novel alloy‐forming approach convert amorphous Si (a‐Si)‐coated copper oxide (CuO) core–shell nanowires (NWs) into hollow highly interconnected Si–Cu alloy (mixture) nanotubes is reported. Upon simple H 2 annealing, CuO cores are reduced diffused out with a‐Si shell, producing nanotubes, which can...

10.1002/adfm.201504014 article EN Advanced Functional Materials 2015-12-15

Abstract Compared to human vision, conventional machine vision composed of an image sensor and processor suffers from high latency large power consumption due physically separated sensing processing. A neuromorphic system with brain-inspired visual perception provides a promising solution the problem. Here we propose demonstrate prototype by networking retinomorphic memristive crossbar. We fabricate using WSe2/h-BN/Al2O3 van der Waals heterostructures gate-tunable photoresponses, closely...

10.1093/nsr/nwaa172 article EN cc-by National Science Review 2020-07-23

Toxic gas monitoring at room temperature (RT) is of great concern to public health and safety, where ultrathin silicon nanowires (SiNWs), with diameter <80 nm, are ideal one-dimensional candidates achieve high-performance field-effect sensing. However, a precise integration the tiny SiNWs as active sensor channels has not been possible except for use expensive inefficient electron beam lithography etching. In this work, we demonstrate an integratable fabrication sensors based on orderly SiNW...

10.1021/acsami.1c00585 article EN ACS Applied Materials & Interfaces 2021-03-22

In order to broaden the applications of water splitting for hydrogen production, it is highly desired develop an ideal catalyst, which can operate in a wide pH range. this work, we proposed amorphous RuSex nanoparticles (NPs) with disordered structure introduce abundant surface defects, contribute enhanced HER activity. The optimized RuSe1.5 NPs exhibited pH-universal activity, only require overpotential 24, 30, and 12 mV reach current density 10 mA cm–2 0.5 M H2SO4 (pH = 0), 1 PBS 7), KOH...

10.1021/acscatal.3c04498 article EN ACS Catalysis 2024-01-22

Visible photoluminescence has been observed in crystallized a-Si:H/a-SiNx:H multiquantum-well structures at room temperature. The MQW heterostructures consisting of 72 layers were formed by computer controlled plasma-enhanced chemical-vapor deposition method and then Ar+ laser annealing technique. crystallinity average grain size the silicon microcrystals determined means Raman x-ray diffraction spectroscopy. samples with well-layer thickness Ls=40 Å showed an intense which is peaked 2.1 eV...

10.1063/1.108309 article EN Applied Physics Letters 1992-10-26

Abstract The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development next generation non-volatile memory. Here we show that high performance and random access (RRAM) based on an Al/a-SiN x :H/p + -Si structure can achieved by tuning Si dangling bond conduction paths. We reveal intrinsic relationship between bonds N/Si ratio for a-SiN :H films, which ensures programming current reduced to less than 1 μA increasing value x....

10.1038/srep15762 article EN cc-by Scientific Reports 2015-10-28

The unipolar resistive switches are investigated in silicon highly rich SiOx (x &amp;lt; 0.75) films. as-deposited SiO0.73 films contain high concentration (1.0 × 1019 cm−3) of dangling bonds (Si-DBs) and SiO2≡Si–Si O3≡Si–Si configurations. Unlike the currently reported normal silicon-rich &amp;gt; 1.8) based devices, our Pt/SiO0.73/Pt devices operate at lower voltage regime (&amp;lt;2.0 V) exhibit much resistance (∼30 Ω). reset (∼0.7 is than set (∼1.7 performance reduced vacuum environment....

10.1063/1.4776695 article EN Applied Physics Letters 2013-01-28

Plasmon-enhanced solar photothemal battery (STPB) technology allows all-solid-state lithium–air batteries to operate at temperatures as low −73 °C.

10.1039/c9ee04039k article EN Energy & Environmental Science 2020-01-01

Organometal halide perovskite materials are outstanding candidates not only for solar cells but also photo-detection.

10.1039/c7ra01430a article EN cc-by-nc RSC Advances 2017-01-01

Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior Si nanocrystals (Si NCs) has not been fully understood so far. In present work, P-doped NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate surface states of NCs. Meanwhile, low temperature spectra indicate that some incorporated into NCs substitutionally impurities increase with concentration or annealing...

10.1038/srep22888 article EN cc-by Scientific Reports 2016-03-09

Quasi-1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large-area elastomers are advantageous candidates for developing various high-performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter <80 nm, can be precisely grown into desired locations via in-plane solid-liquid-solid (IPSLS) mechanism, reliably batch-transferred onto large area polydimethylsiloxane (PDMS) elastomers....

10.1002/advs.202105623 article EN cc-by Advanced Science 2022-01-29

Developing a bifunctional electrocatalyst with remarkable performance viable for overall water splitting is increasingly essential industrial-scale renewable energy conversion. However, the current still requires large cell voltage to drive due unsuitable adsorption/desorption capacity of reaction intermediates, which seriously hinders practical application splitting. Herein, unique SiOx/Ru nanosheet (NS) material was proposed as high-performance The NSs show superior in hydrogen evolution...

10.1021/acsami.2c21953 article EN ACS Applied Materials & Interfaces 2023-02-03

The ability to program highly modulated morphology upon silicon nanowires (SiNWs) has been fundamental explore new phononic and electronic functionalities. We here exploit a nanoscale locomotion of metal droplets demonstrate large readily controllable engineering crystalline SiNWs, from straight ones into continuous or discrete island-chains, at temperature <350 °C. This accomplished via tin (Sn) droplet mediated in-plane growth where amorphous Si thin film is consumed as precursor produce...

10.1038/ncomms12836 article EN cc-by Nature Communications 2016-09-29

Harvesting solar energy as heat has shown fascinating applications for the purification of polluted or saline water to address scarcity issue globally.

10.1039/c8ta08138g article EN Journal of Materials Chemistry A 2018-01-01

Hybrid perovskite solar cells (PSCs) are promising candidates in exploring high performance flexible photovoltaics, where a low-temperature-processed metal oxide electron transfer layer (ETL) is highly preferable.

10.1039/c7ra01110e article EN cc-by-nc RSC Advances 2017-01-01

Line-shape engineering is a key strategy to endow extra stretchability 1D silicon nanowires (SiNWs) grown with self-assembly processes. We here demonstrate deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns the aid indium droplets that absorb amorphous Si precursor thin film produce ultralong c-Si NWs along programmed step edges. A reliable and faithful single run growth c-SiNWs over turning tracks different local curvatures has...

10.1021/acs.nanolett.7b03658 article EN Nano Letters 2017-11-30

Silicon (Si) is a promising anode material for next-generation high-energy lithium-ion batteries (LIBs).

10.1039/c8ta01694a article EN Journal of Materials Chemistry A 2018-01-01

Hybrid organic-inorganic perovskites (HOIPs) exhibit long electronic carrier diffusion length, high optical absorption coefficient, and impressive photovoltaic device performance. At the core of any optoelectronic lie charge transport properties, especially microscopic mechanism scattering, which must efficiently affect function. In this work, CH3NH3PbI3 (MAPbI3) films were fabricated by a vapor solution reaction method. Temperature-dependent Hall measurements introduced to investigate...

10.1186/s11671-019-3022-y article EN cc-by Nanoscale Research Letters 2019-06-18

Abstract Flexible near‐infrared (NIR) photodetectors (PDs) are desired for accurate heart rate monitoring, based directly on arterial‐blood‐volume‐change detection, instead of indirect oximetry technology. In this work, a robust 3D construction flexible a‐SiGe:H p ‐ i n radial junction (RJ) PDs is explored upon soft Al foils, working at NIR wavelength 800 nm, which has the highest skin transparency and least absorption difference from oxyhemoglobin deoxyhemoglobin variation. The RJ‐PDs...

10.1002/adfm.202107040 article EN Advanced Functional Materials 2021-10-07
Coming Soon ...