The dependence of electron mobility on strain, channel direction, and substrate orientation is theoretically studied for the germanium n-channel metal-oxide-semiconductor field-effect transistors. For unstrained channel, (111) can provide highest among three orientations, mainly due to its largest quantization mass smallest conductivity in L valley. tensile strain parallel [1¯10] direction gives 4.1 times Si at 1MV∕cm, enhancement starts saturate larger than 0.5%. compressive ∼1.5%...

Raman shifts are investigated on silicon and germanium substrates under the uniaxial tensile strain various substrate orientations. The splits triply degenerate optical (LO, TO) phonons at zone center (k⃗≈0). redshifts of Si peaks induced by all orientations observed. With specific polarization incident light, however, unusual blueshifts Ge observed (110) (111) substrates. By using suitable phenomenological constants taking selection rules into consideration, experimental results in...

A continuous pilot-scale bubble-column scrubber with NaOH as the absorbent was used to explore capture of CO2 gas from a coal-fired power plant. The experimental design based on results previous study. diameter column 20 cm and height 2.4 m. According S/N ratio, parameters, including absorption rate (RA), efficiency (E), overall mass-transfer coefficient (KGa) ratio gas-liquid flow (R), were selected for Taguchi analysis obtain optimum conditions. total eleven experiments carried out verify...

One of the most promising techniques for manufacturing low-cost solar cells is a solution processing method. In this study, it proposed that solution-grown ZnO nanorods (NRs) are used as antireflection coatings on metal-insulator-semiconductor (MIS) with sol-gel SiO2. Except Al electrodes prepared by thermal evaporation, no other vacuum process was utilized during fabrication. The NRs were produced hydrothermal method and suppressed Fresnel reflection. With NRs, observed average reflectance...

The characteristics of oxides grown on silicon wafers under external mechanical stress were studied. It was found that the SiO2 films compressive had a decreased etching rate. From capacitance–voltage (C–V) measurements, it observed tensile sample reduced interface state density, while increased.

Nonconjugated polymers have been synthesized from maleic anhydride, poly(ethylene glycol), and bisphenol-diglycidyl ether without utilizing any solvent. The polymeric thin films produced by the nonconjugated were spin-coated on ITO coated glass Si substrates. Self-assembly nanoparticles (1.6-6.2 nm) are observed. It is proposed that nanoparticle constructed through a self-assembly process with bisphenol-A aggregates glycol) moieties. photoluminescence spectrum of film peaks at near 450 nm...

anhydride-poly(ethylene glycol) co-polymer (A-PEGCP) has been synthesized from maleic anhydride, poly(ethylene and bisphenol-A diglycidyl ether without using any organic solvent. The thin films produced A-PEGCP solution were spin-coated on ITO-coated glass. nanoparticles are observed in the films. It is proposed that nanoparticle built by a self-assembly process with aggregates poly (ethylene moieties. effects of concentration, thermal annealing, excitation wavelength moisture optical...

In this paper, it is reported that a metal-free and non-conjugated polymer, MA-PEG 8000-BADGE (MP8B), exhibits an antireflective property substrate-dependent photoluminescence (SDP). MP8B was constructed from maleic anhydride, poly(ethylene glycol) bisphenol-A diglycidyl ether. Self-assembled nanoparticles are found in can prospectively act as scattering centers to improve light trapping extraction. films prepared solutions have been characterized by (PL), atomic force microscopy (AFM),...

The negative and positive bias temperature instabilities are investigated on p-channel n-channel TFTs with four different combinations. stress-induced hump in the subthreshold region is observed for PBTI NBTI TFTs. attributed to edge transistors along channel width direction. Higher electric field at corners induces more trapped carriers insulator as compared transistor. In contrast, no humps For TFTs, interface traps generated by breaking Si-H bonds responsible ¿V <sub...

It is shown in this paper that a polymer, MA-PEG 1000-DGEBA (MP1D), exhibits antireflection, substrate-dependent photoluminescence (SDP), wide band-gap, and photoconduction characterization. MP1D was synthesized from maleic anhydride, polyethylene glycol 1000, bisphenol-A diglycidyl ether. Self-assembled nanoparticles embedded film ranging 2.5 to 31.6 nm are observed, which could be expected as scatterers enhance light trapping extraction. The size of the nanoparticle increases with...

The effect of oxide barrier shape change caused by stress-induced interface trap charges on the low-voltage tunneling current (LVTC) characteristics ultrathin gate (∼2 nm) is studied in this work. It was found that for an working direct regime, LVTC behavior strongly dependent oxide. After high-field stress, anomalous phenomenon observed. There invariant point existing current–voltage curves. For a bias smaller than value point, decreases with stress time. However, larger that, increases...

In this paper a-Si:H TFTs with the external mechanical strain and bending cycles is studied. addition, trap states distribution also discussed. Besides, temperature of on plastic substrate an important issue for operation. A thermal conduction layer dissipates accumulated heat during operation designed it calculates in work.

Thin oxide property in a metal–oxide–semiconductor structure subjected to substrate injection from semiconductor into is investigated by means of ramp-up and ramp-down current–voltage (I–V) measurements. Generally, gate causes catastrophic dielectric breakdown, the damaged suffers permanent destruction which exhibits resistorlike behavior I–V curve. For injection, however, there are three distinct modes existing characteristics. They resistorlike, hysteresislike, saturation, i.e., no...

It is proposed that the metal-oxide-semiconductor (MOS) solar cells with sol-gel oxides deposited by spin coating are produced in this study. This sol-gel-derived SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer not very thin and deviation thickness of slight. In general, characteristics MOS significantly affected layer. Particularly, thermal grown oxide required less than 2nm for cell applications. useful large-scale...

The carbon was incorporated in biaxial st-Si (stained Si) source/drain NMOSFET for channel strain enhancement. Due to ~52% lattice mismatch between silicon and carbon, the st-Si:C surface is under higher than that of st-Si, indicating carrier mobility can be enhanced significantly by theory. resistance with increasing are similar improved from underneath relaxed SiGe, as compared Si:C/Si.

We simulated stress components in three directions the Si channel of NMOSFETs with SiC alloy S/D stressor and tensile CESL this study. The resulting saturation drain current enhancement was analyzed. Tensile along transport direction found to dominate mobility enhancement. Stress width affect least. However, for NMOSFETs, compressive vertical perpendicular gate oxide makes considerable contribution can not be neglected. To obtain new model study, we extended a simple strain effect band,...

In this study, the characteristics of Maleic-PEGX-SR3 thin films are investigated. This film is expected to use as light emitting layer polymer editting diode (PLED). The effect solution concentration and annealing temperature on properties deposited glass examined. Thin characterized by photoluminescence (PL), scanning electron microscopy (SEM), UV-vis absorption spectrum (UV-vis), ultraviolet photoemission spectroscopy (UPS). PL spectra prepared various concentrations peak at ~ 450 nm....