A5084552941- Copper Interconnects and Reliability
- Semiconductor materials and devices
- Electrodeposition and Electroless Coatings
- Molecular Junctions and Nanostructures
- Electronic Packaging and Soldering Technologies
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- TiO2 Photocatalysis and Solar Cells
- Advanced Photocatalysis Techniques
- Anodic Oxide Films and Nanostructures
- Advanced ceramic materials synthesis
- Polymer Surface Interaction Studies
- Nanoporous metals and alloys
- Gas Sensing Nanomaterials and Sensors
- Synthesis and properties of polymers
- Electrocatalysts for Energy Conversion
- Aluminum Alloy Microstructure Properties
- Transition Metal Oxide Nanomaterials
- Aluminum Alloys Composites Properties
- Corrosion Behavior and Inhibition
- Microstructure and mechanical properties
- Magnesium Alloys: Properties and Applications
- Thermodynamic and Structural Properties of Metals and Alloys
- Nanomaterials for catalytic reactions
- Ammonia Synthesis and Nitrogen Reduction
Feng Chia University
2015-2024
Cobalt nitride thin films could be prepared by employing a direct current reactive sputtering deposition on (100) silicon substrates in mixtures of fixed Ar (4×10−1 Pa) and N2 at various partial pressures. The CoxN tailored appropriately controlling the pressure nitrogen. With adequately increasing nitrogen to argon pressure, series sequence phase formation from α-Co, Co4N, Co3N, Co2N, CoN observed. transition was accompanied substantial refinement improvement films’ grain structure. Rapid...
This study develops a low-energy rotating photocatalytic contactor (LE-RPC) that has Cu-doped TiO2 films coated on stainless-steel disks, to experimentally evaluate the efficiency of degradation and decolorization methylene blue (MB) under irradiation from different light sources (visible 430 nm, light-emitting diode [LED] 460 LED 525 nm). The production hydroxyl radicals is also examined. experimental results show activity doped with Cu2+ induced by illumination visible an LED. More than...
Amine-terminated self-assembled monolayers are molecular nanolayers, typically formed via wet-chemical solution on specific substrates for precision surface engineering or interface modification. However, homogeneous assembling of a highly ordered monolayer by the facile, wet method is rather tricky because it involves process parameters, such as solvent type, concentration, soaking time and temperature, humidity level. Here, we select 3-aminopropyltrimethoxysilane (APTMS) model molecule...
In this work, an attempt to fabricate nanostructured metallization patterns on SiO(2) dielectric layers is made by using plasma-patterned self-assembled monolayers (SAMs), in conjunction with a novel aqueous seeding and electroless process. Taking octadecyltrichlorosilane (OTS) as test material, the authors demonstrate that optimizing N(2)-H(2) plasma conditions leads successive conversion of topmost aliphatic chains alkyl SAMs carboxyl (COOH) hydroxyl (C-OH) functional groups, which was...
Taking plasma-enhanced chemical vapor deposited porous SiOCH (p-SiOCH) and octadecyltrichlorosilane (OTS) as model cases, this study elucidates the reaction pathways for alkyl-based self-assembled monolayers (SAMs) on carbon-doped organosilica films under N(2)-H(2) vacuum plasma illumination. In contrast to previous findings that carboxylic groups are found in SAMs only by exposure oxygen-based plasma, discovers that, upon reductive nitrogen-based surface functional can be instantly formed...
Highly porous low-dielectric-constant (low-k) dielectric materials with a constant (k) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, highly low-k film k value of 2.25, open porosity 32.0%, pore diameter 1.15 were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution order to form self-assembled monolayers (SAMs) onto it. The effects the formation SAMs on electrical characteristics reliability films characterized. As formed APTMS treatment,...
As the feature size of integrated circuits has been scaled down to 10 nm, rapid increase in electrical resistance copper (Cu) metallization become a critical issue. To alleviate increases Cu lines, co-sputtered CoW and CoB alloying metals were investigated as conductors barriers this study. Annealing CoM (M = W or B)/SiO2/p-Si structures reduced resistivity alloys, removed sputtering-deposition-induced damage, promoted adhesion. Additionally, both annealed CoW/SiO2 CoB/SiO2 displayed...