A5100702611- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
Korea University
2016-2018
A perfect ohmic contact formation technique for low-resistance source/drain (S/D) of germanium (Ge) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed. metal–interlayer–semiconductor (M–I–S) structure with an ultrathin TiO2/GeO2 interlayer stack introduced into the scheme to alleviate Fermi-level pinning (FLP), and reduce electron Schottky barrier height (SBH). The TiO2 can FLP by preventing metal-induced gap states (MIGS) its very low tunneling resistance...
We demonstrate the contact resistance reduction for III-V semiconductor-based electrical and optical devices using interfacial dipole effect of ultrathin double interlayers in a metal-interlayers-semiconductor (M-I-S) structure. An M-I-S structure blocks metal-induced gap states (MIGS) to sufficient degree alleviate Fermi level pinning caused by MIGS, resulting reduction. In addition, ZnO/TiO2 an induce that produces Schottky barrier height (ΦB) reduction, which reduces specific resistivity...
We demonstrate a metal-interlayer-semiconductor structure for non-alloyed source/drain ohmic contact by using heavily doped ZnO. Therefore, the Fermi-level is effectively alleviated preventing metal induced gap state. Finally, we achieved ~10 5 x reduction of specific resistivity compared to metal-semiconductor contact. For this reasons, proposed promising III-V semiconductor based devices.
In this work, the plasma oxidation process is introduced into metal–interlayer–semiconductor (M–I–S) structure to reduce contact resistance of metal/n-type germanium (n-Ge) contact. The GeO x layer formed by acts as a good passivation between TiO 2 and Ge, also an additional metal induced gap states (MIGS) blocking layer. From these effects layer, M–I–S with multi-layered interlayer stack, /GeO , shows approximately four orders magnitude reverse current density improvement from M–S This...