A5079369225- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Plasma Diagnostics and Applications
- Ion-surface interactions and analysis
- Plasma Applications and Diagnostics
- Fusion materials and technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Vacuum and Plasma Arcs
- Nuclear Materials and Properties
- Material Properties and Applications
- Advanced materials and composites
- Advanced Materials Characterization Techniques
- Intermetallics and Advanced Alloy Properties
- Silicon Nanostructures and Photoluminescence
- Surface Treatment and Coatings
- Laser-Plasma Interactions and Diagnostics
- Electrohydrodynamics and Fluid Dynamics
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Microstructure and mechanical properties
- Radiation Effects in Electronics
- Advanced Sensor Technologies Research
- Tribology and Wear Analysis
- Radioactive element chemistry and processing
National Research University Higher School of Economics
2015-2024
Moscow State Institute of Electronics and Mathematics
2003-2024
Mykolaiv Observatory
2021
University High School
2019
Advanced Materials and Technologies (Slovenia)
2010-2012
Russian Academy of Sciences
2009
Scientific and Production Association of Electromechanics (Russia)
2007
Bauman Moscow State Technical University
2000-2003
Institute of Metallurgy
1981
Abstract In this study, a modified technique of control current stress to investigation thin gate dielectric MIS structures is proposed. This allows monitor charge trapping in under high‐field and another situations (irradiation, plasma, hot carriers, etc.). The also may be used for testing defects. Unlike simple techniques, example constant J‐ramp stress, the proposed method uses sequence measuring pulses. At same time, processes charging discharging structure capacitance as well are taken...
The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel sensitive field effect transistors (RADFET) which are capable to function under conditions high-field tunnel injection electrons into the dielectric. We demonstrate that these conditions, dose sensitivity sensor can be significantly raised, and, besides, intensity monitored in situ basis determining ionization current arising dielectric film. proposes model allowing make...
Abstract The effect of high‐field injection‐thermal and irradiation treatments on the MIS structures reliability defect reduction in nanoscale gate dielectric has been investigated. Injection‐thermal treatment (ITT) consisted electron injection into with charge defined value subsequent parameter stabilization by means thermal annealing. have studied using novel techniques multilevel current stress. Our study shows that ITT can improve (increase charge‐to‐breakdown value) identify defective...
Methods to modify gate dielectrics of MIS structures by irradiation treatments and high-field electron injection into dielectric are considered.In addition, distinctive features these methods used correct parameters devices studied.It was found out that negative charge, accumulating in the thin film phosphosilicate glass (PSG) structure having a two-layer SiO2-PSG under or during treatment can be threshold voltage improve charge stability raise breakdown for devices.It is proved density...
The paper considers an influence of different kinds radio-frequency plasma treatments onto modification MIS structures with a thermal SiO2 film which is aimed at improvement electro-physical parameters the film.It was found that for it more preferable to utilize oxygen treatment performed by setup parallel-plate-type reactor.This due fact allows have lesser degradation charge characteristics gate dielectric in comparison cylindrical quartz reactor.The stimulates restructuring and, as result,...
The inuence of injection-thermal and plasma treatments on the characteristics MOS-structure is studied.It shown that thermal stable part negative charge which accumulates in phosphorus-silicate glass (PSG) lm structures with two-layer gate dielectric SiO2PSG under high-eld FowlerNordheim electron injection can be used for modication MOS-structures above described structure.The are oered to use improving reliability nding samples have defects.It found using allows increase radiation stability...
In this study, a new technique of multilevel current stress for investigation thin oxide layers MOS structures is proposed. This allows to investigate the generation and relaxation positive negative charges, accumulating in, nano-thickness gate dielectric under many stressing situations. The parameters characterizing change charge state in during have been monitored by means time dependence voltage shift applied sample injection. method takes into account process capacitance charging...
We have investigated processes of modification and changing the charge state MOS structures having a multilayer gate dielectric based on thermal SiO2 film doped with phosphorus under conditions different modes high-field electron injection an irradiation. determined that negative charge, accumulating in phosphosilicate glass (PSG) ultra thin two-layer SiO2-PSG both tunneling electrons beam, could be used for devices same structure (e.g. correction threshold voltage, increase stability...
A model of thermofield electron emission from the metal cathode with a thin insulating film on surface in gas discharge is developed. It describes tunneling electrons substrate into film, their motion it, and going out volume. Expressions for efficiency current density are obtained, which correct wide ranges variation temperature electric field strength film. In limiting cases low strong also high weak results agree those obtained corresponding analytical formulas. The can be used simulation...