Wojciech Dębski

ORCID: 0000-0002-5339-0300
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Research Areas
  • Radio Frequency Integrated Circuit Design
  • Seismic Imaging and Inversion Techniques
  • Microwave Engineering and Waveguides
  • earthquake and tectonic studies
  • Geophysical Methods and Applications
  • Seismology and Earthquake Studies
  • Seismic Waves and Analysis
  • Photonic and Optical Devices
  • Advanced Topology and Set Theory
  • Rock Mechanics and Modeling
  • Acoustic Wave Resonator Technologies
  • Drilling and Well Engineering
  • Homotopy and Cohomology in Algebraic Topology
  • Full-Duplex Wireless Communications
  • Spectroscopy and Laser Applications
  • Hydraulic Fracturing and Reservoir Analysis
  • Antenna Design and Optimization
  • Medical Imaging Techniques and Applications
  • High-pressure geophysics and materials
  • Terahertz technology and applications
  • 3D IC and TSV technologies
  • Geotechnical and Geomechanical Engineering
  • Earthquake Detection and Analysis
  • Computability, Logic, AI Algorithms
  • Synthetic Aperture Radar (SAR) Applications and Techniques

Polish Academy of Sciences
2011-2023

Silicon Radar (Germany)
2012-2023

Institute of Geophysics
2011-2023

Delft University of Technology
2022

University of Saskatchewan
1987-2018

Wojskowy Instytut Medycyny Lotniczej
2011

Norsar
2010

Keele University
1999

Silesian University in Opava
1991-1996

Institut de physique du globe de Paris
1992-1995

Seismic amplitude variation with offset data contain information on the elastic parameters of geological layers. As general solution inverse problem consists a probability over space all possible earth models, we look at probabilities obtained using (AVO) for different choices parameters. A proper analysis in requires nontrivial definition defining state total ignorance (seismic velocities, Lamé’s parameters, etc.). We conclude that mass density, seismic impedance, and Poisson’s ratio...

10.1190/1.1443877 article EN Geophysics 1995-09-01

The iterative design of an integrated subharmonic receiver for 120-127 GHz is presented. consists a single-ended low-noise amplifier (LNA), push-push voltage-controlled oscillator (VCO) with 1/32 divider, polyphase filter, and mixer. fabricated in SiGe:C BiCMOS technology <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fT</i> / xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> 255 GHz/315...

10.1109/jssc.2010.2051474 article EN IEEE Journal of Solid-State Circuits 2010-08-24

A 245-GHz transmitter (TX) array with an integrated antenna-array for a gas spectroscopy system has been realized. It consists of push-push VCO 1/64 frequency divider, power amplifiers, doublers, and on-chip antennas localized backside etching. The TX-frequency is tunable in the range from 238 to 252 GHz. TX-array fabricated 0.13- μm SiGe:C BiCMOS technology f T /f max 300 GHz/500 Its output approximately 7 dBm at 245 GHz, effective isotropically radiated (EIRP) reaches 18 main components...

10.1109/tthz.2015.2513278 article EN IEEE Transactions on Terahertz Science and Technology 2016-01-20

This paper presents an integrated mixed-signal 120GHz FMCW/CW radar chipset in a 0.13μm SiGe BiCMOS technology. It features on-chip MMW built-in-self-test (BIST) circuits, harmonic transceiver, software linearization (SWL) circuits and digital interface. has been tested low-cost package, where the antennas are integrated. Above 100GHz, our transceiver achieved state-ofthe-art integration level receiver linearity, DC power consumption.

10.1109/isscc.2013.6487676 article EN 2013-02-01

A 245 GHz transmitter (TX) with an integrated antenna for sensing applications has been realized, which consists of a push-push VCO 1/64 frequency divider, transformer-coupled one-stage power amplifier, doubler, and on-chip localized backside etching. The the TX is tunable by external PLL in range from 239.5 to 250.8 GHz. fabricated 0.13 μm SiGe:C BiCMOS technology f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f...

10.1109/mwsym.2013.6697430 article EN 2013-06-01

In this paper, a high-range 60-GHz monostatic transceiver system suitable for frequency-modulated continuouswave (FMCW) applications is presented. The RF integrated circuit fabricated using 0.13-μm SiGe BiCMOS technology with fT/fmax of 250/340 GHz and occupies very compact area 1.42 × 0.72 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . All the internal blocks are designed fully differential an in-phase/quadrature receiver (RX)...

10.1109/tmtt.2017.2769049 article EN IEEE Transactions on Microwave Theory and Techniques 2017-11-15

Research Article| January 01, 2010 Preliminary Analysis of the 21 February 2008 Svalbard (Norway) Seismic Sequence Myrto Pirli; Pirli NORSAR PO Box 53 N-2027, Kjeller Norway myrto.pirli@norsar.no (M. P.) 1Norwegian Array (NORSAR), Kjeller, Search for other works by this author on: GSW Google Scholar Johannes Schweitzer; Schweitzer Lars Ottemöller; Ottemöller 2British Geological Survey, Edinburgh, Scotland, U.K.; now at University Bergen, Department Earth Sciences. Mohammad Raeesi; Raeesi...

10.1785/gssrl.81.1.63 article EN Seismological Research Letters 2010-01-01

This article reports a 223–276-GHz monostatic frequency-modulated continuous-wave (FMCW) radar transceiver (TRX) chip. The TRX is suitable for building massive multiple-input multiple-output (MIMO) arrays in the daisy-chain topology because of its cascadable feature based on injection-locking feedthrough technique. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$18\times $ </tex-math></inline-formula>...

10.1109/tmtt.2023.3279872 article EN IEEE Transactions on Microwave Theory and Techniques 2023-06-09

This paper focuses on the design and measurement results of a 120 GHz monostatic transceiver system for FMCW radar applications. The fully integrated chip is fabricated using 0.13 μm SiGe BiCMOS technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> 250/340 occupies only an area 1.33×0.73mm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , With current consumption...

10.23919/eumic.2018.8539874 article EN 2018-09-01

This letter reports a compact-size 225–265 GHz quadrature receiver (RX), consisting of low-noise amplifier (LNA), power divider (PD), two down-conversion fundamental mixers, and an IQ generator, in 130-nm SiGe BiCMOS technology with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{T}/f~_{\text {max}}$ </tex-math></inline-formula> 300/500 GHz. The measured peak value the gain is 20.6 dB at 240 without IF...

10.1109/lmwc.2022.3151823 article EN IEEE Microwave and Wireless Components Letters 2022-02-24

High-performance IC-to-antenna interconnection is one of the key enablers for mass production high-end millimeter wave (mmW) radar systems above 100 GHz. In this work, a system with an on-package antenna array working at 122 GHz presented. The placed on top molded package and antenna-to-chip realized by through-polymer via (TPV) technology. detailed fabrication process antenna-in-package (AiP) TPV discussed. results from functional tests AiP are presented benchmarked to commercial quad-flat...

10.1109/tcpmt.2022.3172618 article EN IEEE Transactions on Components Packaging and Manufacturing Technology 2022-06-01

A subharmonic transceiver for sensing and imaging applications in the 122 GHz ISM band has been proposed. The receiver consists of a single-ended LNA, push-push VCO with 1/32 divider, polyphase filter, mixer. is fabricated SiGe:C BiCMOS technology fT/fmax 255GHz/315GHz. Its differential down-conversion gain 31 dB at GHz, corresponding noise figure 11 dB. 3-dB bandwidth reaches from 121 to 124 GHz. input 1-dB compression point -44 dBm. consumes 113 mA supply voltage 3.2 V.

10.1109/mwsym.2010.5517447 article EN 2011 IEEE MTT-S International Microwave Symposium 2010-05-01

A 245 GHz sensor system for gas spectroscopy is presented, which includes a SiGe receiver (RX), transmitter (TX), and 0.6 m long absorption cell between the TX RX. The integrated local oscillators of RX are controlled by two external phase locked loops (PLLs), whose reference frequencies swept with constant frequency offset low IF consists differential noise amplifier (LNA), an 122 oscillator (LO) 1/64 divider, 90° hybrid, active subharmonic mixer. LO doubler. fabricated in 0.13 µm BiCMOS...

10.1017/s1759078715000082 article EN International Journal of Microwave and Wireless Technologies 2015-02-05

A 500 GHz system for gas spectroscopy is presented, which includes an integrated SiGe 4 × 1 transmitter (TX) array, a Golay cell as detector and 1.9 m‐long absorption cell. The local oscillator (LO) of the TX array controlled by external phase‐locked loop, whose reference frequency swept. four branches involve quadruplers (x4). are fed 120 power division network, connected to LO. estimated radiated output −7 dBm at GHz. spectrum gaseous methanol shown 494–500

10.1049/el.2014.4174 article EN Electronics Letters 2015-01-23

This letter presents a 220–261-GHz frequency multiplier-by-18 chain in 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12–15, 110–135, and 216–270 GHz), two triplers (36–45 108–135 third-order Chebyshev bandpass filter modified Gilbert-cell-based doubler (216–270 GHz). The peak output power is about 8 dBm at 240 GHz with 3-dB bandwidth 41 for an input −7 dBm. unwanted harmonics are suppressed more than 25 dBc over the range interest. consumes dc current 114.7 mA from supply...

10.1109/lmwc.2022.3154352 article EN IEEE Microwave and Wireless Components Letters 2022-03-10

10.1007/s00024-009-0006-3 article EN Pure and Applied Geophysics 2009-11-24

Increasing demand for industrial radars has spurred research aimed toward designing better transceiver (TRx) integrated circuits (ICs) combined with advanced packaging technologies [1]-[6], innovative antenna concepts, very precise wirebonding schemes [5]-[8], and high-performance baseband processing systems [9]. With a well-optimized package of such products, the resulting application fields can vary from avionics robotics to automotive, monitoring, level-tracking, vital-sign-detection...

10.1109/mmm.2017.2738468 article EN IEEE Microwave Magazine 2017-10-10

A 245 GHz transmitter (TX) array with an integrated antenna-array for a gas spectroscopy system has been realized, which consists of push-push VCO 1/64 frequency divider, power amplifiers, doublers, and on-chip antennas localized backside etching. The TX-frequency is tunable in the range from 238 to 252 GHz. TX-array fabricated 0.13 μm SiGe:C BiCMOS technology fT/fmax 300GHz/500GHz. Its estimated output 7 dBm at GHz, EIRP reaches 18 includes TX receiver SiGe. sensitivity this demonstrated by...

10.1109/csics.2014.6978525 article EN 2014-10-01

The paper presents two types of 122 GHz low-noise-amplifiers (LNA) fabricated in SiGe BiCMOS technology. amplifier design takes advantage a novel transmission line structure with thick metal ground-shield on top the MMIC. circuit is two-stage cascode topology utilizing lines for input, output and inter-stage matching. amplifiers are designed high gain, minimum noise figure low power consumption. Measurements show gain 13.5 dB 9.6 at GHz. consumption 52 mW from 3.5 Volt supply. other version...

10.1109/esscirc.2009.5325945 article EN Proceedings of ESSCIRC 2009-09-01
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