- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced machining processes and optimization
- Advanced Surface Polishing Techniques
- Gas Sensing Nanomaterials and Sensors
- Advanced Sensor and Energy Harvesting Materials
- Ferroelectric and Negative Capacitance Devices
- Advanced Chemical Sensor Technologies
- Analytical Chemistry and Sensors
- Advanced Machining and Optimization Techniques
- Oceanographic and Atmospheric Processes
- Ocean Waves and Remote Sensing
- Thin-Film Transistor Technologies
- Advanced Memory and Neural Computing
- Graphene research and applications
- Climate variability and models
- Aquatic and Environmental Studies
- Advanced biosensing and bioanalysis techniques
- Transition Metal Oxide Nanomaterials
- Modular Robots and Swarm Intelligence
- Multi-Agent Systems and Negotiation
- Metal Alloys Wear and Properties
- ZnO doping and properties
- Simulation Techniques and Applications
Yangzhou University
2023-2024
Nanjing University
2020-2024
Collaborative Innovation Center of Advanced Microstructures
2020-2022
University of Southampton
2020
Dalian University of Technology
1992-2015
Ocean University of China
2015
Toxic gas monitoring at room temperature (RT) is of great concern to public health and safety, where ultrathin silicon nanowires (SiNWs), with diameter <80 nm, are ideal one-dimensional candidates achieve high-performance field-effect sensing. However, a precise integration the tiny SiNWs as active sensor channels has not been possible except for use expensive inefficient electron beam lithography etching. In this work, we demonstrate an integratable fabrication sensors based on orderly SiNW...
Quasi-1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large-area elastomers are advantageous candidates for developing various high-performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter <80 nm, can be precisely grown into desired locations via in-plane solid-liquid-solid (IPSLS) mechanism, reliably batch-transferred onto large area polydimethylsiloxane (PDMS) elastomers....
Bottom-up catalytic growth offers a high-yield, versatile, and powerful tool for the construction of versatile 3D nanocomplexes, while major challenge is to achieve precise location uniformity control, as guaranteed by top-down lithography. Here, an unprecedented uniform reliable integration 10-layer stacked Si nanowires (SiNWs) has been accomplished, very first time, via new groove-confined tailored catalyst formation guided upon truncated sidewall SiO2/SiNx multilayers. The SiNW array...
Abstract Fabricating ultrathin silicon (Si) channels down to critical dimension (CD) <10 nm, a key capability implementing cutting‐edge microelectronics and quantum charge‐qubits, has never been accomplished via an extremely low‐cost catalytic growth. In this work, 3D stacked Si nanowires (SiNWs) are demonstrated, with width height of W nw = 9.9 ± 1.2 nm (down 8 nm) H 18.8 1.8 that can be reliably grown into the ultrafine sidewall grooves, approaching CD 10 technology node, thanks new...
3D integration of stacked Si nanowire arrays <italic>via</italic> a self assembly growth on Bosch-etched sidewalls and successful demonstration high performance staked channel transistors with an impressive on/off current >10<sup>7</sup>.
Growing high quality silicon nanowires (SiNWs) at elevated temperature on cooler polymer films seems to be contradictive but highly desirable for building performance flexible and wearable electronics. In this work, we demonstrate a superfast (vnw > 3.5 μm·s–1) growth of SiNWs polymer/glass substrates, powered by self-selected laser 808 nm heating indium catalyst droplets that absorb amorphous Si layer produce SiNWs. Because the tiny heat capacity nanodroplets, SiNW can quickly heated up...
Abstract Inorganic semiconductor nanowires, known for their exceptional electronic properties and mechanical flexibility, are widely regarded as the ideal 1D channel materials creating high‐performance flexible electronics. In this work, integration of ordered arrays silicon nanowire (SiNW) field effect transistors (FETs) directly onto plastic substrates is showcased. The self‐aligned crystalline SiNW multi‐channels first grown through an in‐plane solid–liquid–solid mechanism on rigid...
Ultrathin silicon nanowires (SiNWs) are ideal 1D channels to construct high performance nanoelectronics and sensors. We here report on a high-density catalytic growth of orderly ultrathin SiNWs, with diameter down toDnw=27±2nmand narrow NW-to-NW spacing onlySnw ∼80 nm, without the use high-resolution lithography. This has been accomplished via terrace-confined strategy, where tiny indium (In) droplets move sidewall terraces absorb precoated amorphous Si layer as precursor produce...
A new method for predicting the chip flow angle of inserts with different cutting conditions was studied in non-free oblique machining process. The effects major edge, minor corner radius and parameters (depth cut feed rate) on direction were by calculating components thrust force edges based hypothesis that is also direction. This verified comparing calculated experimental results single-point nose-radiused edge conditions. prediction under show good agreement data.
Pure In 2 O 3 and Cd‐loaded hollow porous nanofibers with different Cd/In molar ratios (1/20, 1/10, 1/1) were synthesized by electrospinning method. X‐ray diffraction (XRD), field emission scanning electron microscope (FE‐SEM), transmission microscopy (TEM) used to characterize the nanofibers. The composed of small grains. average grain sizes diameters increased increasing ratios. formaldehyde sensing properties sensors based on pure investigated in concentration range 0.5∼100 ppm. Moreover,...
An improved chip flow model of a nose-radiused cutting tool in oblique turning is developed considering geometry variations based on the equivalent edge method. The model-building procedure divided arbitrary area engaged with workpiece into single and according to depth cut nose radius. individual effects angle are distinguished by method total obtained. prediction results obtained under different parameters show good agreement experimental data.
Catalytic growth of silicon nanowires (SiNWs), mediated by metallic droplet, provide ideal quasi-1D channels to construct high performance field effect transistor (FET). However, the incorporation catalytic metal atoms into SiNWs has significant impact on FET characteristics, and thus needs be better understood controlled fulfil its potential for electronics. In this work, we focus indium (In) planar SiNWs, grown via an in-plane solid-liquid-solid (IPSLS) mechanism, device performance. It is...
Training medical personnel using standardized patients (SPs) remains a complex challenge, requiring extensive domain expertise and role-specific practice. Most research on Large Language Model (LLM)-based simulated focuses improving data retrieval accuracy or adjusting prompts through human feedback. However, this focus has overlooked the critical need for patient agents to learn presentation pattern that transforms into human-like responses unsupervised simulations. To address gap, we...
FET biosensors operating in an electrolyte experience a monotonic, temporal and relatively slow change threshold voltage caused by the hydration of insulator layer between FET's channel. Minimising this is critical as, over time, drain current n-channel FETs decreases, making it difficult to distinguish signal generated response analyte - receptor binding events background noise biosensor. While Rapid Thermal Annealing known diminish drift its negative effects, not compatible with low...
FET biosensors operating in an electrolyte experience a monotonic, temporal and relatively slow change threshold voltage caused by the hydration of insulator layer between FET's channel. Minimising this is critical as, over time, drain current n-channel FETs decreases, making it difficult to distinguish signal generated response analyte - receptor binding events background noise biosensor. While Rapid Thermal Annealing known diminish drift its negative effects, not compatible with low...