A5007930789- CCD and CMOS Imaging Sensors
- Advanced Optical Sensing Technologies
- Advanced Fluorescence Microscopy Techniques
- Image Processing Techniques and Applications
- Infrared Target Detection Methodologies
- Advanced Memory and Neural Computing
- Analytical Chemistry and Sensors
- Neuroscience and Neural Engineering
- Integrated Circuits and Semiconductor Failure Analysis
- Analog and Mixed-Signal Circuit Design
- Photoacoustic and Ultrasonic Imaging
- Thin-Film Transistor Technologies
- Landfill Environmental Impact Studies
- Geotechnical Engineering and Soil Stabilization
- Optical Systems and Laser Technology
- EEG and Brain-Computer Interfaces
- Non-Invasive Vital Sign Monitoring
- Geotechnical Engineering and Underground Structures
- Digital Holography and Microscopy
- Advanced MEMS and NEMS Technologies
- ECG Monitoring and Analysis
- Sparse and Compressive Sensing Techniques
- Force Microscopy Techniques and Applications
- Radiation Detection and Scintillator Technologies
- Quantum Dots Synthesis And Properties
Samsung (South Korea)
2020-2022
Shizuoka University
2011-2019
Hamamatsu University
2016
Japan Society for the Promotion of Science
2014
Institute of Electronics
2011-2013
Kyungpook National University
2008-2009
Korea Fisheries Resources Agency
2004-2007
A low temporal noise and high dynamic range CMOS image sensor is developed. 1Mpixel with column-parallel folding-integration cyclic ADCs has 80μV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</sub> (1.2e <sup xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> ) noise, 82 dB using 64 samplings in the ADC mode. Very variable gray-scale resolution of 13b through 19b attained by changing number pixel outputs. The implemented a 0.18-μm...
A low temporal read noise and high conversion gain reset-gate-less CMOS image sensor (CIS) has been developed demonstrated for the first time at photoelectron-counting-level imaging. To achieve a pixel without fine or special processes, proposed two unique structures: 1) coupling capacitance between transfer gate floating diffusion (FD) 2) reset FD, removing parasitic capacitances around FD node. As result, CIS with pixels is able to of 220 μV/e <sup...
Ultrasensitive, rapid and selective diagnostic probes are urgently needed to overcome the limitations of traditional for norovirus (NV). Here, we report detection NV genogroup II via nucleic acid hybridization technology using a quantum dot (QD)-conjugated molecular beacon (MB) probe. To boost sensitivity MB assay system, an ultrasensitive QD fluorophore with unique optical properties was synthesized, characterized exploited as fluorescence signal generator. Alloyed thioglycolic (TGA)-capped...
A 1.3-megapixel CMOS image sensor (CIS) with digital correlated double sampling and 17-b column-parallel two-stage folding-integration/cyclic analog-to-digital converters (ADCs) is developed. The has 0.021-e <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</sub> <sup xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> vertical fixed pattern noise, 1.2-e pixel temporal 85.0-dB dynamic range using 32 samplings in the folding-integration ADC...
A CMOS lock-in pixel image sensor with embedded storage diodes and lateral electric field modulation (LEFM) of photo-generated charge is developed for fluorescence lifetime imaging. The time-resolved (CIS) twotap pixels achieves a very high time resolution 10 ps when images are averaged over 30 frames, short intrinsic response 180 at 374 nm, low temporal random noise 1.75e <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> <sub...
In the work described in this paper, an image reproduction scheme with ultra-high-speed temporally compressive multi-aperture CMOS sensor was demonstrated. The captures object by compressing a sequence of images focal-plane random-coded shutters, followed reconstruction time-resolved images. Because signals are modulated pixel-by-pixel during capturing, maximum frame rate is defined only charge transfer speed and can thus be higher than those conventional cameras. optical efficiency...
A programmable sub-nanosecond time-gated four-tap CMOS lock-in pixel (LIP) image sensor that uses an in-pixel pulse generator (PG) is developed for time-resolved (TR) biomedical imaging applications, such as a fluorescence lifetime microscopy (FLIM). We demonstrate the system's effectiveness with simulations and measurements. Using pixel-level PG circuits, very narrow time windows (TWs) are less than 0.8 ns can be used charge modulation. This rapid gating allows weak signals from living...
This article presents a low random noise, low-power, and high-speed 2-mega pixels (Mp) global-shutter (GS)-type CMOS image sensor (CIS) using an advanced dynamic access memory (DRAM) technology. GS CIS is one of the alternatives to solve distortion issues caused by conventional rolling-shutter (RS) operation, since 2-D data can be simultaneously sampled in-pixel analog memory. To achieve high-performance CIS, we proposed novel architecture for digital pixel (DPS) which operation with...
Controlling and engineering the particle composition of semiconductor alloys is one topmost targets in field materials science technology. Quantum dot (QD) nanocrystals offer an unmatched opportunity to obtain a wide range composition-controlled have captivated great deal interest recently. Herein, we report on band gap via tuning controlling sulphur molar fraction (ternary shell layer) quaternary/ternary core/shell alloyed CdZnSeS/ZnSeS QDs. Varying optical properties were exhibited by QDs...
An extremely low temporal noise and wide dynamic range CMOS image sensor is developed using low-noise transistors high gray-scale resolution (17b) folding-integration/cyclic analog-to-digital converter (ADC). Two types of pixel are designed. One a conversion gain (HCG) with removing the coupling capacitance between transfer gate floating diffusion, other for (WDR) imager native transistor as source follower amplifier. The that in combination proposed pixels performance column ADC has...
Ultra-high-speed cameras are a powerful tool for biology as well physics and mechanics to analyze the process of ultra-high-speed phenomena. The frame rate state-of-the-art burst-readout silicon imagers has reached approximately 20Mfps [1,2]. To observe faster phenomena such plasma generation in laser processing, state electrons chemical reaction, so on, much desired. There several factors that prevent speed-up imager: high gate control voltages power dissipation high-efficiency multi-stage...
This paper discusses the noise reduction effect of multiple-sampling-based signal readout circuits for implementing ultra-low-noise image sensors. The correlated multiple sampling (CMS) technique has recently become an important technology high-gain column in low-noise CMOS sensors (CISs). reveals how CMS circuits, together with a pixel having high-conversion-gain charge detector and transistor, realizes deep sub-electron read levels based on analysis components chain from to...
As the automotive and AI industries are expanding rapidly, global-shutter (GS) image sensors playing a more significant role in perception system. More specifically, GS required various fields involving IR, including face-ID mobile devices, driver monitoring system applications, factory automation. necessary for these applications because they can capture freeze-frame images without motion distortion due to their advantage pixel operation method. The simultaneous exposure in-pixel storing...
This paper presents a low-random noise of 2.6 e-rms, low-power 116.2 mW at video rate, and high-speed up to 960 fps 2-mega pixels global-shutter type CMOS image sensor (CIS) using an advanced DRAM technology. To achieve high performance CIS, we proposed novel architecture for the digital pixel which is remarkable operation CIS with pixel-wise ADC in-pixel memory. Each has two small-pitch Cu-to-Cu interconnectors wafer-level stacking, pitch each unit less than 5 μm world's smallest embedding...
Low-noise CMOS image sensors (CIS) employing column-parallel amplifiers that significantly reduce temporal noise, as well electron-multiplication CCD (EM-CCD) are becoming popular for very-low-light-level imaging. This paper presents a ADC imagers using successive operation of folding-integration (FI-ADC) and cyclic attaining very low high gray-scale resolution resulting wide dynamic range.
A CMOS image sensor with a low dark current and high sensitivity is developed shallow trench isolation (STI) less shared pixel. By sharing in-pixel transistors, such as the reset transistor, select source follower amplifier, each pixel achieves fill factor of 43% 144.6 ke <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> /lx · s. In addition, compared conventional which has STI structure in for isolation, relatively 104.5 e /s/pixel...
Fluorescence-based time-resolved (TR) analysis techniques are fundamental and effective methods in life science medicine. Among others, fluorescence lifetime imaging microscopy (FLIM) is one of the representative measurement for biomedical applications. Recently, advanced all-solid-state devices FLIM, e.g., a CCD with optional electron-multiplication (EM) readout, single-photon avalanche diode (SPAD), TR CMOS image sensor (CIS), have been reported [1-3]. These can be implemented compactly...
In the past several years, CMOS image sensors (CISs) with sub-single-electron noise level, particularly, deep sub-electron read (less than 0.5e-rms), have been reported. Such an ultra-low level is realized a reduced floating diffusion (FD) node capacitance for attaining high pixel conversion gain (CG) [1,2], and high-gain readout circuitry noise-reduction capabilities [3,4]. Recently, reset-gate-less (RGL) sensor has reported [5]. It shows excellent performance using optimized structure CG...
Fluorescence lifetime imaging microscopy (FLIM), which is a nondestructive and minimally invasive manner can therefore be applied to living cells tissues, great analysis tool in fundamental physics as well the life sciences. Charge-coupled devices (CCDs) [1] single-photon avalanche diodes (SPADs) [2,3] are used for time-resolved measurement. In particular, SPAD-based imagers have high sensitivity good noise robustness. However, they consist of SPAD array with pixel circuitry, time-to-digital...
A low-noise high-sensitivity CMOS image sensor (CIS) for scientific use is developed and evaluated. The prototype contains 1024(H) × 1024(V) pixels with high performance column-parallel ADCs. measured maximum quantum efficiency (QE) 57 % at 660 nm long-wavelength sensitivity also enhanced a large sensing area the optimized process. In addition, dark current 0.96 pA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> 292 K, temporal random...
Abstract This paper presents the design and implementation of a time-resolved CMOS image sensor with high-speed lateral electric field modulation (LEFM) gating structure for time domain fluorescence lifetime measurement. Time-windowed signal charge can be transferred from pinned photodiode (PPD) to storage diode (PSD) by turning on pair transfer gates, which are situated beside channel. Unwanted drained PPD drain another gates. The pixel array contains 512 (V) × 310 (H) pixels 5.6 µm 2 size....
This paper presents a time-resolved (TR) CMOS image sensor (CIS) using two-tap near-infrared (NIR) lock-in pixels with background light (BGL) cancelling capability for remote heart rate (HR) detection. Aimed to the application, features 1024 (V) x 1280 (H) spatial resolution 412 (V)x region-of-interest-readout (ROI-readout) at 30 fps, high sensitivity of 134.8 ke <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> /lux · s, and an ultralow...
Multi-beam confocal microscopy without any physical pinhole was demonstrated. As a key device, custom CMOS image sensor realizing focal-plane array effect by special pixel addressing and discarding of the unwanted photocarriers developed. The axial resolution in mode measured FWHM for planar mirror 8.9 μm, which showed that confocality has been achieved with proposed sensor.