A5100607862- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Advanced Memory and Neural Computing
- Magnetic Properties and Applications
- Magnetic properties of thin films
- Nanocluster Synthesis and Applications
- Magnetic Properties of Alloys
- Graphene research and applications
- Ferroelectric and Negative Capacitance Devices
- Molecular Junctions and Nanostructures
- Gas Sensing Nanomaterials and Sensors
- Quantum and electron transport phenomena
- ZnO doping and properties
- Glass properties and applications
- Liquid Crystal Research Advancements
- Semiconductor materials and devices
- Advanced Thermoelectric Materials and Devices
- Neural Networks and Reservoir Computing
- Advanced Photocatalysis Techniques
- Copper-based nanomaterials and applications
- Machine Learning and ELM
- Metamaterials and Metasurfaces Applications
- Diamond and Carbon-based Materials Research
- Boron and Carbon Nanomaterials Research
Huazhong University of Science and Technology
2012-2025
Wuhan National Laboratory for Optoelectronics
2011-2024
Beijing Jiaotong University
2023
Polytechnic University of Turin
2023
Shanghai Jiao Tong University
2023
Xidian University
2023
Texas A&M University
2023
University of Toronto
2023
United States Government Accountability Office
2023
Florida Institute of Technology
2023
Atomically thin hexagonal boron nitride (h-BN) is often regarded as an elastic film that impermeable to gases. The high stabilities in thermal and chemical properties allow h-BN serve a gas barrier under extreme conditions. Here, we demonstrate the isolation of hydrogen bubbles via plasma treatment. Detailed characterizations reveal substrates do not show change after are found withstand treatment air, even at 800 °C. Scanning transmission electron microscopy investigation shows multilayer...
A new strategy for narrowing the size distribution of colloidal quantum dots (QDs) was developed by combining cation exchange and quantized Ostwald ripening. Medium-sized reactant CdS(e) QDs were subjected to form target PbS(e) QDs, then small added which converted via exchange. The small-sized ensemble dissolved completely rapidly released a large amount monomers, promoting growth size-focusing medium-sized QDs. addition can be repeated continuously reduce distribution. method applied...
Hydrophilic CuInS<sub>2</sub> and CuInS<sub>2</sub>–ZnS colloidal quantum dots were directly synthesized using <italic>in situ</italic> generated H<sub>2</sub>S as the sulphur source DMF solvent. Short chain thiols applied capping ligands, reactivity controlling agents sources for growth of ZnS shell.
Abstract This study investigates the ferroelectric (FE) performance of [HfO 2 /ZrO ] 6 superlattice FE capacitors using different top electrodes (TE). The unidirectional rapid thermal annealing (RTA) process from 450 to 600 °C is conducted. device's remanent polarization ( P r ) improved with TE hardness, and maintained harder at lower temperature. Furthermore, superlattice's endurance recovery feature improve TE. increased orthorhombic phase (o‐phase) content decreased tetragonal (t‐phase)...
Resonant bonding has been appreciated as an important feature in some chalcogenides. The establishment of resonant can significantly delocalize the electrons and shrink band gap, leading to low electrical resistivity soft optical phonons. Many materials that exhibit this mechanism have applications phase-change memory thermoelectric devices. be tuned by various means, including thermal excitations changes composition. In work, we manipulate it applying large hydrostatic-like pressure....
In this present work, we investigate the electronic transport properties of phosphorus-doped armchair graphene nanoribbon (AGNR) junctions by employing nonequilibrium Green's functions in combination with density-function theory. Two phosphorus (P) atoms are considered to substitute central carbon atom different width AGNRs. The results indicate that behaviors strongly dependent on P-doped nanoribbons. current-voltage characteristics doped AGNR reveal an interesting negative differential...
Based on nonequilibrium Green's functions in combination with density-functions theory, the transport properties of armchair graphene nanoribbon (AGNR) devices were investigated, which one lead is undoped nanoribbons, and other phosphorus (P)-doped nanoribbons. The results manifest that there rectification behavior large rectifying ratio AGNR characteristics can be modulated by changing width On contrary, for same position P dopant has little or no effect I-V characteristics.
We report on the synthesis of semiconductor PbS colloidal quantum dots with good size distribution through a facile and rapid approach using in situ generated H2S as sulfur source. This novel is easily reproducible less energy consuming. It also has advantages low-input high-output. The growth should be controlled 50–60 minutes to allow rod-like CQDs lengths about 25–30 nm widths 3–5 obtained. dodecylamine (DDA) speculated play crucial role morphology products. Ligand exchange performed...
Zinc oxide (ZnO) nanopolycrystalline films were successfully prepared by the modified successive ionic layer adsorption and reaction technique, which was based on alternate immersion of substrate in alkaline zinc precursor deionized water. ZnO formed through an accumulation crystal clusters. The size clusters ranged from 200 to 500 nm scanning electron micrographic images. Prepared exhibited a wurtzite structure, with good microstructure, surface morphology, optical properties. Ethanolamine...
In the era of big data, amount global data is increasing exponentially, and storage processing massive put forward higher requirements for memory. To deal with this challenge, high-density memory neuromorphic computing have been widely investigated. Here, a gradient-doped multilayer phase-change two-level states, four-level linear conductance evolution using different pulse operations proposed. The mechanism multilevel states revealed through high-resolution transmission electron microscopy...
Surface oxidation substantially affects the optical properties of nanocrystals. Primary eliminates surface dangling bonds and leads to PL enhancement, while it does not affect nanocrystal size. However, further results in reduction PL.
Phase-change materials, the highly promising candidate for nonvolatile data recording, present a different phase-change property when film thickness shrinks to very deep submicron scale. The local structure of amorphous GeTe ultrathin films, which contributes characteristics phase change, is examined using X-ray absorption measurements. Ge atoms are found be low-coordinated decreases. linked neighbor by covalent bond, and weaker Ge–Te bonds more easily broken, suggests that located in...
All investigated (PbS)<sub>n</sub> and (PbSe)<sub>n</sub> nanocluster-based molecular junctions show metallic behavior at low biases (−2 V, 2 V) while negative differential resistance (NDR) appears a certain high bias range.
Spin transfer torque magnetic random access memory (STT-MRAM )[1-3] is a new type of that directly reversing the moment nano-magnet by spin-polarized current to realize data storage. In this paper, information storage mechanism STT-MRAM and precession reversal in free layer tunnel junction (MTJ) were studied simulated based on LLGS equation[4, 5]. As showed simulation results, time needed reverse moment, density moment's motion track are affected saturation magnetization, thickness, shape...
The amorphous TbFeCo films covered with the protective AlN have been prepared by rf magnetron sputtering system. It is found that not only protect rare earth elements from oxidation and enhance magneto-optical Kerr effect but also affect magnetic properties of earth-transition metal films. coercivity Hc perpendicular anisotropy energy constants K'u1 Ku2 are changed thickness can be explained according to stress mechanism model single ion anisotropy.
In article number 1800127, Ming Xu, Xiangshui Miao, and co-workers synthesize a phase-change memory material with small density contrast by alloying carbon into Ge–Sb compounds. The difference between crystal glass of this reduces from 6% to 3% because slightly increases the packing efficiency glass. new is promising be used in durable high-density devices.