A5023782567- Advancements in PLL and VCO Technologies
- Radio Frequency Integrated Circuit Design
- Analog and Mixed-Signal Circuit Design
- Semiconductor Lasers and Optical Devices
- Luminescence Properties of Advanced Materials
- Advancements in Semiconductor Devices and Circuit Design
- Low-power high-performance VLSI design
- Gas Sensing Nanomaterials and Sensors
- Advanced Energy Technologies and Civil Engineering Innovations
- Semiconductor materials and devices
- VLSI and Analog Circuit Testing
- ZnO doping and properties
- Radiation Detection and Scintillator Technologies
- Photonic and Optical Devices
- Copper-based nanomaterials and applications
- Terahertz technology and applications
- Ammonia Synthesis and Nitrogen Reduction
Guru Gobind Singh Indraprastha University
2016-2022
Council of Scientific and Industrial Research
2013
IBM (United States)
2012
This paper presents a new design of low power voltage controlled oscillator (VCO) circuit using three transistors NOR-gate and I-MOS (inversion mode) varactor tuning method. Variation in the oscillation frequency has been obtained by varying output load capacitance with use consisting two PMOS connected parallel. Variable across achieved source/drain ([Formula: see text] back-gate text]. [Formula: from 1[Formula: text]V to 2[Formula: provides deviation 1.970[Formula: text]GHz 1.379[Formula:...
In Ultra Deep Sub Micron technology nodes, particularly 45nm and below, multiple power supplies are needed to achieve optimum performance. such SoC's, level shifters play an important role in translating the signals from one voltage another. The conventional suffer contention between pull up down transistors which leads increase delay consumption, so existing techniques unable address requirement of wide range translation at lower core voltages below 1V. this paper a new shifter has been...
Present work focuses on the effective doping of multi-walled carbon nanotube (CNT) in ZnS:Cu phosphor nano-composite and thereafter improvement optical performance electroluminescent (EL) device due to increased local field effects. To facilitate CNTs into decrease operating voltage EL device, were shortened by milling incorporated effectively using a flux assisted solid-state annealing reaction. Interestingly shorter length used; greater was enhancement, brightness efficiencies observed for...
Abstract This paper presents a low-power, wide tuning range CMOS voltage-controlled oscillator with MCML (MOS current mode logic) differential delay cell. Voltage controlled (VCO) circuit is designed in TSMC 0.25 μm process. To achieve the broad frequency concept of variable capacitance employed proposed VCO circuit. Source/drain voltage (V tune ) and body bias b I-MOS varactor are used to at different widths (W). The dual control results from 0.528 GHz 2.014 GHz. VCO's figure merit (FoM)...
A 3-stage low power ring voltage-controlled oscillator (VCO) with variable capacitance implemented the I-MOS varactor has been reported in this paper. Three transistors based NAND gate used as an inverter delay stage along varactor. The tuning of proposed VCO achieved by varying source/drain tune voltage (Vtune) and substrate bias (Vb) Results show that oscillation frequency is tunable from 0.714 GHz to 1.05 1GHz under control Vtune varies 1V 2V Vb 0V 3V 1.8V supply (Vdd). shows consumption...
This paper reports a hybrid ring VCO with low power consumption using single ended delay cells. A 3-stages shows frequency variation from 2.049 GHz to 8.971 0.51 mW 3.12 mW. In the 5-stages, varies 1.153 5.130 0.093 5.581 Further, 7-stages provides 0.874 3.678 0.138 8.041 Tuning range of 125.63%, 126.59% and 123.19% has been achieved 3-stages, 5-stages VCO, respectively. Supply voltage varied 1V 3V. Phase noise –83.1dBc/Hz at 1MHz, –90.6dBc/Hz 1MHz –90.8dBc/Hz have reported for 3, 5 The...
This paper reports a hybrid ring VCO with low power consumption using single ended delay cells. A 3-stages shows frequency variation from 2.049 GHz to 8.971 0.51 mW 3.12 mW. In the 5-stages, varies 1.153 5.130 0.093 5.581 Further, 7-stages provides 0.874 3.678 0.138 8.041 Tuning range of 125.63%, 126.59% and 123.19% has been achieved 3-stages, 5-stages VCO, respectively. Supply voltage varied 1V 3V. Phase noise –83.1dBc/Hz at 1MHz, –90.6dBc/Hz 1MHz –90.8dBc/Hz have reported for 3, 5 The...
Present work focuses on the effective doping of multi-walled carbon nanotube (CNT) in ZnS:Cu phosphor system and thereafter improvement optical performance electroluminescent (EL) device due to effect increased local field. To facilitate CNTs into decrease operating voltage EL device, were shortened by milling incorporated effectively using a flux assisted solid-state annealing reaction. Interestingly shorter length used, greater was field enhancement, brightness efficiency observed for...
This paper presents a novel low-power four-stage voltage controlled ring oscillator (VCRO) designed in the TSMC 180 nm CMOS technology. Each stage proposed VCRO consists of differential delay cell. Output frequency tuning is by I-MOS varactor connected at output each stage. Different performance parameters, including range, power consumption, phase noise and figure merit, have been obtained Results show that oscillation tunable from 0.545 to 1.195 GHz varying drain/source (Vids) 0.6 1.8 V...