A5020673136- Nuclear reactor physics and engineering
- Nuclear Physics and Applications
- Radiation Detection and Scintillator Technologies
- GaN-based semiconductor devices and materials
- Nuclear Materials and Properties
- Radiation Effects in Electronics
- Semiconductor Quantum Structures and Devices
- Graphite, nuclear technology, radiation studies
- Nuclear and radioactivity studies
- Advancements in Semiconductor Devices and Circuit Design
- Fusion materials and technologies
- Magnetic confinement fusion research
- Perovskite Materials and Applications
- Photocathodes and Microchannel Plates
- Advanced Battery Technologies Research
- Nuclear Engineering Thermal-Hydraulics
- Rocket and propulsion systems research
- Atomic and Subatomic Physics Research
- Molten salt chemistry and electrochemical processes
- Advanced Semiconductor Detectors and Materials
- High Temperature Alloys and Creep
- Chalcogenide Semiconductor Thin Films
- Internet of Things and Social Network Interactions
- Ga2O3 and related materials
- 2D Materials and Applications
Oak Ridge National Laboratory
2018-2024
National Technical Information Service
2022-2023
Office of Scientific and Technical Information
2022-2023
The Ohio State University
2012-2019
Idaho National Laboratory
2019
Balanced carrier diffusion in perovskites The efficient operation of solar cells based on inorganic-organic requires balanced transport positive and negative charge carriers over long distances. Dong et al. used a top-seeded solution growth method to obtain millimeter-scale single crystals the organolead trihalide perovskite CH 3 NH PbI . Under low light illumination, electron hole lengths exceeded mm, under full sunlight they 175 µm. Science , this issue p. 967
With the largest band gap energy of all commercial semiconductors, GaN has found wide application in making optoelectronic devices. It also been used for photodetection such as solar blind imaging well ultraviolet and even X-ray detection. Unsurprisingly, appreciable advantages over Si, amorphous silicon (a-Si:H), SiC, SiC (a-SiC), GaAs, particularly its radiation hardness, have drawn prompt attention from physics, astronomy, nuclear science engineering communities alike, where...
An alpha-particle detector was fabricated using a freestanding n-type bulk GaN wafer with Au/Ni/GaN sandwich Schottky structure. Current–voltage measurements at room temperature revealed contact leakage current of 7.53±0.3 nA reverse bias 200 V. The had large depletion depth that can capture much the energy from 5.486 MeV alpha particles emitted 241Am source. resolution its spectrum improved to 2.2±0.2% under 550 This superior attributed shortening carrier transit time and deposition within...
An alternative target design with potential improvements, including a major increase in 238Pu production rate and annual capacity; fewer targets to be fabricated, irradiated, processed; significant replacement of large volume caustic-nitrate, aluminum-bearing radioactive liquid waste smaller solid metal waste, has been conceived evaluated using reactor physics thermal-hydraulic analyses. The uses pressed pellets 237NpO2, sintered 92% 93% theoretical density, stacked inside Zircaloy-4...
GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding wafer with guard ring structure. The irradiated neutron fluences up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> n/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . current-voltage relation, capacitance-voltage charge collection efficiency, and alpha particle spectrum before after irradiation measured characterize the resistance of devices....
This work describes the measurement of change in current two types Li-ion batteries, both commercial off-the-shelf and in-house-assembled coin cells, under radiation exposure. The discharging batteries were irradiated with a neutron beam 30-mm diameter (adjustable to 10 mm 5 mm) using Ohio State University Research Reactor was measured for electric Keithley SourceMeter. We have observed an increase when exposed gamma rays decrease only thermal neutrons applied. discussed mechanisms that are...
Neutron depth profiling (NDP) is a mature, nondestructive technique used to characterize the concentration of certain light isotopes in material as function by measuring residual energy charged particles neutron induced reactions. Historically, NDP has been performed using single detector, resulting low intrinsic detection efficiency, and limiting largely high flux research reactors. In this work, we describe new instrument design with higher efficiency way spectrum summing across multiple...
A novel capsule design has been developed for measurement of irradiation creep in pressurized tubes and is being used to irradiate reduced activation ferritic/martensitic F82H steel test specimens. These tests are conducted the flux trap High Flux Isotope Reactor at Oak Ridge National Laboratory. The uses a tight-fitting corrugated aluminum foil placed center vanadium alloy holder conduct heat from centrally located specimen. acts as compressible thermal interface between tube holder,...
GaN Schottky diode radiation detectors were fabricated on a 450-μm freestanding wafer with guard ring structure. The irradiated neutron fluences up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> n/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . current-voltage relation, capacitance-voltage charge collection efficiency, and alpha particle spectrum before after irradiation measured characterize the resistance of devices....