A flexible version of traditional thin lead zirconium titanate ((Pb 1.1 Zr 0.48 Ti 0.52 O 3 )‐(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in arena. The PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol‐gel coating cycles required (i.e., more cost‐effective), and, fabrication wise, is suitable for further scaling lateral dimensions nano‐scale due larger feature size‐to‐depth aspect ratio (critical...

Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and Internet Things (IoT), demand for ultra-dense, ultra-low-power increasing. In this review, we present a comprehensive perspective on most notable approaches to fabrication physically flexible devices. future goal replacing traditional mechanical hard disks with solid-state storage devices, fully electronic system will need two basic devices: transistors nonvolatile memory....

Abstract To augment the quality of our life, fully compliant personalized advanced health-care electronic system is pivotal. One major requirements to implement such systems a physically flexible high-performance biocompatible energy storage (battery). However, status-quo options do not match all these attributes simultaneously and we also lack in an effective integration strategy integrate them complex architecture as orthodontic domain human body. Here show, complaint lithium-ion...

In today's traditional electronics such as in computers or mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent global made up silicon. Therefore, we have developed a generic regenerative batch fabrication process to transform wafers full into thin (5 μm), mechanically flexible, optically semitransparent fabric with devices, then recycling...

With the emergence of Internet Things (IoT), flexible high-performance nanoscale electronics are more desired. At moment, FinFET is most advanced transistor architecture used in state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) into and then conduct comprehensive electrical characterization under various bending conditions understand its performance. Our study shows that back-etch gentler than traditional...

Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, monitoring where bent or complex shaped infrastructures are common state-of-the-art rigid cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric based lead zirconium titanate as key material version bulk mono-crystalline silicon (100). The experimented...

Abstract Advanced classes of modern application require new generation versatile solar cells showcasing extreme mechanical resilience, large‐scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon‐based offer one the most highly efficient sources, but a key challenge remains to attain resilience while preserving electrical performance. A complementary metal oxide semiconductor‐based integration strategy where corrugation architecture enables ultraflexible...

Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion mechanically flexible computational systems. In this paper, we have demonstrated simple fabrication flow to build metal-insulator-metal capacitors, key components dynamic random access memory, silicon (100) fabric. We rely standard microfabrication processes release thin sheet (area: 18 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Mohamed T. Ghoneim, Casey E. Smith, Muhammad M. Hussain; Simplistic graphene transfer process its impact on contact resistance. Appl. Phys. Lett. 6 May 2013; 102 (18): 183115. https://doi.org/10.1063/1.4804642 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote...

We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built flexible silicon (100) fabric. The tests include studying effect bending radius up to 5 mm minimum with respect breakdown voltage and leakage current devices. also continuous stress over extended periods times.

Wearable electronics need miniaturized, safe, and flexible power sources. Lithium-ion battery is a strong candidate as high performance battery. The development of materials for electrodes suffers from the limited material choices. In this paper, we present integration strategy to rationally design processes report inorganic lithium-ion microbattery with no restrictions on used. shows an enhanced normalized capacity 147 μAh/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

The ability to incorporate rigid but high-performance nanoscale nonplanar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous timely challenge in enabling the production of wearable situ information-processing digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process integrate flexible, silicon-based, nanoscale, nonplanar, fin-shaped field effect transistors...

The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge building devices on structurally foldable platform high integration density. present a CMOS compatible process to demonstrate for first time memristive fabricated bulk monocrystalline silicon (100) which is next transformed into flexible thin sheet fabric all pre-fabricated devices. This preserves ultra-high density advantage unachievable other substrates. In...

In today's digital age, the increasing dependence on information also makes us vulnerable to potential invasion of privacy and cyber security. Consider a scenario in which hard drive is stolen, lost, or misplaced, contains secured valuable information. such case, it important have ability remotely destroy sensitive part device (e.g., memory processor) if not possible regain it. Many emerging materials even some traditional like silicon, aluminum, zinc oxide, tungsten, magnesium, are often...

Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates be bent rolled up, but cannot independently fixed at the rigid perpendicular position necessary realize display-integrated gadgets electronics. A reversibly bistable material assume two stable states in reversible way: flexibly state...

The state-of-the-art electronics technology has been an integral part of modern advances. prevalent rise the mobile device and computational in age information offers exciting applications that are attributed to sophisticated, enormously reliable, most mature CMOS-based electronics. We accustomed high performance, cost-effective, multifunctional, energy-efficient scaled However, they rigid, bulky, brittle. convolution flexibility stretchability for emerging Internet Everything application...

Abstract We report the inherent increase in capacitance per unit planar area of state‐of‐the art high‐ κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release‐first process. methodically study and show that our approach to transform bulk (100) into a adds an advantage enabling higher integration density dynamic random access memory (DRAM) same chip area. Our is release ultra‐thin (25 µm thick) from wafer, then build MIMCAPs using sputtered...

We report on the electrical study of high dielectric constant insulator and metal gate oxide semiconductor capacitors (MOSCAPs) a flexible ultra-thin (25 μm) silicon fabric which is peeled off using CMOS compatible process from standard bulk mono-crystalline substrate. A lifetime projection extracted statistical analysis ramping voltage (Vramp) breakdown time dependent data. The obtained MOSCAPs operational voltages satisfying 10 years benchmark are compared to those control MOSCAPs, not wafer.

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

Abstract Thermoelectric generators (TEGs) are interesting energy harvesters of otherwise wasted heat. Here, a polymer‐assisted generic process and its mechanics to obtain sputtered thermoelectric (TE) telluride material‐based 3D tubular structures with unprecedented length (up seamless 4 cm further expandable) shown. This allows for large temperature differences between the hot cold ends, critical but untapped enabler high power generation. Compared flat slab, better area efficiency is...

The SU(3) Polyakov linear-sigma model (PLSM) in mean-field approximation is utilized analyzing the chiral condensates [Formula: see text], text] and deconfinement order parameters at finite isospin asymmetry. bulk thermodynamics including pressure density, interaction measure, susceptibility second-order correlations with baryon, strange electric charge quantum numbers are studied thermal dense medium. PLSM results confronted to available lattice chromodynamics (QCD) calculations. excellent...

We present a comprehensive electrical performance assessment of hafnium silicate (HfSiO x ) high-κ dielectric and titanium nitride (TiN) metal gate integrated FinFET-based complementary─metal─oxide semiconductor (CMOS) on flexible silicon-on-insulator (SOI).The devices were fabricated using state-of-the-art CMOS technology then transformed into form by CMOS-compatible mask-less deep reactive-ion etching (DRIE) technique.Mechanical out-of-plane stresses (compressive tensile) applied along...

Pion-nucleus interactions in nuclear emulsions from 340-GeV/c ${\ensuremath{\pi}}^{\ensuremath{-}}$ H2 beam at CERN SPS are studied. The average values of produced showers $〈{n}_{s}〉$, gray $〈{n}_{g}〉$, black $〈{n}_{b}〉$, and heavily ionizing particles $〈{n}_{h}〉$ measured. Linear correlations between these numbers were obtained. Koba-Nielsen-Olesen---type scaling behavior the shower is investigated. A test collective tube model carried out. studied framework Pomeron interaction with nuclei...