A5076913086- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Phase-change materials and chalcogenides
- Graphene research and applications
- Topological Materials and Phenomena
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Electronic and Structural Properties of Oxides
- Photonic and Optical Devices
- Boron and Carbon Nanomaterials Research
- Quantum Dots Synthesis And Properties
- Photoreceptor and optogenetics research
- Transition Metal Oxide Nanomaterials
- Nonlinear Optical Materials Studies
- Magnetic and transport properties of perovskites and related materials
- Iterative Learning Control Systems
- Quantum and electron transport phenomena
- Liquid Crystal Research Advancements
- Neuroscience and Neural Engineering
- Semiconductor materials and interfaces
- Gas Sensing Nanomaterials and Sensors
- Copper-based nanomaterials and applications
- Semiconductor Quantum Structures and Devices
- Neural Networks and Reservoir Computing
Wuhan University of Science and Technology
2024-2025
Wuhan University of Technology
2016-2025
Simon Fraser University
2020-2021
Wuhan National Laboratory for Optoelectronics
2013-2015
Huazhong University of Science and Technology
2013-2015
University of North Carolina at Chapel Hill
1989
Multifunctional neuromorphic devices to tackle complex tasks are highly desirable for the development of artificial neural networks. Threshold switching (TS) memory, which exhibits volatile abrupt resistance change under external electric fields, is capable emulating multiple biological behaviors because its rich temporal dynamics. Here, a TS device based on two-dimensional (2D) SnSe demonstrated. Owing diffusive dynamics Ag ions in SnSe, intrinsic stochasticity behavior observed, can be...
The 8-<italic>Pmmn</italic> borophene is predicted to be a hard but also flexible 2D material.
Memristive switching devices with electrically and optically invoked synaptic behaviors show great promise in constructing an artificial biological visual system. Through rational design integration, 2D materials their van der Waals (vdW) heterostructures can be applied to realize multifunctional optoelectronic devices. Here, a memtransistor based on SnSe/MoS2 vdW p-n heterojunction simulate the human system is reported. By employing simple mild UV-ozone treatment, device exhibits reversible...
Recently, atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) have attracted great interest in electronic and opto-electronic devices for high-integration-density applications such as data storage due to their small vertical dimension high capability. Here, we report a memristor based on free-standing multilayer molybdenum disulfide (MoS2) with current on/off ratio of ∼103 stable retention at least 3000 s. Through light modulation the carrier density suspended MoS2...
The metal-to-insulator transition (MIT) in niobium oxide (NbO2) regulated by oxygen vacancies (VOs) is of limited understanding. Here, we systematically investigate the reversible VOs-MIT, focusing on structural, polaron, electronic, and chemical bonding characteristics. Interestingly, VOs modulate Nb–Nb dimers renormalize charges small polarons. strongly perturb high-symmetry metal phase split d∥ orbitals while only broadening local insulating phase. Driven cooperative Mott–Peierls...
The work function (WF) is of crucial importance to dominate the carrier transport properties Ge-Sb-Te based interfaces. In this letter, electrostatic force microscopy proposed extract WF Ge2Sb2Te5 (GST) films with high spatial and energy resolution. measured as-deposited amorphous GST 5.34 eV decreases drastically after crystallized by annealing or laser illumination. A 512 × array 2D-WF map designed study distribution shows a good consistency. contrast between a-GST c-GST ascribed band...
We demonstrate the impacts of Ag doping on local atomic structure amorphous GeTe phase-change material. The variations phonon vibrational modes, boding nature, and are shown by Raman, X-ray photoelectron spectroscopy, ab initio calculation. Combining experiments simulations, we observe that number Ge atoms in octahedral site decreases tetrahedral increases. This modification order originating from low valence element will affect crystallization behavior GeTe, which is verified differential...
We demonstrate the drastic effect of film thickness on local order Ge sites in amorphous GeTe ultrathin films by Surface Enhanced Raman Scattering study. The relative intensity two prominent peaks around 125 cm−1 and 160 changes greatly as a function from 100 nm to 3 nm. suggest that this change originates variation fraction atoms tetrahedral- defective octahedral-like sites. Ab initio Molecular Dynamics simulations show more are tetrahedrally coordinated. result is consistent with...
We report the drastic effect of film thickness on structure and corresponding phonon behavior crystalline GeTe ultrathin film. with at ∼5 nm still shows good crystallization this highly scaled dimension confined almost all crystallites to have preferred [111] orientation. The large specific interface area in give rise increase tetrahedral coordinated Ge atoms a rising Raman mode low frequency is observed. These findings implications for thermal electrical characters phase change films thus...
Opposite to the almost persistent p-type conductivity of crystalline chalcogenides along GeTe-Sb2Te3 tie line, n-type Hall mobility is observed in GeTe/Sb2Te3 superlattice-like material (SLL) with a short period length. We suggest that this unusual carrier characteristic originates from structural disorder introduced by lattice strain and dangling bonds at SLL interfaces, which makes SLLs behave like amorphous chalcogenides. Detailed has been studied Raman scattering, X-ray photoelectron...
Phase-change materials, the highly promising candidate for nonvolatile data recording, present a different phase-change property when film thickness shrinks to very deep submicron scale. The local structure of amorphous GeTe ultrathin films, which contributes characteristics phase change, is examined using X-ray absorption measurements. Ge atoms are found be low-coordinated decreases. linked neighbor by covalent bond, and weaker Ge–Te bonds more easily broken, suggests that located in...
Epitaxial Ge films have been grown on Ge(111) and GaAs(111) surfaces using remote plasma enhanced chemical vapor deposition. Prior to growth, all substrates were subjected an in situ hydrogen treatment remove surface oxides. The effect of deposition temperature the epitaxial quality has studied reflection high-energy electron diffraction, Rutherford backscattering/channeling spectrometry, transmission microscopy. Reflection diffraction patterns show fundamental streaks deposited layers...
The artificial nociceptor is a device that simulates the biological nociception system, which has wide range of applications in fields medicine, rehabilitation, and robotics. Multimodal nociceptors can respond to diverse stimuli, including visual, mechanical, thermal, so on, then convert them into neural signals for processing by brain. Herein, back‐gate optoelectronic transistor based on 2D InSe/MoS 2 heterostructure demonstrated. By employing energy band alignment heterojunction, exhibits...
We constructed the GeSe/SnTe van der Waals (vdW) two-dimensional (2D) heterostructure with use of first-principles calculation, which has a 0.481 eV indirect bandgap and type-II band alignment. The superior wide range light absorption maximum value 8.69 × 10 5 cm −1 , also exhibits anisotropic carrier mobilities 8.36 3 2 V s . By strain engineering, structure is able to be modulated effectively. Moreover, by applying biaxial strain, we can greatly enhance photoelectric conversion efficiency...