A5102833871- 2D Materials and Applications
- Perovskite Materials and Applications
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Porphyrin and Phthalocyanine Chemistry
- Advancements in Semiconductor Devices and Circuit Design
- Porphyrin Metabolism and Disorders
- Solidification and crystal growth phenomena
- Aluminum Alloy Microstructure Properties
- Molecular Junctions and Nanostructures
- Diamond and Carbon-based Materials Research
- Advanced biosensing and bioanalysis techniques
- Photonic Crystals and Applications
- DNA and Nucleic Acid Chemistry
- Microstructure and mechanical properties
- Aerospace Engineering and Control Systems
- Graphene research and applications
- Photosynthetic Processes and Mechanisms
- Advancements in Photolithography Techniques
- Rocket and propulsion systems research
- Photonic and Optical Devices
- Electron and X-Ray Spectroscopy Techniques
- Ion-surface interactions and analysis
- Advanced Photocatalysis Techniques
Sungkyunkwan University
2015-2019
Yeungnam University
2003-2004
Korea Institute of Science and Technology
2003
The effects of triphenylphosphine (PPh3)-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2) photodetector are systematically studied, very high performance WSe2/h-BN heterostucture-based is demonstrated with record photoresponsivity (1.27 × 106 A W−1) temporal photoresponse (rise time: 2.8 ms, decay 20.8 ms) under 520 nm wavelength 5 pW power laser illumination. As service to our authors readers, this journal provides supporting information supplied...
Black phosphorus (BP) is appealing as a next-generation two-dimensional (2D) van der Waals (vdW) material, but research into doping BP to optimize device performance still deficient. Here, we study n- and p-doping of variously thick (2, 4, 7, 10 nm) black films in terms the corresponding BP-based transistors photodetectors. N- were respectively achieved with 3-amino-propyltriethoxysilane (APTES) octadecyltrichlorosilane (OTS). The changed concentrations between approximately −2.1 × 1011...
In this study, a near-infrared photodetector featuring high photoresponsivity and short photoresponse time is demonstrated, which fabricated on rhenium diselenide (ReSe2) with relatively narrow bandgap (0.9-1.0 eV) compared to conventional transition-metal dichalcogenides (TMDs). The excellent photo temporal responses, generally show trade-off relation, are achieved simultaneously by applying p-doping technique based hydrochloric acid (HCl) selected ReSe2 region. Because the of originates...
Induced CD spectra of meso-tetrakis(N-methylpyridium-4-yl)porphyrin (TMPyP) complexed with d(A)12.d(T)12, d(G)12.d(C)12 duplex and d(A)12.[d(T)12]2, d(G)12.d(C)12.d(C)12+ triplex in the Soret band were compared this study. When TMPyP is duplex, a monomeric spectrum at low [TMPyP]/[oligomer] ratio was apparent, while high mixing ratio, excitonic dominant. In contrast, when triplex, disappears relatively indicating exciton formation inhibited by third strand, which located major groove. This...
Abstract Here, we report a high performance biosensor based on ( i ) Cu 2+ -DNA/MoS 2 hybrid structure and ii field effect transistor, which refer to as bio-FET, presenting sensitivity of 1.7 × 10 3 A/A. This was achieved by using DNA nanostructure with copper ions (Cu that induced positive polarity in the (receptor). strategy improved detecting ability for doxorubicin-like molecules (target) have negative polarity. Very short distance between biomolecules sensor surface obtained without...
In recent years, chemical doping based on the charge-transfer phenomenon has been actively studied for transition-metal dichalcogenide (TMD) materials owing to its simplicity and efficiency. However, these chemical-doping techniques have controlled mostly in a high-doping-concentration (degenerate) regime, consequently limiting use of TMD devices. Herein we report wide-range-controllable p-type WSe2 hydrochloric acid (HCl) treatment. The concentration was broadly between 1.67 × 1011 cm–2...
This work was supported by the Nano Materials Technology Development Program through National Research Foundation of Korea (NRF) funded Ministry Education, Science and (NRF-2015M3A7B7045490).
We investigated the effect of an electric field-based post exposure bake (EF-PEB) process on photoacid diffusion and pattern formation. To investigate control experimentally, EF-PEB processes was performed at various temperatures. Cross sectional images processed samples were obtained by scanning electron microscopy (SEM) after ion beam milling. In addition, we conducted a numerical analysis distribution with following Fick's second law compared experimental results our theoretical model....