A5090981425- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Advanced Sensor and Energy Harvesting Materials
- Plasmonic and Surface Plasmon Research
- 2D Materials and Applications
- Silicon and Solar Cell Technologies
- Graphene research and applications
- Photonic and Optical Devices
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Advanced Materials and Mechanics
- Perovskite Materials and Applications
- Quantum Dots Synthesis And Properties
- solar cell performance optimization
- Neuroscience and Neural Engineering
- Metamaterials and Metasurfaces Applications
- Advanced biosensing and bioanalysis techniques
- CCD and CMOS Imaging Sensors
Nanjing University
2016-2025
Collaborative Innovation Center of Advanced Microstructures
2016-2025
National Laboratory of Solid State Microstructures
2016-2019
Nanjing Library
2015
Ningbo University of Technology
2015
École Polytechnique
2010-2012
Laboratoire de Physique des Interfaces et des Couches Minces
2010-2012
Centre National de la Recherche Scientifique
2010-2012
City University of Hong Kong
2009
Yangzhou University
2009
The combination of high-quality Al2 O3 dielectric and thiol chemistry passivation can effectively reduce the density interface traps Coulomb impurities, leading to a significant improvement mobility transition charge transport from insulating metallic regime. A record high 83 cm(2) V(-1) s(-1) (337 ) is reached at room temperature (low temperature) for monolayer WS2 . theoretical model electron also developed.
2D organic materials with in‐plane van der Waals forces among molecules have unique characteristics that ensure a brilliant future for multifunctional applications. Soluble semiconductors can be used to achieve low‐cost and high‐throughput manufacturing of electronic devices. However, achieving solution‐processed single‐crystalline uniform morphology remains substantial challenge. Here, the fabrication molecular single‐crystal precise layer definition by using floating‐coffee‐ring‐driven...
Inorganic CsPbX3 (X = Cl, Br, I, or hybrid among them) perovskite quantum dots (IPQDs) are promising building blocks for exploring high performance optoelectronic applications. In this work, the authors report a new structure that marries IPQDs to silicon nanowires (SiNWs) radial junction structures achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar-blind spectrum. A compact uniform deployment of upon sidewall low-reflective 3D junctions enables strong light field...
The ability to detect the full-Stokes polarization of light is vital for a variety applications that often require complex and bulky optical systems. Here, we report an on-chip polarimeter comprising four metasurface-integrated graphene-silicon photodetectors. geometric chirality anisotropy metasurfaces result in circular linear polarization-resolved photoresponses, from which parameters, including intensity, orientation, ellipticity arbitrarily polarized incident infrared (1550 nm), can be...
Toxic gas monitoring at room temperature (RT) is of great concern to public health and safety, where ultrathin silicon nanowires (SiNWs), with diameter <80 nm, are ideal one-dimensional candidates achieve high-performance field-effect sensing. However, a precise integration the tiny SiNWs as active sensor channels has not been possible except for use expensive inefficient electron beam lithography etching. In this work, we demonstrate an integratable fabrication sensors based on orderly SiNW...
SiC nanocrystals (NCs) exhibit unique surface chemistry and possess special properties. This provides the opportunity to design suitable structures by terminating dangling bonds with different atoms thereby boding well for practical applications. In this article, we report photoluminescence properties of 3C-SiC NCs in water suspensions pH values. Besides a blue band stemming from quantum confinement effect, show an additional at 510 nm when excitation wavelengths are longer than 350 nm. Its...
In this work, we report a strong photoluminescence (PL) enhancement of monolayer MoS2 under different treatments. We find that by simple ambient annealing treatment in the range 200 °C to 400 °C, PL emission can be greatly enhanced factor up two orders magnitude. This attributed factors: first, formation Mo-O bonds during exposure introduces an effective p-doping layer; second, localized electrons formed around related defective sites where effectively with higher binding energy resulting...
Quasi-1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large-area elastomers are advantageous candidates for developing various high-performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter <80 nm, can be precisely grown into desired locations via in-plane solid-liquid-solid (IPSLS) mechanism, reliably batch-transferred onto large area polydimethylsiloxane (PDMS) elastomers....
The ability to program highly modulated morphology upon silicon nanowires (SiNWs) has been fundamental explore new phononic and electronic functionalities. We here exploit a nanoscale locomotion of metal droplets demonstrate large readily controllable engineering crystalline SiNWs, from straight ones into continuous or discrete island-chains, at temperature <350 °C. This accomplished via tin (Sn) droplet mediated in-plane growth where amorphous Si thin film is consumed as precursor produce...
Line-shape engineering is a key strategy to endow extra stretchability 1D silicon nanowires (SiNWs) grown with self-assembly processes. We here demonstrate deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns the aid indium droplets that absorb amorphous Si precursor thin film produce ultralong c-Si NWs along programmed step edges. A reliable and faithful single run growth c-SiNWs over turning tracks different local curvatures has...
Flexible pressure sensors are the cornerstone of electronic skins with tactile function. However, flexible tend to have disadvantages slow response speed and large hysteresis, which caused mainly by viscoelasticity interfacial adhesion materials. In this letter, we adopted silicon nanowire (SiNW) arrays fabricate a sensor piezo-capacitance when SiNWs bending under pressure, avoided accompanying common The recorded unprecedented low hysteresis (~2.26%) an extremely short time (~3 ms). With...
Abstract Flexible near‐infrared (NIR) photodetectors (PDs) are desired for accurate heart rate monitoring, based directly on arterial‐blood‐volume‐change detection, instead of indirect oximetry technology. In this work, a robust 3D construction flexible a‐SiGe:H p ‐ i n radial junction (RJ) PDs is explored upon soft Al foils, working at NIR wavelength 800 nm, which has the highest skin transparency and least absorption difference from oxyhemoglobin deoxyhemoglobin variation. The RJ‐PDs...
Ultracompact and soft pairwise grippers, capable of swift large-amplitude multi-dimensional maneuvering, are widely needed for high-precision manipulation, assembly treatment microscale objects. In this work, we demonstrate the simplest construction such robotic structures, shaped via a single-nanowire-morphing powered by geometry-tailored Lorentz vectorial forces. This has been accomplished designable folding growth ultralong ultrathin silicon NWs into single nested omega-ring which can...
Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short is desirable to enhance driving current. Typically, the patterning of such delicate channels relies on high-precision lithography, which not applicable large area electronics. In this work, we demonstrate that ultrathin and can be created through local-curvature-modulated catalytic growth, where planar directed jump...
The growth and integration of position-controlled, morphology-programmable silicon nanowires (SiNWs), directly upon low-cost polymer substrates instead postgrowth transferring, is attractive for developing advanced flexible sensors logics. In this work, a low temperature SiNWs at only 200 °C has been demonstrated, the first time, polyimide (PI) films, via planar solid-liquid-solid (IPSLS) mechanism. with diameter ∼146 nm can be grown into precise locations on PI as orderly array preferred...
Abstract Gate-all-around field-effect transistors (GAA-FETs) represent the leading-edge channel architecture for constructing state-of-the-art high-performance FETs. Despite advantages offered by GAA configuration, its application to catalytic silicon nanowire (SiNW) channels, known facile low-temperature fabrication and high yield, has faced challenges primarily due issues with precise positioning alignment. In exploring this promising avenue, we employed an in-plane solid–liquid-solid...
ABSTRACT Flexible electronic devices with compliant mechanical deformability and electrical reliability have been a focal point of research over the past decade, particularly in fields wearable devices, brain–computer interfaces (BCIs), skins. These emerging applications impose stringent requirements on flexible sensors, necessitating not only their ability to withstand dynamic strains conform irregular surfaces but also ensure long‐term stable monitoring. To meet these demands,...
Abstract In this paper, the simulation, fabrication and characterization of high current density 1700V SiC MOSFETs with a hexagonal cell layout are reported. A novel MOSFET structure incorporating step-type implantation in both JFET region CSL (JC-MOS) is developed to address resistance issues . Through optimized conditions, remarkable decrease Ron 20.2% realized. An ultra-low 15mΩ Ron,sp 3.75mΩ·cm2 achieved which lowest reported values for 1700 V planar devices date. By reducing width from...
Memristors have garnered increasing attention in neuromorphic computing hardware due to their resistive switching characteristics. However, achieving uniformity across devices and further miniaturization for large-scale arrays remain critical challenges. In this study, we demonstrate the scalable production of highly uniform, quasi-one-dimensional diffusive memristors based on heavily doped n-type silicon nanowires (SiNWs) with diameters as small ∼50 nm, fabricated via in-plane...
We have produced glycerol-bonded 3C-SiC nanocrystal (NC) films, which when excited by photons of different wavelengths, produce strong and tunable violet to blue-green (360−540 nm) emission as a result the quantum confinement effects rendered NCs. The is so intense that spots are visible naked eyes. light very stable even after storing in air for more than six months, no intensity degradation can be observed. X-ray photoelectron spectroscopy absorption fine structure measurements indicate...
Abstract The radial junction (RJ) architecture has proven beneficial for the design of a new generation high performance thin film photovoltaics. We herein carry out comprehensive modeling light in-coupling, propagation and absorption profile within RJ cells based on an accurate set material properties extracted from spectroscopic ellipsometry measurements. This enabled us to understand evaluate impact varying several key parameters harvesting in radially formed solar cells. found that...