A5038569270- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Luminescence Properties of Advanced Materials
- Perovskite Materials and Applications
- Transition Metal Oxide Nanomaterials
University of Science and Technology of China
2023-2024
Shaanxi Normal University
2024
The big data era requires ultrafast, low-power, and silicon-compatible materials devices for information storage processing. Here, ferroelectric tunnel junctions (FTJs) based on SiO
The endurance degradation of HfO2-based ferroelectric films limits their development toward practical applications. In this work, we systematically investigate the properties Hf0.5Zr0.5O2 (HZO) film under various pulse voltages and widths, it is found that fatigue severity increases first then decreases with increasing voltage or width. nonmonotonic trend explains controversial results in literature both faster slower fatigues were observed HZO. Accordingly, low ±1.6 V/100 ns are applied for...
The recent discovery of ferroelectricity in pure ZrO2 has drawn much attention, but the information storage and processing performances ferroelectric ZrO2-based nonvolatile devices remain open for further exploration. Here, a (∼8 nm)-based capacitor using RuO2 oxide electrodes is fabricated, orthorhombic phase evolution under electric field cycling studied. A remnant polarization (2Pr) >30 μC/cm2, leakage current density ∼2.79 × 10–8 A/cm2 at 1 MV/cm, estimated retention >10 years are...
To propel the miniaturization of dynamic random access memories (DRAM), obtaining capacitor dielectric materials lower equivalent oxide thickness (EOT) and leakage is essential. Herein, we demonstrate a CMOS compatible (complementary metal-oxide-semiconductor) post-processing method for HZO-based metal-insulator-metal (MIM) capacitors, namely, low-temperature annealing combined with electric field (E-field) cycling. The process induces crystallization material, while subsequent E-field...
The emergence of complementary metal-oxide semiconductor (CMOS)-compatible HfO2-based ferroelectric materials provides a promising way to achieve field-effect transistors (FeFETs) with steep subthreshold swing (SS) reduced below the Boltzmann thermodynamics limit (∼60 mV/dec at room temperature), which has important implications for lowering power consumption. In this work, metal-oxide-semiconductor transistor (MOSFET) is connected Hf0.5Zr0.5O2 (HZO)-based capacitors different capacitances....
The efficiency of silicon solar cells is still lower than theoretical values, partly due to their inability utilize the ultraviolet and infrared portions spectrum. Herein, a novel method using KCa