We have developed a technique which permits high-yield fabrication of microbridges and low noise YBa2Cu3O7 superconducting quantum interference devices (SQUIDs) in epitaxial thin films. These SQUIDs operate over wide temperature range extending from 4 K to close the transition temperature. Measurements an rf SQUID operating at 77 give peak-to-peak flux sensitivity 36 μV/Φ0 10 Hz 1.5× 10−4 Φ0/√Hz. Device yields 80% been obtained.

Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short is desirable to enhance driving current. Typically, the patterning of such delicate channels relies on high-precision lithography, which not applicable large area electronics. In this work, we demonstrate that ultrathin and can be created through local-curvature-modulated catalytic growth, where planar directed jump...

Real-time and precise evaluation of human body temperature offers crucial insights for health monitoring disease diagnosis, while integration high-performance miniaturized sensors remains a challenge. Inspired by the thermal sensory pathway skin, here we developed new route scalable fabrication rapid-response thermoreceptor using self-aligned in-plane silicon nanowire (SiNW) arrays as sensitive channels. These SiNW arrays, with diameter 100 ± 14 nm, were integrated into density 445...

A variety of techniques to reproducibly engineer microbridges in high-quality epitaxial YBCO films exist. report is presented on two such that have resulted high-yield processes for fabricating both DC and RF SQUIDs operating at temperatures as high 82 K. The results these devices (step-edge microbridges) focused-ion-beam are compared with those several other structures under investigation by researchers.

We report a systematic study of the superconducting and normal state properties reactively sputtered Nb/sub 0.62/Ti/sub 0.38/N thin films deposited on thermally oxidized Si wafers. The transition temperature (T/sub c/) was found to increase from 12 K for prepared unheated substrates over 16 maintained at 450/spl deg/C. A Nb buffer layer improve T/sub c/ by /spl sim/0.5 growths lower substrate temperatures. fabricated deg/C have an amply smooth surface (1.5/spl plusmn/0.25 nm root mean square...

We have developed a self-aligned Nb/Al-AlO/sub x//Nb junction anodization process that allows outside contacts and relaxed contact alignment. In this process, the junction, rather than contact, becomes minimum definable feature size. Junction size is limited only by resolution of lithography etch tools, which 0.65 /spl mu/m in our foundry. The significant increase circuit speed due to decrease critical current density without investment new fabrication tools. This requires one additional,...

Very low microwave losses have been measured in YBa/sub 2/Cu/sub 3/O/sub 7/ linear resonators, ring and bandpass filters. The stoichiometric 1-2-3 compound was deposited on LaAlO/sub 3/ substrates, patterned circuits, overcoated with a passivating layer. HTS (high T/sub c/ superconductor) microstrip resonators demonstrated Q values greater than 1200 at 10 GHz, corresponding to surface resistances less 300 mu Omega . Identical silver showed of 60 resistance 15 m high-frequency transition...

Reducing agents dramatically alter the specificity of competitive assays for antibody to hepatitis B core antigen (anti-HBc). A improvement was demonstrated with a new assay which utilizes microparticle membrane capture and chemiluminescence detection as well current radioimmunoassay procedure (Corab: Abbott Laboratories, Park, Ill.). The effect most noticeable elevated negative weakly reactive samples. In both systems, reductants increased separation population (n = 160) from cutoffs. With...

The low-frequency noise voltage fluctuations were measured on c-axis textured films of YBa/sub 2/Cu/sub 3/O/sub 7/

Measurements of SNS planar microbridges made from high-quality in situ sputtered YBCO films were made. The devices fabricated using single superconducting with a patterned gap bridged by sputter-deposited silver. A number exhibit supercurrents and microwave-induced steps the current-voltage characteristics. In best normal state resistance is consistent expected values. consequences anisotropy effects various fabrication techniques on device performance yield are discussed.

A robust radial junction (RJ) structure directly constructed upon the surface of a flexible Al foil substrate shows promising potential to boost wearable and portable applications, where silicon nanowire (SiNW) supported multilayer has proven beneficial in excellent mechanical stability sufficient light harvesting. Assigned backreflection contributed by foil, much larger current can be achieved than that on glass. While comprehensive understanding absorption under remains mainly unexplored....

We have fabricated YBCO 90/spl deg/ grain boundary junctions on step edges in NdGaO/sub 3/ and deposited dielectric (CeO/sub 2/ YSZ SrTiO/sub MgO) order to compare junction performance our standard, LaAlO/sub 3/. Average I/sub c/R/sub n/ values at 77 K the 300-400 /spl mu/V range were measured for 2 mu/m edge 3/, 3//MgO. Junction c/ is greatly reduced with CeO/sub 2//YSZ system. 65 4 junctions.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The measurement of a YBa/sub 2/Cu/sub 3/O/sub 7/ (YBCO) step-edge RF SQUID is discussed. technique permits high-yield fabrication high-temperature superconducting (HTS) SQUIDs in high-quality epitaxial YBCO films. A comparison made measurements at bias frequencies 27 MHz and 10 GHz, the latter using TE/sub 011/ copper cavity. Observed differences operation these two are largely attributable to configurations. GHz frequency may exceed r/2 pi L characteristic loop.

We have developed a 2" multilayer HTS integrated circuit process which contains up to three superconducting YBCO layers, epitaxial dielectric (SrTiO/sub 3/ or SrTiO/sub 3/+Sr/sub 2/AlTaO/sub 6/ combination), Ag wiring, an resistor and non-epitaxial Si/sub x/N/sub y/ dielectric. incorporated the use of n-factorial Taguchi designed experiments develop optimize various aspects this process. This article highlights addressed fabrication issues for crossovers, integrity, HTS/Ag metal contact resistance.

The authors describe the growth of HTS (high-temperature superconductor) bilayers (LaAlO/sub 3//YBa/sub 2/Cu/sub 3/O/sub 7/) and trilayers (YBa/sub 7//LaAlO/sub using off-axis RF sputtering from single stoichiometric targets. TEM (transmission electron microscope) examination shows that both LaAlO/sub 3/ YBa/sub 7/ films grow epitaxially upon preceding layer. interfaces between layers at substrates are sharp clean. It is found deposition subsequent does not degrade electrical properties...

The behavior of HTS thin films patterned into microbridge DC and RF SQUID structures irradiated with a rastered high-energy focused ion beam 70 mm in diameter is discussed. SQUIDs have demonstrated 51% modulation the critical current an applied magnetic field at 46 K. All devices appropriate currents exhibited Shapiro steps when exposed to microwave irradiation. Multiple interference patterns, probably from weak links within each segment, are seen 4 K disappear temperatures above liquid...

NbN films have been reactively sputter deposited from a 15.24 cm Nb target using variety of deposition conditions. Film penetration depth has measured Taber's parallel plate resonator technique. These measurements compared with obtained SQUID measurements. Penetration results also correlated film superconducting transition temperature, resistivity, resistance ratio, and x-ray diffraction patterns. The over substrates buffer layers including oxidized Si, sapphire, metal nitride "seed" layers.

High performance is a crucial factor in seeking more competitive levelized cost of electricity for the extensive popularization c-Si solar cells. Here, CsPbBr3 quantum dots (QDs) have been first applied as light-converting layer to enhance full-spectrum light response, resulting an ∼71% enhancement power conversion efficiency within silicon-based Remarkably, even if photon energy smaller than bandgap QDs, long-wavelength external shows significant increase. Such surprising results can be...

A Schottky barrier tunneling field-effect transistor (SBT FET) built upon catalytically grown ultrathin silicon nanowires (SiNWs) offers a preferable low-temperature routine to construct top device layers for monolithic three-dimensional (3D) integration technology, but there still remain several peculiar electronic transport behaviors that need be better understood. In this work, high-performance SBT FET was fabricated based on orderly SiNWs via the in-plane solid–liquid–solid (IPSLSL)...

Semitransparent thin-film solar cells, especially those fabricated directly on building materials, have attracted much interest in the continuously increasing demands of building-integrated photovoltaic (BIPV) applications. Herein, radial junction (RJ)-structured hydrogenated amorphous silicon (a-Si:H) constructed upon nanowires (SiNWs) grown by a vapor–liquid–solid (VLS) process rough surface tinplate substrates, been successfully demonstrated. After optimizing SiNW density, an efficiency...

High performance and robustness are the key factors to boosting wearable portable applications. Although 1D crystal structure makes Sb

Superconducting Ba/sub 1-x/K/sub x/BiO/sub 3/ thin films with T/sub c/ (R=0) as high 29.2 K have been grown using off-axis RF magnetron sputtering. Films are routinely deposited zero resistance between 25 and 29 K. High pressure during deposition is considered to be responsible for higher-T/sub films. The grow epitaxially