Abstract Metal–organic frameworks (MOFs) can efficiently purify hydrocarbons from CO 2 , but their rapid saturation, driven by preferential hydrocarbon adsorption, requires energy‐intensive adsorption–desorption processes. To address these challenges, an innovative approach is developed, enabling control over MOF flexibility through densification and defect engineering, resulting in intriguing inverse /C2 selectivity. In this study, the process induces shearing of crystal lattice contraction...

Transmission electron microscopy with in situ biasing has been performed on TiN/single‐crystal rutile TiO 2 /Pt resistive switching structures. Three elementary processes essential for switching: i) creation of oxygen vacancies by electrochemical reactions at low temperatures (<150 °C), ii) their drift the electric field, and iii) coalescence into planar faults (and dissociation from them) have documented. The a form vacancy discs {110} {121} planes, are bound partial dislocation loops,...

Cathodoluminescence real-color imaging and spectroscopy were employed to study the properties of Ga(2)O(3) nanowires grown with different Sn/Ga ratios. The structures under Sn-rich conditions show large spectral emission variation, ranging from blue red, a green transition zone. Spectral changes correlate in chemical composition structure found by energy dispersive electron diffraction. A sharp red correlates phase beta-Ga(2)O(3) polycrystalline SnO(2). origin band is discussed based on ab...

Electron channeling contrast imaging (ECCI) is used to characterize misfit dislocations in heteroepitaxial layers of GaP grown on Si(100) substrates. patterns serve as a guide tilt and rotate sample orientation so that can occur under specific diffraction conditions. This leads the selective depending conditions, confirmed by dynamical simulations, similar using standard invisibility criteria transmission electron microscopy (TEM). The onset evolution films with varying thicknesses (30 250...

A high throughput methodology for the study of surface segregation in alloys has been developed and applied to CuxPd1–x system. novel offset-filament deposition tool was used prepare composition spread alloy films (CSAFs), sample libraries with continuous lateral variation spanning range x = 0.05–0.95. Spatially resolved low energy ion scattering spectroscopy (LEISS) X-ray photoelectron (XPS) were characterize films' top-surface near-surface compositions, respectively, as functions...

In this study, in situ electrical biasing was combined with transmission electron microscopy (TEM) order to study the formation and evolution of Wadsley defects Magnéli phases during resistive switching titanium dioxide (TiO2). Resistive devices were fabricated from single-crystal rutile TiO2 substrates through focused ion beam milling lift-out techniques. Defect phase transformations monitored by diffraction contrast imaging inside TEM biasing. Reversible bipolar behavior observed these...

Threading dislocations in metal-organic chemical-vapor grown GaN films were imaged nondestructively by the electron channeling contrast imaging (ECCI) technique. Comparisons between ECCI and cross-sectional transmission microscopy indicated that pure edge can be ECCI. Total threading dislocation densities measured for various on engineered 4H-SiC surfaces ranged from 107to109cm−2. A comparison ultraviolet electroluminescent output at 380nm total density as revealed an inverse logarithmic dependence.

Although β-Ga2O3 thin films and nanowires (NWs) show promise as very stable reliable active components for high temperature gas sensors, their use at room temperatures is limited due to poor electrical conductivity. To address this problem, we grew Sn-doped by the vapor−liquid−solid (VLS) approach. NWs with diameters of 100−250 nm retained monoclinic structure, though photoluminescence (PL) emission was red-shifted up 50 relative deep defect band typically observed pure NWs. When higher...

The propagation behavior of basal plane dislocations from off-oriented 4H-SiC substrates into homoepitaxial layers has been investigated using transmission electron microscopy (TEM), secondary (SEM), and chemical etching. Cross-sectional TEM shows that in the substrate are dissociated pairs partial separated by a stacking fault with width about 40 nm. Near substrate/epilayer interface, where most convert to threading edge dislocations, two partials constrict before converting. Threading...

Electron channeling contrast imaging (ECCI) is a nondestructive diffraction-based scanning electron microscopy (SEM) technique that can provide microstructural analysis similar to transmission (TEM). However, because ECCI performed within an SEM and requires little no sample preparation, such be accomplished in fraction of the time. Like TEM, used image variety extended defects enables use standard invisibility criteria further defect characterization (e.g., Burgers vector determination)....

We present data on the filament size and temperature distribution in Hf0.82Al0.18Ox-based Resistive Random Access Memory (RRAM) devices obtained by transient thermometry high-resolution transmission electron microscopy (HRTEM). The shows that of nonvolatile conducting can reach temperatures as high 1600 K at onset RESET voltage 0.8 V power 40 μW. was estimated about 1 nm diameter. Hot increases surrounding resistivity oxide, causing it to conduct carry a significant fraction total current....

Nanostructured Al∕Pt multilayer films were ignited by single pulse irradiation from a Ti:sapphire femtosecond laser system. Critical ignition fluences (0.9–22J∕cm2) required to initiate self-propagating reaction quantified for different designs. Multilayers with smaller bilayer thickness relatively lower fluence ignition. Ignition threshold was also found be 1.4–3.6 times higher Al-capped multilayers than Pt-capped multilayers. Ablation measured Al (860±70mJ∕cm2) and Pt (540±50mJ∕cm2)...

Direct imaging of atomic step morphologies and individual threading dislocations in on-axis epitaxial 4H-SiC surfaces is presented. Topographically sensitive electron images the crystalline were obtained through forescattered detection inside a conventional scanning microscope. This technique, termed channeling contrast (ECCI), has been utilized to reveal configuration highly stepped, homoepitaxial films grown on mesa structures. Individual have consistently imaged at core spiral located...

The microstructure of TiO2 functional layers in nanoscale resistive switching devices was analyzed using Scanning Electron and Transmission Microscopies (SEM TEM). as-fabricated were amorphous with very weak lattice fringes High Resolution TEM. After electroformation low power dissipation (PDIS < 0.4 mW), the microstructural changes layer limited to an area approximately 75∼100 nm radius indicating that current path Joule heating localized. Since reset (≈2.4 mW) greater than power,...

Novel hierarchical ZnO−Ga2O3 nanostructures were fabricated via a two stage growth process. Nanowires of Ga2O3 obtained in the first by vapor−liquid−solid mechanism and used as foundation for self-assembled, ordered arrays ZnO during second vapor−solid mechanism. The resulting had final morphology consisting nanobrushes (NBs) with core branches self-assembling symmetrically six equiangular directions around core. Characterization NBs was performed scanning transmission electron microscopies,...

Electron diffraction in both SEM and TEM provides a contrast mechanism for imaging defects as well means quantifying elastic strain. backscatter (EBSD) is the commercially established method SEM-based analysis. In EBSD, Kikuchi patterns are acquired by charge-coupled device (CCD) camera indexed using commercial software. Phase crystallographic orientation information can be extracted from these patterns, researchers have developed cross-correlation methods to measure strain well.