A5071195238- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Solid State Laser Technologies
- Advanced Memory and Neural Computing
- Luminescence Properties of Advanced Materials
- Advancements in Semiconductor Devices and Circuit Design
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Diamond and Carbon-based Materials Research
- Advanced Fiber Laser Technologies
- Silicon and Solar Cell Technologies
- Photorefractive and Nonlinear Optics
- ZnO doping and properties
- Ferroelectric and Negative Capacitance Devices
- Photonic and Optical Devices
- Photonic Crystals and Applications
- Neuroscience and Neural Engineering
- Nonlinear Optical Materials Studies
- Conducting polymers and applications
Nantong University
2024-2025
Nanjing University
2016-2025
Collaborative Innovation Center of Advanced Microstructures
2016-2025
National Laboratory of Solid State Microstructures
2011-2025
Hefei University of Technology
2024
North China Electric Power University
2024
Xi'an Jiaotong University
2024
Guizhou Normal University
2023
Tongji University
2023
Ningbo Institute of Industrial Technology
2023
The strain dependence of conductance monolayer graphene has been studied experimentally here. results illustrate the notable transitions: slight increase, dramatic decrease, and sudden dropping by gradually increasing uniaxial strain. behaves reversibly tuning elastic tensile up to 4.5%, while it fails recover after plastic deformation at 5%. change in due is surprisingly high, which indicates potential applications electromechanical devices.
Challenges in fabricating all-perovskite tandem solar cells as modules rather than single-junction configurations include growing high-quality wide-bandgap perovskites and mitigating irreversible degradation caused by halide metal interdiffusion at the interconnecting contacts. We demonstrate efficient using scalable fabrication techniques. By systematically tuning cesium ratio of a methylammonium-free 1.8-electron volt mixed-halide perovskite, we improve homogeneity crystallization for...
Perovskite and chalcogenide quantum dots (QDs) are important nano semiconductors. It has been a challenge to synthesize heterostructural QDs combining perovskite with tailorable photoelectronic properties. In this report, CsPbX3-PbS (X = Cl, Br, I) were successfully synthesized via room temperature in situ transformation route. The show tunable dual emission feature the visible near-infrared (NIR) photoluminescence (PL) corresponding CsPbX3 PbS, respectively. Typically, formation evolution...
Abstract Integrated circuit anti-counterfeiting based on optical physical unclonable functions (PUFs) plays a crucial role in guaranteeing secure identification and authentication for Internet of Things (IoT) devices. While considerable efforts have been devoted to exploring PUFs, two critical challenges remain: incompatibility with the complementary metal-oxide-semiconductor (CMOS) technology limited information entropy. Here, we demonstrate all-silicon multidimensionally-encoded PUFs...
Abstract Inorganic perovskites with special semiconducting properties and structures have attracted great attention are regarded as next generation candidates for optoelectronic devices. Herein, using a physical vapor deposition process controlled excess of PbBr 2 , dual‐phase all‐inorganic perovskite composite CsPbBr 3 –CsPb Br 5 thin films prepared light‐harvesting layers incorporated in photodetector (PD). The PD has high responsivity detectivity 0.375 A W −1 10 11 Jones, respectively,...
Inorganic CsPbX3 (X = Cl, Br, I, or hybrid among them) perovskite quantum dots (IPQDs) are promising building blocks for exploring high performance optoelectronic applications. In this work, the authors report a new structure that marries IPQDs to silicon nanowires (SiNWs) radial junction structures achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar-blind spectrum. A compact uniform deployment of upon sidewall low-reflective 3D junctions enables strong light field...
Very high power conversion efficiencies (PCEs) have been demonstrated by multijunction cells made of epitaxial III–V semiconductors; but they are too expensive to manufacture for terrestrial applications. Multijunction solar that can be fabricated with cheap and simple solution-processing techniques offer a lower-cost alternative reach PCEs. Here we demonstrate the solution processing efficient all-perovskite triple-junction using optimal-bandgap perovskites. Monolithic an open-circuit...
Hybrid perovskite photodetectors (PDs) exhibit outstanding performance in the ultraviolet–visible (UV–vis) spectrum but have poor detectability deep ultraviolet (DUV) region (200–350 nm). In this work, a novel inorganic–hybrid architecture that incorporates dual-phase (CsPbBr3–Cs4PbBr6) inorganic material as down-conversion window layer and hybrid light capture was prepared to achieve faster, highly sensitive photodetection DUV spectrum. A film coated on back surface of photodetector enables...
Inorganic perovskite materials have demonstrated outstanding performance in the field of photovoltaic devices due to their superior charge carrier transport properties and excellent thermal stability. In particular, inorganic derivative phases show special terms phase stability optoelectronic application, especially transition investigation. However, commercial applications still face challenges large recombination at interface, resulting poor efficiency metastable such as iodide existing...
Toxic gas monitoring at room temperature (RT) is of great concern to public health and safety, where ultrathin silicon nanowires (SiNWs), with diameter <80 nm, are ideal one-dimensional candidates achieve high-performance field-effect sensing. However, a precise integration the tiny SiNWs as active sensor channels has not been possible except for use expensive inefficient electron beam lithography etching. In this work, we demonstrate an integratable fabrication sensors based on orderly SiNW...
Abstract Solar cells comprising earth‐abundant and non‐toxic elements with applicable bandgaps high absorption coefficients have attracted considerable interest over the past several decades are important devices for addressing future demand clean renewable energy. Antimony sulfide (Sb 2 S 3 ) crystal material effectively meets these requirements owing to its suitable bandgap, coefficient, electron hole mobilities, earth abundance, excellent stability. Solution‐processed Sb films essential...
In order to broaden the applications of water splitting for hydrogen production, it is highly desired develop an ideal catalyst, which can operate in a wide pH range. this work, we proposed amorphous RuSex nanoparticles (NPs) with disordered structure introduce abundant surface defects, contribute enhanced HER activity. The optimized RuSe1.5 NPs exhibited pH-universal activity, only require overpotential 24, 30, and 12 mV reach current density 10 mA cm–2 0.5 M H2SO4 (pH = 0), 1 PBS 7), KOH...
A high-power continuous-wave polycrystalline 1% Nd:Y3Al5O12 (Nd:YAG) ceramic rod laser was demonstrated. With 290 W/808 nm diode pumping, cw output of 72 W obtained at 1064 nm. The optical-to-optical conversion efficiency is 24.8%. Thermally induced birefringence properties Nd:YAG also investigated.
Visible photoluminescence has been observed in crystallized a-Si:H/a-SiNx:H multiquantum-well structures at room temperature. The MQW heterostructures consisting of 72 layers were formed by computer controlled plasma-enhanced chemical-vapor deposition method and then Ar+ laser annealing technique. crystallinity average grain size the silicon microcrystals determined means Raman x-ray diffraction spectroscopy. samples with well-layer thickness Ls=40 Å showed an intense which is peaked 2.1 eV...
Abstract The realization of ultra-low power Si-based resistive switching memory technology will be a milestone in the development next generation non-volatile memory. Here we show that high performance and random access (RRAM) based on an Al/a-SiN x :H/p + -Si structure can achieved by tuning Si dangling bond conduction paths. We reveal intrinsic relationship between bonds N/Si ratio for a-SiN :H films, which ensures programming current reduced to less than 1 μA increasing value x....
The unipolar resistive switches are investigated in silicon highly rich SiOx (x &lt; 0.75) films. as-deposited SiO0.73 films contain high concentration (1.0 × 1019 cm−3) of dangling bonds (Si-DBs) and SiO2≡Si–Si O3≡Si–Si configurations. Unlike the currently reported normal silicon-rich &gt; 1.8) based devices, our Pt/SiO0.73/Pt devices operate at lower voltage regime (&lt;2.0 V) exhibit much resistance (∼30 Ω). reset (∼0.7 is than set (∼1.7 performance reduced vacuum environment....
Organometal halide perovskite materials are outstanding candidates not only for solar cells but also photo-detection.
Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior Si nanocrystals (Si NCs) has not been fully understood so far. In present work, P-doped NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate surface states of NCs. Meanwhile, low temperature spectra indicate that some incorporated into NCs substitutionally impurities increase with concentration or annealing...