A5029769355- Semiconductor materials and devices
- Particle physics theoretical and experimental studies
- High-Energy Particle Collisions Research
- Advancements in Semiconductor Devices and Circuit Design
- Quantum Chromodynamics and Particle Interactions
- Ferroelectric and Negative Capacitance Devices
- Advanced biosensing and bioanalysis techniques
- Thin-Film Transistor Technologies
- Molecular Junctions and Nanostructures
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic and Structural Properties of Oxides
- Advanced Memory and Neural Computing
- DNA and Nucleic Acid Chemistry
- Dark Matter and Cosmic Phenomena
- Cosmology and Gravitation Theories
- Ferroelectric and Piezoelectric Materials
- Nanowire Synthesis and Applications
- Particle Detector Development and Performance
- Catalytic Processes in Materials Science
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Nanofabrication and Lithography Techniques
- Copper Interconnects and Reliability
- Quantum Dots Synthesis And Properties
Sungkyunkwan University
2013-2023
University of Seoul
2022-2023
Yonsei University
2022
Severance Hospital
2022
Korea University
2013-2021
A. Alikhanyan National Laboratory
2011-2017
Suwon Research Institute
2014
Texas Tech University
2011-2013
European Organization for Nuclear Research
2013
Samsung Medical Center
2012-2013
Deoxyribonucleic acid (DNA) and two-dimensional (2D) transition metal dichalcogenide (TMD) nanotechnology holds great potential for the development of extremely small devices with increasingly complex functionality. However, most current research related to DNA is limited crystal growth synthesis. In addition, since controllable doping methods like ion implantation can cause fatal damage 2D TMD materials, it very hard achieve a low-level concentration (nondegenerate regime) on in present...
We report the effects of plasma process-induced damage during floating gate (FG) dry-etching process on erase characteristics NOR flash cells. As compared to cells processed in a stable condition, it is found that nonoptimized ambient show significantly degraded under negative Fowler-Nordheim (FN) bias, exhibiting fast-erasing bit distribution erased bits. However, little differences are their tunneling positive biasing. The bias polarity dependence FN indicates charges created near...
Enormous amounts of data are generated and analyzed in the latest semiconductor industry. Established yield prediction studies have dealt with one type or a dataset from procedure. However, device fabrication comprises hundreds processes, various factors affect yields. This challenge is addressed this study by using an expandable input data-based framework to include divergent adapting explainable artificial intelligence (XAI), which utilizes model interpretation modify conditions. After...
Abstract Here, we propose a novel DNA-based doping method on MoS 2 and WSe films, which enables ultra-low n- p-doping control allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal trivalent lanthanide (Ln) ions DNA nanostructures, using the newly proposed concept Co-DNA (DNA functionalized both Ln ions). The available n-doping range Ln-DNA between 6 × 10 9 2.6 cm −2 . change adjusted −1.0 −2.4 In Eu 3+ or Gd...
A surface-assisted fabrication scheme enables direct surface coverage control of functionalized DNA nanostructures on centimeter-scaled silica (SiO2) substrates from 0 to 100 % (see picture). Electrostatic interactions between the structures and lead dramatic topological changes structures, thereby creating novel formations crystals.
We have implanted vacuum evaporated cadmium sulphide (CdS) thin films with Ar+ and N+ at different doses. analysed the properties of ion-implanted CdS using x-ray diffraction, optical transmittance spectra Raman scattering, we observed formation Cd metallic clusters in films. The bandgap Ar+-doped decreased from 2.385 eV for undoped film to 2.28 maximum doping. For N+-doped 2.301 eV, whereas absorption coefficient values increased increase implantation dose. effect indium doping is also...
Next generation graphene-based electronics essentially need a dielectric layer with several requirements such as high flexibility, transparency, and low process temperature. Here, we propose investigate flexible transparent poly-4-vinylphenol poly(melamine-co-formaldehyde) (PVP/PMF) insulating to achieve intrinsic graphene an excellent gate at sub 200 °C. Chemical electrical effects of PVP/PMF on well its property are systematically investigated through various measurements by adjusting the...
Cu2+-modified DNA nanostructures are investigated using differently sized rings that composed of core and extension motifs. Chemical reduction current measurements adopted for verifying Cu2+ modification, the results provide clear evidence co-ordination in structures.
A catalytic combustible type single-chip micro gas sensor was fabricated by MEMS technology and responses with input powers methane hydrogen concentrations were characterized. The ranges of at Pt thickness 450 nm power 128 mW 1.076–2.433 mV for 2315–5787 ppm, 0.965–2.514 282–706 respectively. 150 112 0.192–0.438 ppm 0.949 to 2.496 H2 concentration ratios 3.65 mV/103 a thick heater 3.81 heater. But in the case response, response using remarkably different from CH4 3.51 mV/104 0.6 heater, From...
The Al/CeO2/Si metal–insulator–semiconductor (MIS) structure showed a capacitance–voltage (C–V) hysteresis, which could be controlled by variation of the CeO2 thickness. For sample with 3000 Å CeO2, hysteresis width as high ∼1.8 V was obtained. nonvolatile field-effect transistors, MIS reliable and controllable C–V an alternative to metal–ferroelectric–semiconductor structures containing unstable, multicomponent ferroelectric materials.
With the combination of a molecular combing technique and scanning-probe lithographic patterning, lambda-DNA's were stretched aligned to form line array structures on patterned organic monolayer surfaces. The pattern was generated by anodizing silicon surface using lithography implant polar layer in middle nonpolar layer. molecule layer, (aminopropyl)triethoxysilane (APS), has -NH(3)(+) terminal group, which interacts strongly with phosphate backbone DNA provides site for selective...
A very efficient method is introduced to selectively align and uniformly separate λ-DNA molecules thus DNA-templated gold nanowires (AuNW's) using a combination of molecular combing surface-patterning techniques. By the presented in this work, it possible obtain parallel latticed nanostructures consisting DNA AuNW's aligned at 400 nm intervals. are formed with an average height 2.5 nm. This expected hold potential for integration nanosized building blocks applicable nanodevice construction.
The HfO2/HfSixOy thin film for gate oxides in the metal-oxide-semiconductor (MOS) device is obtained by a simple method which involves oxidation of sputtered Hf metal films on Si followed N2 annealing. Based transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analyses, we found that high-quality stack layer formed Si. hysteresis window Pd–HfO2/HfSixOy–Si MOS capacitors was negligible (i.e., less than 10 mV). equivalent oxide thickness (EOT) leakage current...
We have characterized physical and electrical properties of the HfO2/HfSixOy thin film for gate oxides in metal–oxide–semiconductor device. The oxidation Hf deposited directly on Si substrate results HfSixOy interfacial layer high-k HfO2 simultaneously. Interestingly, postoxidation N2 annealing reduces (increases) thickness an amorphous (HfO2 layer). This phenomenon causes increase effective dielectric constant, while maintaining excellent properties: equivalent oxide leakage current density...
We present a fabrication of conductive nanowires made gold nanoparticle (AuNP) chains based on λ-DNA molecules immobilized surface (3-aminopropyl)triethoxysilane-coated Si wafer as the template. A tilting technique was used to align and stretch λ-DNAs surface. Aniline-capped AuNPs (AN-AuNPs) were electrostatically assembled along DNAs by careful control AN-AuNPs treatment time DNA concentration. are attached with reduction in Au potential increases. Also, interparticle spacing is dependent...