A5088642859- Spectroscopy and Laser Applications
- Semiconductor Lasers and Optical Devices
- Laser Design and Applications
- Atmospheric Ozone and Climate
- Semiconductor Quantum Structures and Devices
- Atmospheric and Environmental Gas Dynamics
- Analytical Chemistry and Sensors
- Optical properties and cooling technologies in crystalline materials
- Photonic and Optical Devices
- Reservoir Engineering and Simulation Methods
- Optical Wireless Communication Technologies
- Microfinance and Financial Inclusion
- Advanced Sensor Technologies Research
- Laser Material Processing Techniques
- FinTech, Crowdfunding, Digital Finance
- Laser Applications in Dentistry and Medicine
- Polish Legal and Social Issues
- Photonic Crystal and Fiber Optics
- Sharing Economy and Platforms
- Information Systems and Technology Applications
- Advanced Fiber Laser Technologies
University of Szczecin
2023-2024
Łukasiewicz Research Network
2019-2024
Institute of Electron Technology
2012-2020
Instytut Techniczny Wojsk Lotniczych
2013-2014
In this paper, we report the results of investigation 9.5 µm AlGaAs/GaAs and strain compensated 4.7 AlInAs/InGaAs/InP QCLs. We also show for lasers based on lattice matched structures. The developed GaAs/AlGaAs record pulse powers 6 W at 77 K up to 50 mW 300 K. This has been achieved by careful optimization MBE growth process applying a high reflectivity metallic coating back facet laser. utilize AlInAs waveguide were grown exclusively without MOCVD regrowth. short wavelength, QCLs MOCVD....
Nonequilibrium Green's function modeling is used to study the mechanism through which doping of core region influences threshold current quantum cascade laser. For devices emitting in mid-infrared utilizing two-phonon resonance depopulation scheme thermal backfilling lower laser state identified as main interaction channel. Empirical-simulation based-relation between population, density, bias, and temperature found. This relation allows propose new scaling rule that couples bias with...
The development of charge coupled device thermoreflectance (CCD TR) instrumentation for accurate and rapid evaluation the thermal characteristics quantum cascade lasers is demonstrated. characterization such devices provides a mode comparing different operating conditions, geometries designs. method allows registration high-resolution maps temperature distribution in time not exceeding several seconds. capabilities CCD TR are compared with standard spectroscopy.
Room temperature, single mode, pulsed emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser fabricated by focused ion beam processing is demonstrated and analyzed. The mode centered at 1059.4 cm−1 (9.44 μm). A side suppression ratio of 43 dB was achieved. exhibits a peak output power 15 mW per facet room temperature. stable, observed within temperature tuning range, exhibiting shift rate 0.59 nm/K.
In this paper, we report on the experimental investigation of thermal performance lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated designs include double trench, single mesa, and buried heterostructures, which were grown by combined Molecular Beam Epitaxy (MBE) Metal Organic Vapor Phase (MOVPE) techniques. The characteristics lasers are investigated Charge-Coupled Device CCD thermoreflectance. This method allows for fast accurate registration high-resolution temperature...
Switchable, double wavelength generation is demonstrated from a single vertical external cavity surface-emitting laser chip. Power of ~0.5 W for two wavelengths λ≈967 nm and 1,018 i.e. within the spectral distance 51 were registered. In semiconductor heterostructure set nominally identical quantum wells was enclosed in single, two-mode resonant microcavity. The switching induced by change pump power. increase or decrease power changes active region temperature thus tunes spectrally gain...
In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs) based strained InGaAs/AlGaAs grown by molecular beam epitaxy GaAs substrate. Structures were with indium content from 1% to 6% in wells (QW) and 45% Al AlGaAs barrier layers. The design results heterostructure, however, no strain relaxation was observed as documented x-ray diffraction measurements up ∼3% QWs. investigation heterostructures devices performed, including structural electrooptical...
The Al 0.45 Ga 0.55 As/In x 1− As active regions in quantum cascade laser structures grown on (001) GaAs substrates were investigated using the high-resolution X-ray diffraction method. onset of strain relaxation process has been studied. Reciprocal-space mapping showed that diffuse scattering is visible early stage for structure with = 2.64% In layers. It proved result misfit dislocations generated by partial structures. integration enabled determination dislocation density.
In this paper, we report on the investigation of temperature induced degradation mode quantum cascade lasers (QCLs) with an emphasis influence different processing technology. We investigate and compare lattice matched AlInAs/InGaAs/InP QCLs various constructions, i.e., double trench, buried heterostructure ridge waveguide regarding thermal management, reliability sources degradation. The analysis was performed by CCD thermoreflectance spectroscopy, scanning electron microscope inspection...
We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In0.52Al0.48As designed for waveguide InGaAs/InAlAs/InP quantum cascade lasers. The effects temperature and V/III ratio on the surface morphology defect structure were studied. which developed cascaded In0.53Ga0.47As/In0.52Al0.48As active region, e.g., Tg = 520 °C 12, turned out to be not optimum thick layers. It has been observed that, after exceeding ~1 µm thickness, quality layers deteriorates. in-situ...
The room-temperature (300 K), pulsed mode operation of InP-based quantum cascade laser (QCL) is reported. This has been achieved by the use lattice matched AlInAs/InGaAs/InP heterostructure. Its design follows a 4-well, 2-phonon resonance scheme. QCL structures were grown MBE in Riber Compact 21T reactor. lasers utilize AlInAs waveguide and exclusively without MOVPE regrowth. High operating temperatures have careful optimization growth processing technology. Full Text: PDF References M....
Abstract In order to adjust the highly controllable and optimum growth conditions, multi-step interrupted-growth MBE processes were performed deposit a series of GaAs/Al0.45Ga0.55As QCL structures. The additional calibrations system carried out during designed interruptions. This solution was combined with relatively low rate active region layers, in suppress negative effects elemental flux instabilities. As result, fabricated structures have yielded devices operating peak optical power ∼12...
Non-uniform oxygen contamination in the superlattice region of a quantum cascade laser measured by secondary ion mass spectrometry.
In this work design, fabrication and characterization of mid-infrared AlInAs/InGaAs/InP QCLs taper quantum cascade lasers are presented. order to increase output power while keeping good beam quality, design resonator was used. We have studied devices emitting at 4.5 μm with different shapes (linear, concave convex) angles waveguide section, optimize the parameters, namely M <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> brightness....
Non-equilibrium Green’s function method is used to analyze electronic transport in a mid-infrared quantum cascade laser on microscopic level. Basing the excellent agreement found between calculated and experimental data, conclusions are derived that carrier distribution lower subband non-thermal, carriers extracted from active region both cold hot state. An estimate $$\tau _{3}=0.66$$ ps for upper lifetime at 77 K was which considerably differs value 1.4 evaluated form factors.
We investigate molecular beam epitaxy growth conditions of micrometers-thick In0.52Al0.48As designed for waveguide InGaAs/InAlAs/InP quantum cascade lasers. Effect temperature and V/III ratio on the surface morphology defect structure were studied. The which developed cascaded In0.53Ga0.47As/In0.52Al0.48As active region, e.g. TG=520°C 12, turned out to be not optimum thick layers. It has been observed that after exceeding ~1µm thickness quality layers deteriorates. in-situ optical...
In this work, two-section, coupled cavity, mid-IR quantum cascade lasers (QCLs) were characterized in terms of their tuning range and emission stability under operation towards potential application detection systems. Devices processed by inductively plasma reactive ion etching (ICP-RIE) from InP-based heterostructure, designed for the 9.x micrometer range. Single mode devices demonstrated with a better than 20 dB side suppression ratio (SMRS). The fabrication method resulted improved yield,...
We report recent results of works on quantum cascade lasers at the Institute Electron Technology. During that time we have developed technology emitting wavelengths 9.0–9.5 μm and 4.7 μm, based InGaAs/AlGaAs/GaAs InAlAs/InGaAs/InP heterostructures; both lattice matched strain compensated. The structures were grown by molecular beam epitaxy MBE metalorganic vapor phase MOVPE. MBE. For InP three types investigated; one exclusively without MOVPE overgrowth, second fabricated hybrid approach...
In this paper, we present a theoretical and experimental analysis of mid-infrared (4.7 μm) quantum cascade laser waveguides with different taper geometries: linear, convex, concave tapers. We have calculated measured brightness the optical beam maximal power density on front mirror for widths lengths taper. Convex geometry shows best performance highest powers were obtained.
Tuning the wavelength of emitted radiation is a tremendous feature quantum cascade lasers which enables their use in various applications. Usually, this tuning executed by change bias current or temperature. In paper, it demonstrated, both experimentally and theoretically, that yet another possibility laser offers doping density. For experimental demonstration, set GaAs/AlGaAs devices emitting range 9.3–9.7 µ $${\rm {m}}$$ was MBE grown processed. theoretical analysis, simulations employ...
The precise determination of carrier concentration in doped semiconductor materials and nanostructures is high importance. Many parameters an operational device are dependent on the proper or its distribution both active area as well passive parts waveguide claddings. Determining those a nondestructive manner is, one hand, demanded for fabrication process efficiency, but other, challenging experimentally, especially complex multilayer systems. Here, we present results In0.53Ga0.47As layers,...