A5101613991- GaN-based semiconductor devices and materials
- Infrared Target Detection Methodologies
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Remote-Sensing Image Classification
- Advanced Image Fusion Techniques
- Ga2O3 and related materials
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Image Processing Techniques and Applications
- Advanced Optical Sensing Technologies
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Seismic Waves and Analysis
- Earthquake Detection and Analysis
- Image and Video Stabilization
- CCD and CMOS Imaging Sensors
- Image and Signal Denoising Methods
- Advancements in Battery Materials
- Industrial Vision Systems and Defect Detection
- Geophysics and Sensor Technology
- Image and Object Detection Techniques
- Advanced SAR Imaging Techniques
- Color Science and Applications
- Semiconductor materials and interfaces
Fuyang Normal University
2025
Xidian University
2010-2024
State Grid Corporation of China (China)
2023
Zhejiang University of Water Resource and Electric Power
2023
Czech Academy of Sciences, Institute of Physics
2016
Abstract A monolithic fully-controlled high electron mobility transistor (HEMT) bidirectional power switch (FC-HEMT BPS) is studied and implemented for ultra-low turn-on voltage threshold voltage. The alternately embedded recess Schottky barrier diodes with p -GaN gate HEMTs in the common active region a distinctive feature of proposed device. FC-HEMT BPS sophisticated device two independent controls, capable operating four distinct modes. Its flexibility managing current first third...
In this paper, a novel AlGaN/GaN HEMT with Schottky drain and compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The (CFP) consists (DFP) several floating plates (FFPs). physical mechanisms CFP to improve breakdown voltage modulate distributions channel electric potential are investigated by two-dimensional numerical simulations Silvaco-ATLAS. Compared (SD DFP (SD-FP HEMT), superiorities SD-CFP lie in continuous improvement increasing...
A lateral Schottky barrier diode (SBD) on p-GaN/AlGaN/GaN heterostructure with arrayed p-GaN islands termination (API-SBD) is proposed and investigated in this work. On the basis of unique design approach, API-SBD presents a reduced reverse leakage current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{R}$ </tex-math></inline-formula> ) one order magnitude lower than that counterpart SBD only...
Most image data that we encounter is in color, thus measuring clutter color images has become increasingly important. The extension of phase correlation to quaternion space, which can measure similarity as well the structural between two images, defined. It used describe global images. degrees experimental probability detection and predicted by metric are presented. Experiment results show phase-correlation-based perform quantifying clutter.
As the pixel dimensions of complementary metal-oxide-semiconductor sensors are approaching wavelength visible light, significant diffraction effects occur in architecture region, resulting decreased optical efficiency and increased spatial crosstalk. By introducing finite-difference time-domain approach, performance typical 1.75-, 1.35-, 1.05-μm pitch pixels is simulated analyzed, respectively, this brief. Several new approaches, which beneficial to overcome physical limitations conventional...
In this paper, we present a two-dimensional (2D) fully analytical model with consideration of polarization effect for the channel potential and electric field distributions gate field-plated high electron mobility transistor (FP-HEMT) on basis 2D Poisson's solution. The dependences drain bias, charge density, FP structure parameters, AlGaN/GaN material etc. are investigated. A simple convenient approach to designing breakdown voltage FP-HEMTs is also proposed. validity demonstrated by...
A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated in this work. The recessed Schottky drain technique is utilized to effectively reduce the on-state voltage thus lowering power loss of switches. significant reduction parasitic elements area obtained by integration. fabricated exhibits a threshold ~1.85 V, ~0.63 forward off-state breakdown voltages ~650 V at I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al2O3 dielectric and 0.3 μm field-plate (FP)-MOS—HEMT. Compared conventional HEMT (HEMT) the same dimensions, FP-MOS—HEMT 0.6 gate length exhibits improved maximum drain current of 1141 mA/mm, peak extrinsic transconductance 325 mS/mm effective suppression leakage in both reverse direction (by about one order magnitude) forward more than two orders magnitude). Moreover, is slightly larger that HEMT,...
Background clutter is becoming one of the most important factors affecting target acquisition performance electro-optical imaging systems. A novel metric based on sparse representation proposed in this paper. Based representation, similarity vector defined to describe between background and feature domain, which a typical clutter. This newly applied Search_2 data set, experiment results show that its prediction correlates well with detection probability observers.
Most existing target acquisition (TA) models neglect the influence of background clutter, which results in inaccurate prediction TA performance a complicated environment. In this paper, all clutter is first quantitatively characterized by distribution edge metric, and its effects on detection probability are analyzed. Further, novel model developed combining proposed metric task based statistics theory. Moreover, validated search_2 dataset, experiment show that it more consistent with...
A novel GaN-based step-doping superjunction current-aperture vertical electron transistor (SD-SJ CAVET) with SD n- and p-pillars is proposed demonstrated by two-dimensional numerical simulations. Compared the conventional SJ CAVET, greater doping concentration more uniform electric field distributions can be realized in SD-SJ CAVET based on special structure features, leading to further improvement both breakdown voltage (BV) specific on-resistance (RonA). Optimized results for three parts...
We report the studies of In0.15Al0.85N/AlN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors with a field plate (FP) and plasma-enhanced chemical vapor deposition (PECVD) SiN layer as gate dielectric well surface passivation (FP-MIS HEMTs). Compared conventional (HEMTs) same dimensions, FP-MIS HEMTs exhibit maximum drain current 1211 mA/mm, breakdown voltage 120V, an effective suppression collapse, about one order magnitude reduction in reverse leakage, more than...
A GaN/Al0.3Ga0.7N/AlN/GaN high-electron mobility transistor utilizing a field plate (with 0.3 μm overhang towards the drain and 0.2 source) over 165-nm sputtered HfO2 insulator (HfO2-FP-HEMT) is fabricated on sapphire substrate. Compared with conventional field-plated HEMT, which has same geometric structure but uses 60-nm SiN beneath (SiN-FP-HEMT), HfO2-FP-HEMT exhibits significant improvement of breakdown voltage (up to 181 V) as well record field-plate efficiency 276 V/μm). This because...
A new design approach for TFETs without physical doping is provided and demonstrated based on the polarization effect first time in this paper. And a polarization-induced InN-based TFET (PI-InN-TFET) proposed investigated by two-dimensional numerical simulations. Compared with conventional (D-InN-TFET), device features formation of P-type source N-type drain induced near heterojunctions need any doping, which makes it possible PI-InN-TFET to avoid random dopant fluctuation (RDF) problems...
The development of a target acquisition performance model for an electro-optical imaging system is seriously affected by the description and background characteristics at present. Based on Hidden Markov Model (HMM), different clutter metric proposed to quantify influence detection in this article. It first simulates process recording human brain optimizing HMM parameters represent as far possible. And then defined be similarity, estimated computed parameters, between background. Finally,...
A p-GaN gate high electron mobility transistor (HEMT) based monolithic bidirectional switch with diode bridge structures is demonstrated. The features four recessed anode Schottky barrier diodes embedded in a HEMT, which effectively reduces the on-state voltage and minimizes parasitic elements. proposed device exhibits threshold of 1.84 V, low 1.13 forward reverse off-state breakdown voltages ∼1100 V. In addition, function as an AC power chopper successfully verified.
Abstract The treatment effect of the oxygen plasma on performance recessed AlGaN/GaN Schottky barrier diodes has been investigated. After treatment, turn-on voltage and reverse leakage current are slightly changed, while collapse could be effectively mitigated. X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by which responsible for reduced collapse. In addition, device treated relatively more inhomogeneous height.
A method to quantify clutter in color images is presented. This based on a grayscale metric, target structure similarity (TSSIM) which showed the best correlation with human perception than other available metrics. The proposed new metric designed measure background perceptually decorrelated quasi-uniform space of CIELAB. TSSIM extended include by applying it individual dimensions CIELAB and combining components together using weighted means. To evaluate this are both applied Search_2...
The descriptive capability of color images for a scene is better than that grayscale images. Traditional registration methods to register convert them ones, in which the precision decreased due loss information. By extending some properties discrete Fourier transform quaternion domain, discrete-quaternion-Fourier-transform-based method proposed this paper. Color are represented form, and parameters rotation-scale-translation model recovered using rotation scale DQFT phase correlation....