A5028797105- Semiconductor materials and interfaces
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- Conducting polymers and applications
- Semiconductor materials and devices
- Organic Electronics and Photovoltaics
- Vascular Malformations and Hemangiomas
- Transition Metal Oxide Nanomaterials
- Linguistics and Cultural Studies
- Ear and Head Tumors
- Copper-based nanomaterials and applications
- Cultural and Sociopolitical Studies
- Tumors and Oncological Cases
- Turkish Literature and Culture
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Photonic and Optical Devices
- Electric Power Systems and Control
- Advanced Power Generation Technologies
- Organic Light-Emitting Diodes Research
- Mechanical Engineering and Vibrations Research
Giresun University
2020-2024
Abstract In this paper, we present a comprehensive comparison study between p - n and i vertical diodes employing diverse heterojunction configurations under dark conditions. The are fabricated utilizing -PMItz as the organic semiconductor layer interfacing with different inorganic substrates, including -Si (n-type silicon), -4HSiC ( -type 4H silicon carbide), incorporating an intrinsic SiO 2 (silicon dioxide) in -PMItz/ -SiO / ++ configuration. current–voltage dielectric characteristics...
A novel phenanthroimidazole derivative with p-type conductivity was prepared and fabricated as a heterostructure, exhibiting negative differential resistance photodiode properties.
Abstract The aim of this work is to provide an alternative optoelectronic devices that use carbon and organic materials. To achieve this, we coated a modified MnPc semiconductor compound onto graphite-like (GC) thin film using the thermal evaporation technique, fabricated organic-based, highly light-sensitive MnPc/GC hybrid heterojunction. heterojunction had transmittance approximately 60% in visible region, absorption coefficient ∼10 6 m −1 , energy band gap 2.6 eV. Subsequently, Ag...
Abstract The electrochemical deposition technique was employed to grow 1% and 3% Cu-doped ZnO nanorods on glass/ITO substrate. Then, coronene nanowire deposited the surfaces via thermal evaporation as an interfacial layer of hybrid heterojunctions. Structural analyses different ratios layers revealed that they contain ZnO, CuZn, Cu 2 O 16 14.15 phases, further a monoclinic crystal structure could be detected from XRD spectrum ITO/coronene thin film. elemental composition the1% investigated...
n-tipi %1.5 Ge katkılı WOx tabakası Al/p-tipi Si üzerine Fiziksel Buhar Biriktirme (FBB) yöntemi kullanılarak büyütülmüştür ve Al/Si/WOx(%1.5Ge) p-n eklemi elde edilmiştir. İnce film tabakasının yüzey özellikleri SEM ile incelenmiş tabakanın genel olarak pürüzsüz bir yapıya sahip olduğu görülmüştür. Ayrıca tabakayı oluşturan elementlerin dağılımı Enerji dağılımlı X-ray spektroskopisi (EDX) %96.4 W, %2.2 O oranlarında homojen şekilde dağılım gösterdikleri Üretilen heteroeklemin elektriksel...
Bu çalışmada, yarıiletken metal oksit ZnO bileşiği elektrokimyasal kaplama yöntemi kullanılarak cam/ITO üzerine büyütülmüştür. Daha sonra C24H12 organik katmanı termal buharlaştırma yöntemiyle cam/ITO/ZnO ekleminin kaplanmıştır ve cam/ITO/ZnO/C24H12 çoklu heteroeklemi üretilmiştir. Üretilen tabakaların yüzeysel analizi taramalı elektron mikroskobu (SEM) ile yapılmış, tabakasının nanopul (nanoflake) nanoçubuk, nanotel şeklinde büyüdüğü görülmüştür. Ayrıca elementel dağılımı Enerji dağılımlı...
The InSe thin film was successfully grown on a glass/GaSe substrate using the modified chemical bath deposition (M-CBD) method and group annealed one hour at 80 °C in atmospheric conditions. energy band gap (Eg) values of as-deposited films were defined 1,89 eV 1,15 eV, respectively. transmitance (%) asigned %0.65, %4.46 %11,02, %10,35 400 700 nm, I-V characteristics device different temperatures examined, resistivity decreased conductivity increased with increasing temperature. activation...
Mixed-phased InxSey thin film containing InSe, In2Se3 and In6Se7 phases was prepared by M-CBD method characterized X-ray diffraction, AFM, optical spectroscopy J-V measurements. Structural, electrical conductance properties were modified annealing the films at different temperatures. Optical morphological also investigated dependently on temperature concentration of cationic precursor solution. It has been observed with that, compositions changed, particle sizes increased, energy band gaps...
In this study, CdO and CdAlO thin films were produced using a single-step electrochemical deposition method, their basic optical parameters compared. Optical analysis was performed in the wavelength range of 300-700 nm. As result analysis, it observed that film more transparent at higher wavelengths had absorption capacity lower compared to film. The maximum transmittance (T%) 43% for 55% At 300 nm, reflection (R%) value 6.5%, while R% 7.5%. coefficient (α) 1.9x10⁶ m⁻¹, α 2.9x10⁶ m⁻¹....
In this study, an InSe thin film layer was deposited onto a CdS produced via the chemical bath deposition (CBD) method using Successive Ionic Layer Adsorption and Reaction (SILAR) technique. The heterojunction devices were divided into two groups, one group annealed in ambient atmosphere at 80°C for 1 hour. electrical characterization of both performed dark under illumination intensity 100 mW/cm². fundamental diode parameters (n, ϕb, Rs, I0)were analyzed different methods. Furthermore, key...
CdSe and CdS thin films, one of the II-VI group semiconductor compounds, were successfully grown by electrochemical deposition method using low concentrations precursor solutions.Optical properties fabricated films investigated in 300 -850 nm wavelength range.The absorption coefficients found to be as 5.8 x 10 5 m -1 8.9 6 , respectively, direct energy band gaps these determined 2.72 eV 2.75 eV.While average transmission value was 85%, that 8%.Additionally, extinction coefficient values...
On a series of annealed and unannealed InSe thin films which were formerly produced by electrochemical deposition method, organic PMItz semiconductor compound was growth physical vapour (PVD) method. Structural analyses the carried out X-ray diffractometry (XRD) method revealed that glass/ITO/InSe film formed in hexagonal phase while glass/ITO/InSe(annealed) monoclinic In6Se7 orthorombic In4Se3 phases. Surface layers forming heterojunction conducted atomic force microscoby (AFM) it is...