A5046692337- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Ion-surface interactions and analysis
- Fusion materials and technologies
- Nuclear Materials and Properties
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Microstructure and mechanical properties
- Intermetallics and Advanced Alloy Properties
- High Temperature Alloys and Creep
- nanoparticles nucleation surface interactions
- Advanced Surface Polishing Techniques
- Surface and Thin Film Phenomena
- Nuclear reactor physics and engineering
- Metallurgy and Material Forming
- Calcium Carbonate Crystallization and Inhibition
- Silicon Carbide Semiconductor Technologies
- Advanced Materials Characterization Techniques
- Silicon Nanostructures and Photoluminescence
- Advanced Chemical Physics Studies
- Metallurgical Processes and Thermodynamics
- Material Dynamics and Properties
- Solidification and crystal growth phenomena
Universidad Católica San Antonio de Murcia
2016-2023
Synopsys (United States)
2006-2018
IMDEA Materials
2011-2017
Madrid Institute for Advanced Studies
2012-2015
GlobalFoundries (Singapore)
2015
CEA LETI
2015
Centre d’Élaboration de Matériaux et d’Études Structurales
2015
Centre National de la Recherche Scientifique
2015
CEA Grenoble
2015
Foundation for the Research Development and Application of Composite Materials
2015
Carbon often appears in Si concentrations above its solubility. In this article, we propose a comprehensive model that, taking diffusion and clustering into account, is able to reproduce variety of experimental results. Simulations have been performed by implementing Monte-Carlo atomistic simulator. The initial path for included the consistent with observations regarding formation dissolution substitutional C–interstitial C pairs (Cs–Ci). addition, carbon profiles at 850 900 °C carbon-doping...
An atomistic model to account for the formation of facets during solid phase epitaxy regrowth (SPER) is shown. This relies on a lattice kinetic Monte Carlo approach. The atoms produce different crystalline planes growing with planar velocities. In particular, explains arrow tip SPER thin silicon fins typical fin field effect transistors and trenches in rectangular-shaped amorphized regions (001) (011) silicon, caused by distortion shear strain propagated (111) facets.
We study the influence of grain boundaries (GBs) on radiation-induced vacancies, as well hydrogen (H) behavior in tungsten (W) samples with different sizes temperature range from 300 K to 573 K, both experimentally and by computer simulations. For this purpose, coarse-grained nanostructured W were sequentially irradiated carbon (C) H ions at energies 665 keV 170 keV, respectively. A first set implanted was annealed 473 a second K. Object kinetic Monte Carlo simulations performed account for...
A comprehensive atomistic model for arsenic in silicon which includes charge effects and is consistent with first-principles calculations arsenic-vacancy cluster energies has been developed. Emphasis put reproducing the electrical deactivation annealed profiles preamorphized silicon. The simulations performed an kinetic Monte Carlo simulator suggest a predominant role of mobile interstitial experiments provide good understanding behavior during annealing.
This work studies the intriguing experimental observations that Si(111) solid phase epitaxial regrowth velocity is not constant as recrystallization progresses, but has a sudden change after of ≈100 nm and progresses faster afterward.[L. Csepregi, J. W. Mayer, T. Sigmon, Appl. Phys. Lett. 29(2), 92 (1976)] These two modes have important implications in quality recrystallized silicon. The first produces flat advancing front leaving heavy dense network small parallel to surface twins behind,...
Abstract In this paper, we report on an enhanced hydrogen permeation effect along grain boundaries in tungsten. Sputtered nanocolumnar tungsten layers (column lateral dimensions 100–150 nm and layer thickness 2 μm) were analysed by measurements the temperature range 520–705 K. The experiments constitute a direct observation of effect, previously postulated means combination indirect simulations considered controversial due to lack measurements. DFT results support since (i) binding energy...
An accurate physically based Fermi-level modeling approach, amenable to be implemented in an atomistic process simulator, is reported. The kinetic Monte Carlo method used for point and extended defects, conjunction with a quasiatomistic, continuum approach treatment carrier densities. model implements charge reactions electric bias according the local Fermi level, pairing break-up between particles, clustering-related dopant deactivation, Fermi-level-dependent solubility. We derive...
The solid phase epitaxial growth process has been studied at 330 °C by transmission electron microscopy for Ge wafers polished 10°–15° increments from the [001] to [011] orientations. velocity showed a strong dependence on substrate orientation with direction displaying 16 times greater than [111] direction. A lattice kinetic Monte Carlo model was used simulate (SPEG) rates different orientations, and simulations compared well experimental results. Cross sectional plan view revealed stacking...
A lattice kinetic Monte Carlo model for defect generation during solid phase epitaxial regrowth (SPER) is presented. It assumes two simple causes defective Si formation: amorphous atoms in local {111} configurations having a probability to become and random nucleation growth creating alternative crystalline seeds. Simulations are compared with experimental results (001) (011) substrates different topologies aligned ⟨100⟩ ⟨110⟩ axes, showing the accuracy validating its assumptions....
The thermostructural properties of Ni-Cr materials, as bulk and nanoparticle (NP) systems, have been predicted with a newly developed interatomic potential, for Ni/Cr ratios from 100/0 to 60/40. which has fitted using experimental data further validated Density Functional Theory (DFT), describes correctly the variation temperature lattice parameters coefficient thermal expansion, 100 K 1000 K. Using this we performed Molecular Dynamics (MD) simulations on alloys various compositions, no are...
An atomistic Monte Carlo code to simulate the deposition and annealing of three-dimensional polycrystalline thin films is presented. Atoms impinge on substrate with selected angular distributions, grains are nucleated different crystalline orientations, defined by tilt rotation angles. Grain boundaries appear naturally when islands coalesce, can migrate during both simulations. In this work we present simulations aluminum films. We examine influence temperature, rate, adhesion morphology The...