Leyan Nian

ORCID: 0000-0002-5680-8215
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Research Areas
  • Electronic and Structural Properties of Oxides
  • Ferroelectric and Piezoelectric Materials
  • Ferroelectric and Negative Capacitance Devices
  • Membrane-based Ion Separation Techniques
  • Advanced Condensed Matter Physics
  • Advanced Memory and Neural Computing
  • Layered Double Hydroxides Synthesis and Applications
  • MXene and MAX Phase Materials
  • Microwave Dielectric Ceramics Synthesis
  • Semiconductor materials and devices
  • 2D Materials and Applications
  • Physics of Superconductivity and Magnetism
  • Nanopore and Nanochannel Transport Studies
  • Atomic and Subatomic Physics Research

Collaborative Innovation Center of Advanced Microstructures
2022-2024

Nanjing University
2023-2024

Suzhou Research Institute
2024

National Laboratory of Solid State Microstructures
2023

Abstract Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research potential device applications silicon‐based semiconductor technology. Among different types of sacrificial layers, the (Ca, Sr, Ba) 3 Al 2 O 6 compounds are most widely used can be dissolved water prepare high‐quality with clean sharp surfaces interfaces; However, typical transfer...

10.1002/adma.202307682 article EN Advanced Materials 2024-01-18

Abstract The observation of superconductivity in infinite‐layer nickelates has attracted significant attention due to its potential as a new platform for exploring high‐ T c superconductivity. However, thus far, only been observed epitaxial thin films, which limits the manipulation capabilities and modulation methods compared two‐dimensional exfoliated materials. Given exceptionally giant strain tunability stacking capability freestanding membranes, separating superconducting from as‐grown...

10.1002/adma.202402916 article EN Advanced Materials 2024-06-07

Abstract Perovskite‐oxide‐based ferroelectric tunnel junctions (FTJs) hold great potential for applications in non‐volatile memory and neuromorphic computing due to their unique properties. However, the challenges synthesizing high crystalline quality perovskite oxides directly on silicon wafer limit of these FTJs conventional Si‐based integrated circuits, let alone neural networks. Herein, oxide with an ON/OFF ratio up 1.2×10 6 , writing/erasing speed down 1 nanosecond, cycling endurance...

10.1002/adfm.202316473 article EN Advanced Functional Materials 2024-03-10

The synthesis of high-dielectric-constant (high-κ) dielectric materials and their integration with channel have been the key challenges in state-of-the-art transistor architecture, as they can provide strong gate control low operating voltage. For next-generation electronics, high-mobility two-dimensional (2D) layered semiconductors dangling-bond-free surfaces an atomic-thick thickness are being explored to achieve shorter lengths less interfacial scattering. Nowadays, high-κ dielectrics 2D...

10.1021/jacs.4c04984 article EN Journal of the American Chemical Society 2024-07-22

The observation of superconductivity in infinite-layer nickelates has attracted significant attention due to its potential as a new platform for exploring high $ \mathrm{\textit{T}}_{c} superconductivity. However, thus far, only been observed epitaxial thin films, which limits the manipulation capabilities and modulation methods compared two-dimensional exfoliated materials. Given exceptionally giant strain tunability stacking capability freestanding membranes, separating superconducting...

10.48550/arxiv.2401.15980 preprint EN arXiv (Cornell University) 2024-01-29

Two-dimensional electron gas (2DEG) at the interface of amorphous Al2O3/SrTiO3 (aAO/STO) heterostructures has received considerable attention owing to its convenience fabrication and relatively high mobility. The integration these 2DEG on a silicon wafer is highly desired for electronic applications but remains challanging up date. Here, conductive aAO/STO have been synthesized via growth-and-transfer method. A scanning transmission microscopy image shows flat close contact between STO...

10.1021/acsami.2c18934 article EN ACS Applied Materials & Interfaces 2022-11-16

Abstract High tunability of photoconductivity is highly desired for applications in optical memories, sensors, and bioelectronics. Recently, room temperature persistent (PPC) SrTiO 3 (STO) has been revealed attracted great attention. However, reversible switching the PPC STO with a large on/off ratio remains challenging to date. Here, giant switchable soft chemistry reduced reported. An initial insulator‐to‐metal transition up 7 orders magnitude observed about 5 found be reversible. Via...

10.1002/aelm.202300068 article EN cc-by Advanced Electronic Materials 2023-04-26

Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research potential device applications silicon-based semiconductor technology. Among different types of sacrificial layers, the $ \mathrm{(Ca, Sr, Ba)}_{3}\mathrm{Al}_{2}\mathrm{O}_{6}$ compounds are most widely used can be dissolved water prepare high-quality with clean sharp surfaces interfaces....

10.48550/arxiv.2307.14584 preprint EN cc-by arXiv (Cornell University) 2023-01-01
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