A5101629480- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Organic Electronics and Photovoltaics
- Ferroelectric and Negative Capacitance Devices
- Advanced Sensor and Energy Harvesting Materials
- Organic Light-Emitting Diodes Research
- Thin-Film Transistor Technologies
- Electromagnetic wave absorption materials
- ZnO doping and properties
- CO2 Sequestration and Geologic Interactions
- Synthesis and properties of polymers
- Geological Modeling and Analysis
- Dielectric materials and actuators
- Conducting polymers and applications
- Acoustic Wave Resonator Technologies
- Gas Sensing Nanomaterials and Sensors
- Advanced ceramic materials synthesis
- GaN-based semiconductor devices and materials
- Silicon Nanostructures and Photoluminescence
Sungkyunkwan University
2004-2023
University of Seoul
2010
Abstract We report the roles of post‐deposition annealing PVP/pentacene double‐layered films on electrical properties organic thin film transistors (OTFTs). Data obtained by atomic force microscopy (AFM) and X‐ray diffraction (XRD) techniques demonstrate that both grain size (001) peak intensity pentacene increase as temperature increases, resulting in clear dendrite structure after at 100 °C N 2 ambient. These physical were also confirmed conductivity (EC) films. The OTFTs improved with...
Abstract Reducing transmission loss via composites with pores has emerged as a breakthrough method for information and communications technology applications. The super/extremely high‐frequency signals used in the technologies result significant loss. Demand low‐loss materials low dielectric constant (D k ) dissipation factor f increased recent years. Here, it is demonstrated that pore can be reduced D of (air). In fabrication composites, drop‐on‐demand (DOD) inkjet printing to fabricate...
Organic thin-film transistors were fabricated with poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and cyanoethylpullulan (CyEPL) for the dielectrics. The influence of double-organic-ferroelectric-layer structure composed all ferroelectric dielectrics below regioregular poly(3-hexylthiophene) was investigated. capacitance-voltage (C-V) hysteresis flatband-voltage shift found at −5 to +5 V, depending on field direction. A difference in transfer characteristic observed as...
DC and RF characteristics of Si/SiO2(∼4 µm)/Ti/Pt-HfO2‐Al metal–insulator–metal (MIM) devices were investigated with atomic layer-deposited (ALD) high-k HfO2 films. Excellent properties obtained compared to those using either SiO2 or Si3N4. Both high capacitance density small frequency-dependent reduction observed in the MIM capacitors, which ALD was used as an insulator.