A5044099862- Graphene research and applications
- Quantum and electron transport phenomena
- 2D Materials and Applications
- Magnetic properties of thin films
- Diamond and Carbon-based Materials Research
- Carbon Nanotubes in Composites
- Topological Materials and Phenomena
- Advancements in Battery Materials
- Advanced Condensed Matter Physics
- Graphene and Nanomaterials Applications
- Multiferroics and related materials
- Silicon Carbide Semiconductor Technologies
- Physics of Superconductivity and Magnetism
- Low-power high-performance VLSI design
- Heusler alloys: electronic and magnetic properties
- Surface and Thin Film Phenomena
- Chemical and Physical Properties of Materials
- Oil Spill Detection and Mitigation
- Advancements in Semiconductor Devices and Circuit Design
- Underwater Vehicles and Communication Systems
- Water Quality Monitoring Technologies
- Near-Field Optical Microscopy
- Force Microscopy Techniques and Applications
- Magnetic and transport properties of perovskites and related materials
- Mechanical and Optical Resonators
American University of the Middle East
2014-2024
Laboratoire National des Champs Magnétiques Intenses
2018
Université de Montpellier
2010-2016
Centre National de la Recherche Scientifique
2010-2016
Laboratoire Charles Coulomb
2011-2016
ON Semiconductor (United States)
2010
We separate localization and interaction effects in epitaxial graphene devices grown on the C face of an ${8}^{\ifmmode^\circ\else\textdegree\fi{}}$-off-axis 4$H$-SiC substrate by analyzing low-temperature conductivities. Weak antilocalization are extracted at low magnetic fields, after elimination a geometric magnetoresistance subtraction magnetic-field-dependent Drude conductivity. The electron-electron correction is higher where disappear. Both phenomena weak but sizable same order...
Abstract The moiré engineering of two-dimensional magnets opens unprecedented opportunities to design novel magnetic states with promises for spintronic device applications. possibility stabilizing skyrmions in these materials without chiral spin-orbit couplings or dipolar interactions is yet be explored. Here, we investigate the formation and control ground state topological spin textures (TSTs) $${Cr}{I}_{3}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>C</mml:mi>...
We studied the in-plane magnetoresistance $R(B,T)$ anisotropy in epitaxial multilayer graphene films grown on Si face of a $6H\text{-SiC}$ substrate that originates from steplike morphology SiC substrate. To enhance anisotropy, combination argon atmosphere with graphite capping was used during film growth. The obtained micro-Raman spectra demonstrated complex structure smaller thickness terraces as compared to step edges. Several Hall bars different current/steps mutual orientations have...
The structural, optical, and transport properties of graphene grown by chemical vapor deposition (CVD) propane under hydrogen on the Si face SiC substrates have been investigated. We show that little changes in temperature during growth can trigger passivation surface hydrogen. Depending condition, hole or electron doping be achieved, down to a few ${10}^{11}$ cm${}^{\ensuremath{-}2}$. When is high ($T\ensuremath{\approx}1500--1550{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}$C), we...
The current status of long, self-organized, epitaxial graphene ribbons grown on the (0 0 −1) face 6H–SiC substrates is reviewed. First, starting from early stage growth it shown that C sublimation process not homogeneous. Most time starts defective sites, dislocations or point defects, define nearly circular flakes surrounded by bare SiC. These have a volcano-like shape with graphite chimney at centre, where original defect was located. At higher temperatures complete conversion occurs,...
We demonstrate that the carrier concentration of epitaxial graphene devices grown on C-face a SiC substrate is efficiently modulated by buried gate. The gate fabricated via implantation nitrogen atoms in crystal. charge neutrality point observed close to voltage zero, and can be populated either holes or electrons down low temperature (1.5 K). hole hardly tuned voltage, possibly because interface states below Dirac point. A remarkably large quantum Hall plateau for electrons.
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence almost free-standing character these monolayer sheets, which was confirmed by magneto-transport measurements. We find moderate p-type doping, carrier mobility half integer Quantum Hall effect typical quality samples. This opens way to fully compatible integration SiC...
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed a large temperature range, from $T=1.7$ K up to room temperature. MR exhibits maximum in range 120--240 K. is observed at intermediate magnetic fields ($B=2--6$ T), between weak localization and Shubnikov-de Haas regimes. It results competition two mechanisms. First, low-field increases continuously with $T$ has purely...
This paper proposed an initial engineering realization of underwater remotely operated vehicle (ROV) with multisensory system for oil spills monitoring and detection in seawater. It covers hardware software designs to tackle the purposes. Four environmental sensors, i.e. temperature, dissolved oxygen (DO), electrical conductivity (EC), reduction potential (ORP), were attached on ROV monitor water quality parameters. Data from these sensors transfered wirelessly a ground segment be analyzed....
Abstract Skyrmions are promising for the next generation of spintronic and magnonic devices, but their zero‐field stability controlled nucleation through chiral interactions remain challenging. In this theoretical study, potential moiré magnetic heterostructures to generate ordered skyrmion lattices from stacking‐dependent magnetism in 2D magnets is explored. Heterostructures formed by twisting ultrathin CrBr 3 films on top CrI substrates considered, assuming a moderate interfacial...
We present the growth and characterization of epitaxial Graphene on (000-1) (11-20) planes. In both cases, was carried out in a RF furnace, by implementing our technique confined atmosphere, covering SiC substrate with graphitic cap during growth. The grown material investigated means AFM, SEM, Raman spectroscopy magneto transport. Contrary to (0001) face, faces (11-20), almost free standing monolayers very high quality are grown. These sheet uniform, continuous, strain-free lightly doped....
We report on the growth of GaSe films by molecular beam epitaxy both (111)B GaAs and sapphire substrates. X-ray diffraction reveals perfect crystallinity with c-axis normal to substrate surface. The samples grown under Ga rich conditions possess an additional gallium film top monochalcogenide layer. This metallic shows two normal-to-superconducting transitions which are detected at T c ≈ 1.1 K 6.0 K. They correspond likely β α-phases in form bulk droplets respectively. Our results...
We review some of the electric properties self-organized graphene monolayers on carbon face SiC. From sparse surface defects acting as nucleation centres, isolated layers grow in shape triangles or ribbons step bunched SiC surface. Using e-beam lithography, standard Hall bars have been made. At low magnetic fields, conductance fluctuations, weak localization, electron–electron interactions are usually observed. higher anomalous quantum (QHE) effect typical monolayer is also In this regime,...
We have investigated the disorder of epitaxial graphene close to charge neutrality point (CNP) by various methods: (i) at room temperature, analyzing dependence resistivity on Hall coefficient; (ii) fitting temperature coefficient down liquid helium temperature; (iii) magnetoresistances low temperature. All methods converge give a amplitude $(20\ifmmode\pm\else\textpm\fi{}10)$ meV. Because this relatively disorder, CNP, sample does not exhibit standard value...
Abstract Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8° off-axis 4H-SiC samples, large homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of almost free-standing character these monolayer sheets, which was confirmed by magneto-transport measurements. On best we find moderate p -type doping, high-carrier mobility resolve half-integer quantum Hall effect typical high-quality samples. A...
Magnon dynamics in skyrmion lattices have garnered significant interest due to their potential applications topological magnonics. Existing theories often follow a single-momentum approach, assuming Dzyaloshinskii-Moriya Interaction (DMI) minimize the skyrmion's dimensions, which can lead oversimplification describing magnon behavior. This study introduces multi-momentum operator theory for magnons large 2D skyrmions, where each encompasses several thousand spins. The proposed fully...
Moiré magnets have emerged as intriguing platforms for hosting exotic magnetic states due to the competing interactions within these materials. Recent experiments reported noncollinear in moiré CrI
We demonstrate that the carrier concentration of epitaxial graphene devices grown on C-face a SiC substrate is efficiently modulated by buried gate. The gate fabricated via implantation nitrogen atoms in crystal, 200 nm below surface, and works well at intermediate temperatures: 40K-80K. Dirac point observed moderate voltages (1-20V) depending upon surface preparation. For temperatures 40K, inefficient as channel frozen out. However, remains very close to value set T\sim 40K. absence...
We report magnetotransport measurements in single epitaxial graphene layers grown on the C-face of an 8° off-axis 4H-SiC substrate using high temperature annealing conditions with a graphite cap covering sample. The sheets were found p-type doped, mobilities varying between 1000 and 11000 cm²/V.s from device to at 1.6 K. examine signature weak localization universal conductance fluctuations magnetic field we show that phase coherence lengths extracted two phenomena are satisfactory agreement.
Nuclear Magnetic Resonance spectroscopy and imaging can be classified as inductive techniques working in the near- to far-field regimes. We investigate an alternative capacitive detection with use of micrometer sized probes positioned at sub wavelength distances sample order characterize model evanescent electromagnetic fields originating from NMR phenomenon. report that this experimental configuration available signal is one magnitude larger follows exponential decay inversely proportional...
Skyrmions are promising for the next generation of spintronic and magnonic devices, but their zero-field stability controlled nucleation through chiral interactions remain challenging. In this theoretical study, we explore potential moir\'e magnetic heterostructures to generate ordered skyrmion lattices from stacking-dependent magnetism in 2D magnets. We consider formed by twisting ultrathin CrBr_3 films on top CrI_3 substrates, assuming a moderate interfacial Dzyaloshinskii-Moriya...