Peng Luo

ORCID: 0000-0002-3552-9516
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About
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Research Areas
  • Silicon Carbide Semiconductor Technologies
  • Magnetic properties of thin films
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Electromagnetic Compatibility and Noise Suppression
  • Copper Interconnects and Reliability
  • Magnetic Properties and Applications
  • Adhesion, Friction, and Surface Interactions
  • Manufacturing Process and Optimization
  • Thin-Film Transistor Technologies
  • Antenna Design and Analysis
  • Radio Frequency Integrated Circuit Design
  • GaN-based semiconductor devices and materials
  • Microwave Engineering and Waveguides
  • Industrial Technology and Control Systems
  • Physics of Superconductivity and Magnetism
  • Theoretical and Computational Physics
  • Real-time simulation and control systems
  • Wireless Signal Modulation Classification
  • Energy Harvesting in Wireless Networks
  • Ultra-Wideband Communications Technology
  • Electrostatic Discharge in Electronics
  • Rheology and Fluid Dynamics Studies
  • Digital Holography and Microscopy
  • Advanced Antenna and Metasurface Technologies

Applied Materials (Germany)
2025

Xidian University
2019-2024

Shanghai Industrial Technology Institute
2021-2023

University of Sheffield
2017-2022

National University of Defense Technology
2022

Suzhou Thermal Engineering Research Institute
2020-2021

Southwest Petroleum University
2021

University of Science and Technology of China
2020

South China University of Technology
2019

Western Digital (Japan)
2006-2011

Semantic communication is a promising technology used to overcome the challenges of large bandwidth and power requirements caused by data explosion. representation an important issue in semantic communication. The knowledge graph, powered deep learning, can improve accuracy while removing ambiguity. Therefore, we propose system based on graph. Specifically, our system, transmitted sentences are converted into triplets using Triplets be viewed as basic symbols for extraction restoration...

10.3390/e24060846 article EN cc-by Entropy 2022-06-20

Magnetization properties of magnetic nanowire arrays are studied on various ferromagnetic materials grown in anodic alumina (alumite) and track etched polycarbonate (PCTE) membranes by pulsed electrodeposition. curves were measured as functions wire material, field orientation, length. The coercivity (Hc) remanent squareness (S) the derived from hysteresis loops a function angle (θ) between axis. For PCTE membranes, Hc(θ) for CoNiFe, NiFe, Co all show an otherwise-bell-type variation, while...

10.1063/1.1572197 article EN Journal of Applied Physics 2003-05-22

Materials-Technology Co-Optimization (MTCO) is used to engineer Plasma-Enhanced Chemical Vapor Deposition (PECVD) of dielectric material properties for the Inter-Die-Gap-Fill (IDGF) between bonded chiplets in 2D and 3D heterogeneous integration. Mechanical IDGF are accurately tuned eliminate cracking due external forces next planarization processes. Thermal effectively reduce thermal stress through downstream anneal deposition We demonstrate a working process flow evaluate mechanical...

10.4071/001c.128333 article EN IMAPSource Proceedings 2025-01-14

The white weathering layer materials that can effectively block the entire solar light band is of great importance for improving service life, safety, and reliability materials. In this work, CsxWO 3 @PDA was prepared by in situ polymerization to achieve high absorption full spectral range increase compatibility between particles polyvinylidene fluoride (PVDF). PVDF composite films with different particle contents were through compounding titanium dioxide (TiO 2 ) @PDA. characterized FT-IR,...

10.3389/fmats.2025.1531950 article EN cc-by Frontiers in Materials 2025-02-14

A single frequency of 500 Hz is used as the equivalent for traffic noise to calculate approximate diffraction in current road barrier designs. However, changes according different types vehicles moving at various speeds. The primary objective this study development a method calculating insertion loss based on frequencies. First, emissions large number classified by speed and type were measured obtain data spectrum. corresponding relation between vehicle type, speed, was obtained. Next,...

10.3390/app8010100 article EN cc-by Applied Sciences 2018-01-11

Return field-induced partial erasure (RFPE) in trailing-edge shielded perpendicular writers has been studied, both by modeling and experiments. For a given head-media combination, the return field underneath trailing shield increases with increasing write current. Once exceeding certain threshold, it will cause of bits that have just written main pole. Recording performance, such as reverse overwrite, spectral signal-to-noise ratio, bit-error rate are all found degraded at high currents, due...

10.1109/tmag.2006.888198 article EN IEEE Transactions on Magnetics 2007-01-23

The basic design and recording performance of advanced probe heads with trapezoidal pole tips are described. Eighty were chosen to study the effects different media designs on parametrics signal-to-noise ratio (SNR) performances. Excellent writability is demonstrated by a series overwriting (OW) nonlinear transition shift (NLTS) saturation measurements. Write currents as low 5 mA/sub o-p/ required for recording. OW can be obtained both high ratios. Better than -14 dB NLTS was measured at...

10.1109/tmag.2003.813773 article EN IEEE Transactions on Magnetics 2003-07-01

Dynamic Avalanche (DA) phenomenon poses a fundamental limit on the operating current density, turn-off power loss as well reliability of MOS-bipolar devices. Overcoming this is essential to ensure their safe operation in emerging electric transport. In work, detailed analysis 1.2 kV trench gated IGBTs are undertaken through experiments and calibrated TCAD simulations show cause DA method achieve free design for ultra-high density Si-IGBTs.

10.1109/iedm19573.2019.8993596 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2019-12-01

The 3-D scaling rules for the cathode cells and threshold voltages of a 1.2-kV trench clustered insulated gate bipolar transistors (TCIGBTs) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results an enhancement current gain inherent thyristor action which reduces forward voltage drop even more than that scaled (TIGBT). For identical switching losses, at factor k = 3, is reduced by 20% 300 K 30% 400 when compared to conventional TCIGBT (k 1). Most...

10.1109/ted.2018.2807318 article EN IEEE Transactions on Electron Devices 2018-02-27

Turn-off dV/dt controllability is an essential feature in IGBTs for flexible design power switching applications.However, the occurrence of Dynamic Avalanche (DA) during turn-off transients plays a key role on loss, and safe operating area IGBTs.This paper aims to clarify impact DA characteristics 1.2 kV trench through 3-D TCAD simulations as well experimental demonstrations.Measurement results show that enhanced at high current density supply voltage conditions, which aggravates its...

10.1109/tpel.2020.3014560 article EN IEEE Transactions on Power Electronics 2020-08-05

We studied the remanent field from perpendicular writer pole tips by micromagnetic modeling. The tip remanence has two causes: 1) residual flux yoke due to undesirable material properties and/or design and 2) geometry of tip. An optimal for low includes a wide short with relatively shallow flare angle around 30/spl deg/ that favors transverse major domains. Horizontal anisotropy in also helps suppress vertical magnetization, mainly yoke, which yields less into tip, hence lower remanence. is...

10.1109/tmag.2005.862758 article EN IEEE Transactions on Magnetics 2006-02-21

It is well-known that the dynamic avalanche (DA) phenomenon poses fundamental limits on power density, turn-off loss, dV/dt controllability, and long-term reliability of MOS-bipolar devices. Therefore, overcoming this essential to improve energy efficiency ensure their safe operation. In work, a detailed analysis 1.2-kV devices undertaken through both calibrated TCAD simulations experiments show cause DA impact current supply voltage, 3-D scaling rules performance. Furthermore, performance...

10.1109/ted.2020.3007594 article EN IEEE Transactions on Electron Devices 2020-07-21

In this article, we report on the analysis of ON-state behavior polarization super-junction (PSJ) heterojunction field-effect transistors (HFETs). Theoretical models for calculating sheet densities two-dimensional electron gas (2DEG) and hole (2DHG) are proposed calibrated with numerical simulations experimental results. To calculate area-specific resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...

10.1109/ted.2021.3115091 article EN IEEE Transactions on Electron Devices 2021-10-02

Abstract A dual‐band horizontally polarized (HP) antenna with omnidirectional radiation patterns is presented in this paper. The HP a vertical slot backed metal box, which excited by tapered feeding patch U‐slit for operation. Good radiations are observed. dual‐polarized (DP) then developed adding vertically (VP) element to the element. VP composed of two horizontal slots two‐branch feedline. DP achieves an overlapped impedance bandwidth 6% (2.34‐2.5 GHz) lower band and 15% (5.06‐5.91 upper...

10.1002/mop.32162 article EN Microwave and Optical Technology Letters 2019-11-19

Because of the bulk, complexity, calibration requirements, and need for operator training, most current flow-based blood counting devices are not appropriate field use. Standard imaging methods could be much more compact, inexpensive, with minimal requirements. However, due to diffraction limit, lacks nanometer precision required measure red cell volumes. To address this challenge, we utilize Mie scattering, which can nanometer-scale morphological information from cells, in a dark-field...

10.1364/boe.405510 article EN cc-by Biomedical Optics Express 2020-09-18

Basic design and recording performance of the advanced probe heads are described. Excellent writability is demonstrated by a series overwrite (OW) nonlinear transition shift (NLTS) saturation measurements. Write currents as low 5 mA/sub o-p/ required for recording. OW can be obtained with both high ratios. Media vibrating sample magnetometry coercivities 7000 Oe recorded 30 dB. Better than -14 dB NLTS was measured at linear density 600 kfci. Minimal side-writing has been observed using...

10.1109/tmag.2002.1017750 article EN IEEE Transactions on Magnetics 2002-07-01

In this paper, a parallel arrangement of silicon MOS-gated thyristor structure and carbide Power MOSFET is proposed experimentally demonstrated for the first time. Experimental results show that hybrid switch exhibits low conduction losses at current levels as well large current-carrying capability high levels. addition, compared to Clustered IGBT structure, 43% reduction in E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> without any...

10.1109/isie.2017.8001316 article EN 2017-06-01

A recessed p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -cathode IGBT (RP-IGBT) structure with very narrow mesa is analyzed through 3-D simulations in 1.2-kV field stop technology. Compared a conventional IGBTs, the RP-IGBT can effectively restrain collector-induced barrier lowering effect and hence, two-thirds reduction saturation current be achieved. As result, more than 10 μs short circuit capability enabled at junction...

10.1109/led.2018.2854363 article EN IEEE Electron Device Letters 2018-07-09

In the low signal-to-noise ratio region, a large number of bit errors occur, and it may exceed channel error correction capability receiver. Traditional communication system use technology automatic repeat-request to deal with this problem, which is time consuming waste resources. To enhance reliability system, we investigate reasoning decoding at semantic level instead grammar level. particular, propose model for text transmission, assisting be more robust in terrible environments. Based on...

10.3390/electronics11091358 article EN Electronics 2022-04-24

Commercial hard-drive products utilizing perpendicular magnetic recording technology have recently been announced and introduced. In this paper, we review key materials characteristics wafer process attributes in fabricating write heads. It becomes increasingly important for write-head to possess not only high moment, but also optimal coercivity, remanence, anisotropy Hk, magnetostriction, stress order meet head performance reliability requirements. Advanced film architectures discussed...

10.1109/tmag.2006.888200 article EN IEEE Transactions on Magnetics 2007-01-23

In this brief, a fully digitized pulse generator with programmable number and width is used as an ultrawideband (UWB) transmitter 17.7-dBm output power for see-through-wall (STW) radar. A differential operation broadband CMOS amplifier (PA) power-switchable mode fast settling time radar presented, achieving excellent consumption, considerable power, -3-dB bandwidth from 3.6 to 6.6 GHz. The on-chip transformer impedance transformation in the converting signals single ended. Fabricated 65-nm...

10.1109/tvlsi.2020.2972687 article EN IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2020-02-26

This paper simulates the adjacent track erasure vs. amount of squeeze a perpendicular recording media with high coercivity, as function skew angle using micromagnetic modelling. LLG equation and finite element magnetic head field is used in analysis. The fact that erase width narrower than write can be attributed to insufficient reverse overwrite evident presence small on signal left after erasure.

10.1109/intmag.2006.376526 article EN 2006-05-01

In this article, the ON-state performance limits of 4H-silicon carbide (SiC) IGBTs in field-stop technology are theoretically estimated for first time and compared against silicon counterparts. The theoretical analysis is based on static modeling a high-current p-i-n diode calculation results examined with TCAD simulations. Owing to conductivity modulation effect, losses 4H-SiC do not show any significant increase breakdown voltage (BV). However, large built-in potential SiC poses an...

10.1109/ted.2020.3033268 article EN IEEE Transactions on Electron Devices 2020-11-05
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