We demonstrated a repetition-rate-tunable self-mode-locked optically pumped semiconductor disk laser (OP-SDL). The highest repetition rate of mode-locked pulses was 6.13 GHz. When using an output mirror with radius curvature 300 mm, the tuning range from 0.6 GHz to 4.35 replaced by 50 3.13 entire process continuous, and OP-SDL always in stable working state. To best our knowledge, this is first work obtain tunable OP-SDLs. 3.75 maximum at present.

Few-layer graphitic carbon nitride (g-C3N4) nanosheets were fabricated and utilized as a saturable absorber for mode-locking in an Er-doped fiber laser with net normal dispersion. The g-C3N4/polyvinyl alcohol (PVA) hybrid-film-based has modulation depth of 4.01% saturation intensity 7.5 MW/cm2. By integrating g-C3N4-PVA mode-locker into the cavity, mode-locked operation could be obtained. achieved pulse centered at 1530.3 nm width 530 ps. Its repetition rate is 40.8 MHz, corresponding...

A 1.3 GHz repetition rate optically pumped passively mode-locked semiconductor disk laser with 5.5 ps pulse duration and 204 mW average output power at 978 nm wavelength was demonstrated. Main factors preventing the from higher power, such as epitaxy structure of wafer thermal characteristics gain chip were investigated, corresponding methods to improve performance laser, e.g., growing in a reversed sequence, removing substrate entirely using diamond heat spreader, proposed. The experimental...

Ultrashort pulse lasers are widely used in laser spectroscopy, microwave measurements, high-speed sampling, medical diagnostics, communication systems, and many other fields. This work presents a tunable self-mode-locked semiconductor disk laser, which is based on the combination of Kerr effect gain chip soft aperture formed by overlap pumping spot. A linear resonator with length 93 mm high reflectivity distributed Bragg reflector at bottom external output coupler 100 curvature radium. The...

Abstract Self-mode-locking (SML) of fundamental TEM 00 mode and high-order transverse were demonstrated in an optically pumped semiconductor disk laser these states can be switched by simply adjusting the elements laser. The repetition rate pulse train was 1 GHz, using a straight cavity. Furthermore, we measured durations found that duration SML with higher-order is shorter than at same pump power. To best our knowledge, this first experiment to obtain two single By method changing cavity...

Vertical external cavity surface-emitting lasers (VECSELs) have unique properties such as excellent beam quality, high average output power, and repetition rate. Short pulses from VECSELs, especially picosecond femtosecond, can be achieved by a passive mode-locking mechanism with semiconductor saturable absorber mirror (SESAM). We theoretically simulate the pulse evolution dynamics in VECSELs investigate influences of different parameters gain SESAM on characteristics. To best our knowledge,...

Abstract We demonstrated a repetition-rate-tunable second harmonic mode-locked optically pumped semiconductor disk laser (OP-SDL), and the tuning range was from 1.168 GHz to 1.25 GHz. The entire process continuous, OP-SDL always in working state. To best of our knowledge, this is first work obtain intracavity repetition rate tunable an OP-SDL. At same time, fundamental wave can be continuously adjusted 1.16 1.66 central wavelengths pulse trains were around 971 nm, highest signal-to-noise...

We experimentally demonstrate wavelength-tunable Self-Mode-Locking (SML) operation generated in an Optically Pumped Semiconductor Disk Laser (OP-SDL) with a straight cavity. The is achieved by insetting etalon into the cavity, and wavelength tuning range of 11 nm can be adjusting angle etalon. After aligning cavity carefully, stable self-mode-locking obtained when pump power was beyond 5 W, pulse period 0.99 ns agrees well round-trip time determined optical length 148 mm. Meanwhile, RF...

The band structure of InGaAs strained quantum wells are investigated using 8×8 Luttinger-Kohn Hamiltonian including conduction band, heavy hole, light spin-orbit splitting and strain effects. energy dispersion curves valence the material gain spectra TE TM mode given, respectively. variation peak with carrier density, temperature, well width, Indium composition calculated. calculations show that higher In thicker well, longer emitting wavelength are. density lead to gain.

Passively mode-locked optically pumped vertical external cavity surface-emitting lasers (OP-VECSELs) have unique properties, such as excellent beam quality, high-average output power and high repetition rate. Many applications, including frequency comb supercontinuum, require pulses in the femtosecond regime. A numerical model regime is essential to understand pulse formation mechanism. In this paper, we present a of passively VECSELs We analyze influence gain parameters, small-signal gain,...

Abstract Strain-compensated quantum wells (QWs) could greatly improve the performance of semiconductor disk lasers, such as improving epitaxy quality gain chip and obtaining a higher gain. To optimize output characteristics chip, strain-compensated thickness, well depth, band energy, emission wavelength, peak versus In P compositions are investigated in detail. The results show that increasing composition layer will slightly reduce deepen increase But is not better. When designing it should...