Ming Du

ORCID: 0000-0003-1602-6646
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About
Contact & Profiles
Research Areas
  • Advanced X-ray Imaging Techniques
  • Medical Imaging Techniques and Applications
  • GaN-based semiconductor devices and materials
  • Cell Image Analysis Techniques
  • Advanced Electron Microscopy Techniques and Applications
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Functional Brain Connectivity Studies
  • Silicon Carbide Semiconductor Technologies
  • Advanced Fluorescence Microscopy Techniques
  • Advanced X-ray and CT Imaging
  • Electron and X-Ray Spectroscopy Techniques
  • Nuclear Physics and Applications
  • X-ray Spectroscopy and Fluorescence Analysis
  • Medical Image Segmentation Techniques
  • Copper Interconnects and Reliability
  • Image Processing Techniques and Applications
  • Seismic Imaging and Inversion Techniques
  • ZnO doping and properties
  • Digital Holography and Microscopy
  • Supercapacitor Materials and Fabrication
  • X-ray Diffraction in Crystallography
  • Chalcogenide Semiconductor Thin Films
  • Electronic Packaging and Soldering Technologies
  • Advanced Neuroimaging Techniques and Applications

Argonne National Laboratory
2020-2022

Nanjing University of Posts and Telecommunications
2022

Northwestern University
2016-2021

Xidian University
2011-2021

Brookhaven National Laboratory
2021

National University of Singapore
2015

Oak Ridge National Laboratory
2009

Harbin Electric Corporation (China)
2008

X-rays offer high penetration with the potential for tomography of centimetre-sized specimens, but synchrotron beamlines often provide illumination that is only millimetres wide. Here an approach demonstrated termed Tomosaic tomographic imaging large samples extend beyond field view X-ray system. This includes software modules image stitching and calibration, while making use existing available in other packages alignment reconstruction. The compatible conventional beamline hardware,...

10.1107/s1600577518010093 article EN cc-by Journal of Synchrotron Radiation 2018-08-21

X-ray ptychography is becoming the standard method for sub-30 nm imaging of thick extended samples. Available algorithms and computing power have traditionally restricted sample reconstruction to 2D slices. We build on recent progress in optimization high performance solve ptychographic phase retrieval problem directly 3D. Our approach addresses samples that do not fit entirely within depth focus system. Such pose additional challenges because internal diffraction effects sample. demonstrate...

10.1364/optica.5.001078 article EN cc-by Optica 2018-08-31

Conventional tomographic reconstruction algorithms assume that one has obtained pure projection images, involving no within-specimen diffraction effects nor multiple scattering. Advances in x-ray nanotomography are leading toward the violation of these assumptions, by combining high penetration power x-rays, which enables thick specimens to be imaged, with improved spatial resolution decreases depth focus imaging system. We describe a method where scattering and samples modeled multislice...

10.1126/sciadv.aay3700 article EN cc-by-nc Science Advances 2020-03-27

A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT ohmic drain, device features a hybrid Schottky-ohmic drain low work function Tungsten (W), based on which state-of-the-art ultralow turn-on voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\mathrm{ on}}$...

10.1109/jeds.2020.3042264 article EN cc-by-nc-nd IEEE Journal of the Electron Devices Society 2020-12-03

We describe and demonstrate an optimization-based X-ray image reconstruction framework called Adorym. Our provides a generic forward model, allowing one code to be used for wide range of imaging methods ranging from near-field holography fly-scan ptychographic tomography. By using automatic differentiation optimization, Adorym has the flexibility refine experimental parameters including probe positions, multiple hologram alignment, object tilts. It is written with strong support parallel...

10.1364/oe.418296 article EN cc-by Optics Express 2021-02-10

The penetration power of x rays allows one to image large objects, while their short wavelength for high spatial resolution. As a result, with synchrotron sources, has the potential obtain tomographic images centimeter-sized specimens sub-micrometer pixel sizes. However, limitations on beam and detector size make it difficult acquire such data this sort in single take, necessitating strategies combining from multiple regions. One strategy is tiled set local tomograms by rotating specimen...

10.1364/josaa.35.001871 article EN publisher-specific-oa Journal of the Optical Society of America A 2018-10-22

Neural microarchitecture is heterogeneous, varying both across and within brain regions. The consistent identification of regions interest one the most critical aspects in examining neurocircuitry, as these structures serve vital landmarks with which to map pathways. Access continuous, three-dimensional volumes that span multiple areas not only provides richer context for identifying such landmarks, but also enables a deeper probing microstructures within. Here, we describe X-ray...

10.1038/s41597-020-00692-y article EN cc-by Scientific Data 2020-10-20

Abstract Imaging is a dominant strategy for data collection in neuroscience, yielding stacks of images that often scale to gigabytes single experiment. Machine learning algorithms from computer vision can serve as pair virtual eyes tirelessly processes these images, automatically detecting and identifying microstructures. Unlike methods, our Flexible Learning-free Reconstruction Imaged Neural volumes (FLoRIN) pipeline exploits structure-specific contextual clues requires no training. This...

10.1038/s41598-018-32628-3 article EN cc-by Scientific Reports 2018-09-18

A lateral Schottky barrier diode (SBD) on p-GaN/AlGaN/GaN heterostructure with arrayed p-GaN islands termination (API-SBD) is proposed and investigated in this work. On the basis of unique design approach, API-SBD presents a reduced reverse leakage current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{R}$ </tex-math></inline-formula> ) one order magnitude lower than that counterpart SBD only...

10.1109/ted.2021.3118326 article EN IEEE Transactions on Electron Devices 2021-10-15

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This letter presents a novel banknote image processing system that includes recognition, general attrition evaluation, and feature identification, in which the phenomenon of deterioration is discussed detail for first time. To compare sensed with its reference, registration algorithm based on free-form deformations model (FFD) proposed, homogeneity-based energy (BDE) used as cost function. The...

10.1109/lsp.2008.921470 article EN IEEE Signal Processing Letters 2008-01-01

The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern HEMT's reliability. It observed that the threshold voltage shows a significant negative shift during typical long-term on-state gate overdrive stress. does not originate from presence as-grown traps in AlGaN barrier layer or generated process. By comparing relationships between and cumulative injected electrons under...

10.1088/1674-1056/24/1/017303 article EN Chinese Physics B 2015-01-01

A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated in this work. The recessed Schottky drain technique is utilized to effectively reduce the on-state voltage thus lowering power loss of switches. significant reduction parasitic elements area obtained by integration. fabricated exhibits a threshold ~1.85 V, ~0.63 forward off-state breakdown voltages ~650 V at I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/led.2021.3098040 article EN IEEE Electron Device Letters 2021-08-10

Different studies in X-ray microscopy have arrived at conflicting conclusions about the dose efficiency of imaging modes involving recording intensity distributions near (Fresnel regime) or far (Fraunhofer field downstream a specimen. A numerical study is presented on near-field holography, ptychography and far-field ptychography, where involves multiple overlapping finite-sized illumination positions. Unlike what has been reported for coherent diffraction imaging, which single pattern, it...

10.1107/s1600576720005816 article EN cc-by Journal of Applied Crystallography 2020-05-27

Exponential increases in data volumes and velocities are overwhelming finite human capabilities. Continued progress science engineering demands that we automate a broad spectrum of currently manual research manipulation tasks, from transfer sharing to acquisition, publication, analysis. These needs particularly evident large-scale experimental science, which researchers typically granted short periods instrument time must maximize experiment efficiency as well output quality accuracy. To...

10.1145/3217197.3217206 article EN 2018-06-07

Increases in X-ray brightness from synchrotron light sources lead to a requirement for higher frame rates hybrid pixel array detectors (HPADs), while also favoring charge integration over photon counting. However, transfer of the full uncompressed data will begin constrain detector design, as well limit achievable continuous rate. Here compression scheme that is easy implement HPAD's application-specific integrated circuit (ASIC) described, and how different degrees affect image quality...

10.1107/s1600577520013326 article EN cc-by Journal of Synchrotron Radiation 2020-12-02

A novel GaN-based vertical heterostructure field effect transistor (HFET) with nonuniform doping superjunctions (non-SJ HFET) is proposed and studied by Silvaco-ATLAS, for minimizing the specific on-resistance (RonA) at no expense of breakdown voltage (BV). The feature non-SJ HFET lies in concentration from top to bottom n- p-pillars, which different that conventional uniform (un-SJ HFET). physically intrinsic mechanism superjunction (non-SJ) further reduce RonA BV investigated revealed...

10.1088/1674-1056/27/4/047305 article EN Chinese Physics B 2018-04-01
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