Min Su Kim

ORCID: 0000-0002-4423-3290
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About
Contact & Profiles
Research Areas
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Gas Sensing Nanomaterials and Sensors
  • Copper-based nanomaterials and applications
  • GaN-based semiconductor devices and materials
  • Advanced Sensor and Energy Harvesting Materials
  • Thin-Film Transistor Technologies
  • Organic Electronics and Photovoltaics
  • Conducting polymers and applications
  • Silicon Nanostructures and Photoluminescence
  • Quantum Dots Synthesis And Properties
  • Semiconductor materials and devices
  • Tactile and Sensory Interactions
  • Supercapacitor Materials and Fabrication
  • Nanowire Synthesis and Applications
  • Chalcogenide Semiconductor Thin Films
  • Plasmonic and Surface Plasmon Research
  • 2D Materials and Applications
  • Photonic and Optical Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Photonic Communication Systems
  • Magnesium Oxide Properties and Applications
  • Optical Network Technologies
  • Gold and Silver Nanoparticles Synthesis and Applications
  • CCD and CMOS Imaging Sensors

Inha University
2021-2025

Dongguk University
2025

Kyungpook National University
2020

Korea University
2018-2020

Wonik IPS (South Korea)
2020

Sungkyunkwan University
2012-2019

Institute for Basic Science
2014-2017

Government of the Republic of Korea
2015-2017

Korea Institute of Nuclear Safety
2017

Suwon Research Institute
2015-2017

We observe that the Fuchs–Sondheimer model works for thickness-dependent thermal conductivity of MoS<sub>2</sub> down to 10 nm in thickness at room temperature, yielding a phonon mean free path 17 bulk.

10.1039/c6nr09484h article EN Nanoscale 2017-01-01

10.1007/s12541-020-00337-5 article EN International Journal of Precision Engineering and Manufacturing 2020-03-05

Abstract The recent challenges for improving the operation speed of nanoelectronics have motivated research on manipulating light in on-chip integrated circuits. Hybrid plasmonic waveguides with low-dimensional semiconductors, including quantum dots and wells, are a promising platform realizing sub-diffraction limited optical components. Meanwhile, two-dimensional transition metal dichalcogenides (TMDs) received broad interest optoelectronics owing to tightly bound excitons at room...

10.1038/ncomms13663 article EN cc-by Nature Communications 2016-11-28

Abstract The fabrication of a skin‐attachable, stretchable array high‐sensitivity temperature sensors is demonstrated. sensor consists single‐walled carbon nanotube field‐effect transistor with suspended gate electrode poly( N ‐isopropylacrylamide) (PNIPAM)‐coated gold grid/poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate and thermochromic leuco dye. exhibits very high sensitivity 6.5% °C −1 at temperatures between 25 45 °C. With increasing temperature, the bends due to deswelling...

10.1002/adfm.201807679 article EN Advanced Functional Materials 2018-12-20

Abstract A high‐voltage supercapacitor with shape memory for driving an integrated NO 2 gas sensor is fabricated using a Norland Optical Adhesive 63 polymer substrate, which can recover the original after deformation by short‐time heating. The consists of multiwalled carbon nanotube electrodes and organic electrolyte. By electrolyte consisting adiponitrile, acetonitrile, dimethyl carbonate in optimized volume ratio 1:1:1, high operation voltage V obtained. Furthermore, asymmetric...

10.1002/adfm.201901996 article EN Advanced Functional Materials 2019-04-12

Electrochemical doping of the n-type polymer poly(benzimidazobenzophenanthroline) (BBL) in contact with ionic liquids reveals a peak drain current (ID) vs gate voltage (VG) behavior, i.e., conductivity versus electron density. The is related to simultaneously acquired current-gate (IG-VG) charging curves that are integrated yield total charge accumulation. IG-VG traces reveal three separate redox events upon BBL can be correlated ID-VG behavior. We assign first broad accumulation mobile...

10.1021/acsami.4c22852 article EN ACS Applied Materials & Interfaces 2025-02-28

III–V semiconductors are considered ideal materials for optoelectronic applications due to their direct bandgap and wide tunable range of energy. However, devices based on have been plagued by significant surface recombination imperfect bonding. Meanwhile, 2D transition metal dichalcogenides (TMDs) exhibit unique electrical properties, including a dangling bond‐free surface, which has led extensive research into potential electronic applications. optical such as photodetectors utilizing...

10.1002/pssr.202500001 article EN cc-by physica status solidi (RRL) - Rapid Research Letters 2025-03-27

Abstract A flexible liquid metal loudspeaker (LML) is demonstrated consisting of a gallium‐based eutectic (Galinstan) and basic aqueous electrolyte (NaOH (aq) ). The LML driven by motion induced the electrochemically controlled interfacial tension Galinstan in NaOH under an applied alternating current (AC) voltage. fabricated produces sound waves human audible frequency band with pressure level ≈40–50 dB at 1 cm from device exhibits mechanical stability bending deformation radius 3 mm....

10.1002/smll.201905263 article EN Small 2019-11-25

We investigated a simple but effective method to precisely control the desired number of graphene layers on Ni<sub>x</sub>Cu<sub>1−x</sub> alloy substrates by thermal chemical vapor deposition.

10.1039/c4tc01979b article EN Journal of Materials Chemistry C 2015-01-01

Flexible pentacene-based organic thin-film transistors (TFTs) were fabricated and their performance was investigated as a function of the bending radius thickness polydimethylsiloxane (PDMS) encapsulation layer. The TFTs on flexible polyimide film (film thickness: 75 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> ), encapsulated by PDMS Degradation device during...

10.1109/tdmr.2017.2780267 article EN IEEE Transactions on Device and Materials Reliability 2017-12-06

Reported here is the low-temperature growth of multiple-stack high-density ZnO nanoflower/nanorod structures on polyethylene naphthalate (PEN) substrates derived from surface modification seed layers using an atmospheric-pressure plasma jet (APPJ) treatment. The treatment could provide several advantages to structures: (i) wettability changes hydrophobic hydrophilic, resulting in higher energies for nanoflowers, (ii) nucleation sites increase due increased roughness caused by etching, and...

10.1088/0957-4484/23/48/485606 article EN Nanotechnology 2012-11-06
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