A5081770274- Copper Interconnects and Reliability
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Electrodeposition and Electroless Coatings
- Electronic Packaging and Soldering Technologies
- Molecular Junctions and Nanostructures
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Anodic Oxide Films and Nanostructures
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced ceramic materials synthesis
- Ferroelectric and Negative Capacitance Devices
- Synthesis and properties of polymers
- Advanced Surface Polishing Techniques
- 3D IC and TSV technologies
- Electrocatalysts for Energy Conversion
- Nanoporous metals and alloys
- Silicone and Siloxane Chemistry
- GaN-based semiconductor devices and materials
- Electrical and Thermal Properties of Materials
- Ga2O3 and related materials
- Adsorption, diffusion, and thermodynamic properties of materials
- Polymer Surface Interaction Studies
- Aluminum Alloys Composites Properties
- Intermetallics and Advanced Alloy Properties
National Chi Nan University
2015-2024
South China Normal University
2024
National Formosa University
2020
National Yunlin University of Science and Technology
2008
National University of Tainan
2005-2007
National Chiayi University
2007
Taiwan Semiconductor Manufacturing Company (Taiwan)
2001-2006
National Yang Ming Chiao Tung University
2000-2004
Taiwan Semiconductor Manufacturing Company (United States)
2001-2003
Shanghai Institute of Microsystem and Information Technology
1988
Abstract Ethylene solubility in low‐density polyethylene has been measured using the piezoelectric sorption method from 0 to 69 atm at 126, 140, and 155°C. The data indicate lower ethylene a given temperature pressure than previously published extrapolation of infinite‐dilution results. are interpreted Flory–Huggins solution theory.
The effect of copper (Cu) barrier film deposition process on the Cu interconnects was investigated, including waiting time between chemical mechanical polishing and dielectric deposition, preheating time, ammonia (NH3) plasma treatment prior to various types dielectric. Effective surface ensures superior conductivity enhances adhesion film, causing a longer electromigration failure time. However, excessive thermal (preheating, treatment, time) induces hillock defect. Furthermore, silicon...
Amine-terminated self-assembled monolayers are molecular nanolayers, typically formed via wet-chemical solution on specific substrates for precision surface engineering or interface modification. However, homogeneous assembling of a highly ordered monolayer by the facile, wet method is rather tricky because it involves process parameters, such as solvent type, concentration, soaking time and temperature, humidity level. Here, we select 3-aminopropyltrimethoxysilane (APTMS) model molecule...
The surface state, electrical, and reliability characteristics of copper (Cu) interconnects after ammonia (NH 3 ) or hydrogen (H 2 plasma treatment were investigated in this study. experimental results show that H has excellent Cu oxide removal efficiency, less impact on the formation hillocks, damage low-dielectric constant (low- k dielectrics comparison to NH treatment. However, a higher leakage current between lines shorter electromigration (EM) failure time due weaker adhesion strength...
Ruthenium (Ru) and ruthenium nitride (RuN) thin films have been investigated as candidates for barrier layers in copper (Cu) damascene processes. In order to study the thermal stability of Ru RuN films, as-deposited were annealed by rapid annealing (RTA), film resistance was real-time measured a four-point probe, which embedded RTA tool. The X-ray diffraction data show that grain size decreased with increase nitrogen (N) content. phases gradually changed phases, resistivity time due...
The physical, electrical, and reliability characteristics of various Copper (Cu) barrier films, including SiC, SiCN, SiCO, SiCNO, SiN, were investigated. experimental results indicate that the SiN film is best against Cu diffusion, adheres strongly to film, exhibits reliable electromigration (EM) performance, but its dielectric constant too high. Nitrogen-doped or oxygen-doped silicon carbide films (SiCN SiCO) have a lower constant, at cost reduced reliability. SiCNO doped with both nitrogen...
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTSorption of Solutes by Poly(ethylene oxide) Using Gas-Liquid ChromatographyY. L. Cheng and D. C. BonnerCite this: Macromolecules 1974, 7, 5, 687–690Publication Date (Print):September 1, 1974Publication History Published online1 May 2002Published inissue 1 September 1974https://pubs.acs.org/doi/10.1021/ma60041a027https://doi.org/10.1021/ma60041a027research-articleACS PublicationsRequest reuse permissionsArticle Views40Altmetric-Citations16LEARN...