A5085924404- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
- Ferroelectric and Piezoelectric Materials
- Advanced Condensed Matter Physics
- Electronic and Structural Properties of Oxides
- Ferroelectric and Negative Capacitance Devices
- Physics of Superconductivity and Magnetism
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Dielectric materials and actuators
- MXene and MAX Phase Materials
- Advanced Sensor and Energy Harvesting Materials
- Iron-based superconductors research
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Topological Materials and Phenomena
- 2D Materials and Applications
- Magnetic properties of thin films
- Perovskite Materials and Applications
- Cancer-related molecular mechanisms research
- Quantum and electron transport phenomena
- Dielectric properties of ceramics
- Advanced Thermoelectric Materials and Devices
- Circular RNAs in diseases
- MicroRNA in disease regulation
University of Science and Technology of China
2016-2025
Petronas (Malaysia)
2025
Hebei Medical University
2014-2024
Second Hospital of Hebei Medical University
2014-2024
Hefei National Center for Physical Sciences at Nanoscale
2014-2023
University of Nebraska–Lincoln
2016-2023
Chinese Academy of Sciences
2013-2023
Central South University
2021
Collaborative Innovation Center of Advanced Microstructures
2016-2018
Pennsylvania State University
2011-2017
Abstract Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a performance memristor based on Ag/BaTiO 3 /Nb:SrTiO ferroelectric tunnel junction (FTJ) fastest operation speed (600 ps) highest number states (32 or 5 bits) per cell among reported FTJs. The sub-nanosecond resistive switching maintains up to 358 K, write current is as 4 × 10 A cm −2 . functionality spike-timing-dependent...
Abstract Polymer‐based dielectric materials play a key role in advanced electronic devices and electric power systems. Although extensive research has been devoted to improve their energy‐storage performances, it is great challenge increase the breakdown strength of polymer nanocomposites terms achieving high energy density good reliability under voltages. Here, general strategy proposed significantly storage by adding negatively charged Ca 2 Nb 3 O 10 nanosheets. A dramatically enhanced...
Supercritical relaxor nanograined ferroelectrics are demonstrated for high-performance dielectric capacitors, showing record-high overall properties of energy density ≈13.1 J cm-3 and field-insensitive efficiency ≈90% at ≈74 kV mm-1 superior charge-discharge performances high power ≈700 MW , discharge ≈6.67 ultrashort time <40 ns 55 . Ex/in situ transmission electron microscopy, Raman spectroscopy, synchrotron X-ray diffraction provide clear evidence the supercritical behavior in...
The rapid development of neuro-inspired computing demands synaptic devices with ultrafast speed, low power consumption, and multiple non-volatile states, among other features. Here, a high-performance device is designed established based on Ag/PbZr0.52Ti0.48O3 (PZT, (111)-oriented)/Nb:SrTiO3 ferroelectric tunnel junction (FTJ). advantages (111)-oriented PZT (~1.2 nm) include its switching dynamics, ultrafine domains, small coercive voltage. FTJ shows high-precision (256 8 bits), reproducible...
The developments of next-generation electric power systems and electronics demand for high temperature (≈150 °C), energy density, efficiency, scalable, low-cost polymer-based dielectric capacitors are still scarce. Here, the nanocomposites based on polyimide-poly(amic acid) copolymers with a very low amount boron nitride nanosheets designed synthesized. Under actual working condition in hybrid vehicles 200 MV m-1 150 °C, density 1.38 J cm-3 an efficiency higher than 96% is achieved. This...
Abstract Polymer dielectric capacitors are fundamental in advanced electronics and power grids but suffer from low energy density, hindering miniaturization of compact electrical systems. It is shown that high‐energy strong penetrating γ‐irradiation significantly enhances capacitive storage performance polymer dielectrics. γ‐irradiated biaxially oriented polypropylene (BOPP) films exhibit an extraordinarily high density 10.4 J cm −3 at 968 MV m −1 with efficiency 97.3%. In particular, 4.06...
The big data era requires ultrafast, low-power, and silicon-compatible materials devices for information storage processing. Here, ferroelectric tunnel junctions (FTJs) based on SiO
Solid-state dielectric film capacitors with high-energy-storage density will further promote advanced electronic devices and electrical power systems toward miniaturization, lightweight, integration. In this study, the influence of interface thickness on energy storage properties SrTiO3 (STO) films grown La0.67Sr0.33MnO3 (LSMO) electrode are systematically studied. The cross-sectional high resolution transmission electron microscopy reveals an ion interdiffusion layer oxygen vacancies at...
Flexible ferroelectric devices have been a hot-spot topic because of their potential wearable applications as nonvolatile memories and sensors. Here, high-quality (111)-oriented BiFeO3 films are grown on flexible mica substrates through an appropriate design SrRuO3/BaTiO3 double buffer layers. exhibits the largest polarization (saturated Ps ≈ 100 μC/cm2, remnant Pr 97 μC/cm2) among all reported films, is very stable in 104 bending cycles under 5 mm radius. Accordingly, memristor behaviors...
High-temperature dielectric energy-storage properties are crucial for polymer-based capacitors harsh environment applications. However, biaxially oriented polypropylene (BOPP), a state-of-the-art commercial capacitor dielectric, can work only below 105 °C. Here, we present versatile method to enhance its working temperature by depositing alumina (Al2O3) layers onto BOPP films via magnetron sputtering. Compared with pure film, the sandwiched Al2O3/BOPP/Al2O3 structure shows higher constant,...
Polymer dielectrics with high operation temperature (∼150 °C) and excellent capacitive energy storage performance are vital for electric power systems advanced electronic devices. Here, a very convenient competitive strategy by preparing ultraviolet-irradiated cyclic olefin copolymer films is demonstrated to be effective in improving the at temperatures. Compared unirradiated film, irradiated exhibit higher dielectric constant, breakdown strength stronger mechanical properties as result of...
Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-growing demands for nonvolatile data storage in wearable electronic devices. Here, high-quality flexible Hf0.5Zr0.5O2 membranes robust ferroelectricity were fabricated on inorganic pliable mica substrates via an atomic layer deposition technique. The thin a thickness of ∼8 nm exhibit high remanent polarization ∼16 μC/cm2, which possess very switching endurance (>1010 cycles, two orders magnitude better than...
Titanium oxides have many fascinating optical and electrical properties, such as the superconductivity at 2.0 K in cubic titanium monoxide TiO polycrystalline bulk. However, lack of single crystals or epitaxial films has prevented systematic investigations on its superconductivity. Here, we report basic characterizations epitaxially grown (0001)-oriented Al2O3 substrates. The magnetic electronic transport measurements confirmed that is a type-II superconductor record high Tc about 7.4 K....
Abstract The Fe(II) spin crossover complex [Fe{H 2 B(pz) } (bipy)] (pz = pyrazol‐1‐yl, bipy 2,2′‐bipyridine) can be locked in a largely low‐spin‐state configuration over temperature range that includes temperatures well above the thermal of 160 K. This locking state is achieved for nanometer thin films this two distinct ways: through substrate interactions with dielectric substrates such as SiO and Al O 3 , or powder samples by mixing strongly dipolar zwitterionic p ‐benzoquinonemonoimine C...
Abstract Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization detection of the valley degree freedom in valleytronics. However, a conventional monolayer lacks these coexisting due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism photoluminescence (PL) could be achieved (Co, Cr)-incorporated single MoS 2 , where interaction is activated by Co ions, nonradiative recombination...
Brain-inspired computing architectures attempt to emulate the computations performed in neurons and synapses human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating memristor behaviors a La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junction, it was found that ferroelectric domain dynamics characteristics influenced by relative magnetization alignment of electrodes, interfacial spin polarization is...
Ferroelectric tunnel junctions (FTJs) as the artificial synaptic devices have been considered promising for constructing brain-inspired neuromorphic computing systems. However, memristive synapses based on flexible FTJs rarely studied. Here, we report a FTJ memristor grown mica substrate, which consists of an ultrathin ferroelectric barrier BiFeO3, semiconducting layer ZnO, and electrode SrRuO3. The obtained exhibits stable voltage-tuned multi-states, resistive switchings are robust after...
Abstract We report that continuous MOF films with highly controlled thickness (from 44 to 5100 nm) can be deposited over length scales greater than 80 centimeters by a facile, fast, and cost‐effective spray‐coating method. Such success relies on our discovery of unprecedented perfectly dispersed colloidal solutions consisting amorphous nanoparticles, which we adopted as precursors readily converted the crystalline upon low‐temperature in situ heating. The allow for fabrication compact...
The commercial capacitor using dielectric biaxially oriented polypropylene (BOPP) can work effectively only at low temperatures (less than 105 °C). Polyphenylene oxide (PPO), with better heat resistance and a higher constant, is promising for capacitors operating elevated temperatures, but its charge–discharge efficiency (η) degrades greatly under high fields 125 °C. Here, SiO2 layers are magnetron sputtered on both sides of the PPO film, forming composite material SiO2/PPO/SiO2. Due to wide...
Abstract Perovskite‐oxide‐based ferroelectric tunnel junctions (FTJs) hold great potential for applications in non‐volatile memory and neuromorphic computing due to their unique properties. However, the challenges synthesizing high crystalline quality perovskite oxides directly on silicon wafer limit of these FTJs conventional Si‐based integrated circuits, let alone neural networks. Herein, oxide with an ON/OFF ratio up 1.2×10 6 , writing/erasing speed down 1 nanosecond, cycling endurance...
Abstract Ferroic‐order‐based devices are emerging as alternatives to high density, switching speed, and low‐power memories. Here, multi‐nonvolatile resistive states with a speed of 6 ns write current density about 3 × 10 A cm −2 demonstrated in crossbar‐structured memories based on all‐oxide La 0.7 Sr 0.3 MnO /BaTiO /La multiferroic tunnel junctions. The tunneling function voltage pulse duration time, associated the ferroelectric domain reversal dynamics, is ruled by...