A5103103893- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Quantum and electron transport phenomena
- Neural Networks and Applications
- Electronic and Structural Properties of Oxides
- Industrial Technology and Control Systems
- Advanced Control Systems Optimization
Nanjing University
2005-2025
Ministry of Education of the People's Republic of China
2020
Collaborative Innovation Center of Advanced Microstructures
2019
Abstract Gate-all-around field-effect transistors (GAA-FETs) represent the leading-edge channel architecture for constructing state-of-the-art high-performance FETs. Despite advantages offered by GAA configuration, its application to catalytic silicon nanowire (SiNW) channels, known facile low-temperature fabrication and high yield, has faced challenges primarily due issues with precise positioning alignment. In exploring this promising avenue, we employed an in-plane solid–liquid-solid...
The a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on p-type Si substrates. nc-Si layer thickness 5nm is from hydrogen-diluted silane gas by the layer-by-layer technique. thicknesses of tunnel and control SiNx layers 3nm 20nm, respectively. Frequency-dependent capacitance spectroscopy used to study electron tunnelling storage structures. Distinct...
This paper investigates a triple-gate single electron FET memory with Si quantum dot floating gate and wire channel by establishing numerical model of two-dimensional Schrdinger Poisson equations. The concentration in the silicon different scales is investigated under conditions that diverse voltage programming are applied finite element solution. influence confinement effect distribution nano-scale on structure also investigated. Results simulation show that, threshold increases when size...
Structures of nanocrystalline-Si (nc-Si) sandwiched between two asymmetric ultrathin SiO2 layers were fabricated. The nc-Si (dot density 1011 cm−2) was formed by decomposition hydrogen-diluted silane and the (about 2 nm) prepared plasma oxidation at a lower temperature (250 degrees C). whole fabrication processes completed in situ plasma-enhanced chemical vapour deposition system. By using capacitance–voltage (C–V) conductance–voltage (G–V) spectroscopy, we studied electronic properties...
The silicon dioxide (SiO2) film was fabricated from layer-by-layer depositing amorphous (a-Si) combined with step-by-step plasma oxidation in the plasma-enhanced chemical vapor deposition (PECVD) system. capacitance-voltage(C-V) and conductance-voltage(G-V) characteristics show that fixed charge interface state densities of SiO2 are 9×1011 cm-2 2×1011 cm-2·eV-1, respectively. Furthermore, breakdown field strength is as high 4.6 MV/cm, which comparable to formed by hot oxidation. prepared...
This paper focuses on the problem of adaptive multi-dimensional Taylor network control (adaptive MTN) for cement calciner outlet temperature. Firstly, we establish a mathematical model system, and structure is designed as multi-input single-output data-driven form with time-delay. Secondly, cross-correlation method recursive least squares are used to identify parameters. Thirdly, based gradient descent method, MTN controller implement online update weights. Finally, experiment results given...
An a-SiNx/nanocrystalline silicon [(nc-Si)/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition (PECVD) system at low temperature (250° C). The nc-Si layer from hydrogen-diluted silane mixture gas by using layer-by-layer technique. Atom force microscopy measurement shows that the density of about 2 × 1011 cm−2. By pretreatment nitridation, interface states and high-quality between Si substrate a-SiNx insulator are obtained. state midgap calculated to be...
Doubly stacked layers of amorphous silicon (a-Si) between nitride (a-SiNx) have been fabricated by plasma enhanced chemical vapor deposition (PECVD)technique. Si nanocrystal (nc-Si) were formed thermal crystallization a-Si after a furnace annealing at 1100℃ for 30 min in N2 ambient. The phenomena charge trapping and storage nc-Si observed both capacitance-voltage (C-V) current-voltage (I-V) measurements room temperature. structure has revealed double-level charging process. Two stages...