A5050471171- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and interfaces
- Environmental remediation with nanomaterials
- Advancements in Battery Materials
- Nanomaterials for catalytic reactions
- ZnO doping and properties
- Conducting polymers and applications
- GaN-based semiconductor devices and materials
- GABA and Rice Research
- Extraction and Separation Processes
- Plant tissue culture and regeneration
- Metal and Thin Film Mechanics
- Near-Field Optical Microscopy
- Micro and Nano Robotics
- Metallurgical Processes and Thermodynamics
- Cyclone Separators and Fluid Dynamics
- Nanomaterials and Printing Technologies
- Organic Light-Emitting Diodes Research
- Luminescence and Fluorescent Materials
- Advanced Materials and Mechanics
- TiO2 Photocatalysis and Solar Cells
Collaborative Innovation Center of Advanced Microstructures
2021-2024
Nanjing University
2021-2024
National Laboratory of Solid State Microstructures
2023
Hunan University
2016-2017
Portland State University
2013
University of Science and Technology Beijing
2006-2007
Peking University
1998-2004
We report large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method. Silica was produced in the form amorphous at a diameter ∼15 nm and length up to hundreds micrometers. The SiONWs emit stable high brightness blue light energies 2.65 3.0 eV. intensity emission is two orders magnitude higher than that porous silicon. may have potential applications high-resolution optical heads scanning near-field microscope or nanointerconnections future integrated devices.
We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach. High purity SiNWs uniform diameters around 15 nm were obtained by sublimating hot-pressed powder target at 1200 °C in flowing carrier gas environment. The emit stable blue light which seems unrelated to quantum confinement, related an amorphous overcoating layer oxide. Our approach can be used, principle, as general method for other one-dimensional semiconducting, or conducting nanowires.
Quasi-1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large-area elastomers are advantageous candidates for developing various high-performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter <80 nm, can be precisely grown into desired locations via in-plane solid-liquid-solid (IPSLS) mechanism, reliably batch-transferred onto large area polydimethylsiloxane (PDMS) elastomers....
The recent success of bulk synthesis pure nanoscale silicon quantum wires (SiQW's) enables us to evaluate their photoluminescence (PL) characteristics under ultraviolet photoexcitation. Intensive multiple light emissions ranging from dark red blue regions were revealed for as-grown and partially oxidized SiQW samples. emission was ascribed a confinement effect originating the crystalline core SiQW's that is closely mediated by interface. However, PL green found be definitely unrelated...
Abstract Fabricating ultrathin silicon (Si) channels down to critical dimension (CD) <10 nm, a key capability implementing cutting‐edge microelectronics and quantum charge‐qubits, has never been accomplished via an extremely low‐cost catalytic growth. In this work, 3D stacked Si nanowires (SiNWs) are demonstrated, with width height of W nw = 9.9 ± 1.2 nm (down 8 nm) H 18.8 1.8 that can be reliably grown into the ultrafine sidewall grooves, approaching CD 10 technology node, thanks new...
Abstract Stretchable electronics are finding widespread applications in bio‐sensing, skin‐mimetic electronics, and flexible displays, where high‐density integration of elastic durable interconnections is a key capability. Instead forming randomly crossed nanowire (NW) network, here, large‐scale precise highly conductive nickel silicide nanospring (SiNi x ‐NS) arrays demonstrated, which fabricated out an in‐plane solid–liquid–solid guided growth planar Si nanowires (SiNWs), subsequent...
Selective hydrogenations of alkynes are a class essential reactions in organic synthesis chemistry. Particularly, the selective hydrogenation acetylene to ethylene is key step production polymers. Here we have successfully performed N,N-dimethylformamide by iron-based nanoparticles, especially Pd–Fe bimetallic NPs. NaBH4 as hydrogen source can significantly increase catalytic performances nanocatalysts for hydrogenation. More importantly, reaction carried out at exceptionally mild...
Abstract Inorganic semiconductor nanowires, known for their exceptional electronic properties and mechanical flexibility, are widely regarded as the ideal 1D channel materials creating high‐performance flexible electronics. In this work, integration of ordered arrays silicon nanowire (SiNW) field effect transistors (FETs) directly onto plastic substrates is showcased. The self‐aligned crystalline SiNW multi‐channels first grown through an in‐plane solid–liquid–solid mechanism on rigid...
Complementary doping control in silicon nanowire (SiNW) channels is crucial for the construction of high-performance CMOS logics.
A low temperature catalytic growth of orderly ultrathin silicon nanowires (SiNWs) is desirable for the construction monolithic 3D stacked electronics but usually suffers a large diameter fluctuation and deployment rate (GDR). In this work, ultra-confined dynamics in-plane solid–liquid–solid SiNWs within narrow groove tracks has been systematically investigated, converging-guiding-track strategy proposed testified to accomplish 100% GDR ultra-dense uniform SiNW array, with spacing only Dnw =...
Abstract Flexible and transparent conductive (FTC) thin films are indispensable elements in building high‐performance flexible or soft electronics displays. Slim inorganic nanowires (NWs), with excellent conductivity durability, ideal one‐dimensional ingredients to weave a quasi‐continuous FTC network. However, precise spatial arrangement of these ultrathin NWs, form an optimal interconnected network, represents still difficult challenge. In this work, catalytic growth orderly SiNW arrays,...
Catalytic growth of silicon nanowires (SiNWs), mediated by metallic droplet, provide ideal quasi-1D channels to construct high performance field effect transistor (FET). However, the incorporation catalytic metal atoms into SiNWs has significant impact on FET characteristics, and thus needs be better understood controlled fulfil its potential for electronics. In this work, we focus indium (In) planar SiNWs, grown via an in-plane solid-liquid-solid (IPSLS) mechanism, device performance. It is...
Reconfigurable field effect transistors (R-FETs) that can dynamically reconfigure the transistor polarity, from n-type to p-type channel or vice versa, represent a promising new approach reduce logic complexity and granularity of programmable electronics. Though R-FETs have been successfully demonstrated upon silicon nanowire (SiNW) channels, pair extra program gates are still needed control source/drain (S/D) contacts. In this work, we propose rather simple single-gated R-FET structure with...
Stretching elastomer bands to accumulate strain energy, for a sudden projectile launching, has been an old hunting skill that will continue find new applications in miniaturized worlds. In this work, we explore the use of highly resilient and geometry-tailored ultrathin crystalline silicon nanowires (SiNWs) as elastic medium fabricate first, smallest, mechanical slingshot. These NW-morphed slingshots were first grown on planar surface, with desired layout, then mounted upon standing pillar...
Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – 8, 2013.